Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation

Sato, K.; Yasuda, H.; Ichikawa, S.; Imamura, M.; Takahashi, K.; Hata, S.; Matsumura, S.; Anada, S.; Lee, J. G.; Mori, H.

doi:https://doi.org/10.1016/j.actamat.2018.05.045

Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation

Sato, K.; Yasuda, H.; Ichikawa, S. et al.

Acta Materialia, 2018, 154, 284-294

アクセス数:211件（2025-04-19 19:44 集計）

固定URL: https://hdl.handle.net/11094/89385

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タイトル	Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation
著者	NRID 1000070314424 1000070314424 ORCID 0000-0001-9078-2541 0000-0001-9078-2541 researchmap permalink read0158304 read0158304 Scopus Author ID 55552977400 55552977400 著者名 Sato, K.
	NRID 1000060210259 1000060210259 著者名 Yasuda, H.
	著者名 Ichikawa, S.
	著者名 Imamura, M.
	著者名 Takahashi, K.
	著者名 Hata, S.
	著者名 Matsumura, S.
	著者名 Anada, S.
	著者名 Lee, J. G.
	NRID 1000010024366 1000010024366 著者名 Mori, H.
キーワード等	Transition-metal silicide
	Synchrotron radiation
	Transmission electron microscopy
	Electronic band structure
	Electronic excitation
抄録	The synthesis of platinum silicide at a Pt/SiOx interface by photon irradiation was investigated using transmission electron microscopy. A platinum silicide, Pt₂Si, was successfully formed at the Pt/SiOx interface by irradiation with 680 and 140 eV photons, but not by irradiation with 80 eV photons. Silicide formation was also induced by irradiation with electrons of energy 75 keV. The amount of silicide formed by photon irradiation was lower than the amount obtained by electron irradiation. Silicide formation by both photon and electron irradiation was accompanied by Si depletion in amorphous SiOx. The experimental results indicate that silicide formation is induced by electronic excitation. A possible mechanism for silicide formation is proposed on the basis of the results.
出版者	Elsevier Ltd.
収録物名	Acta Materialia
巻(号)	154
ページ	284-294
刊行年月	2018-08-01
言語	英語
ハンドルURL	https://hdl.handle.net/11094/89385
PISSN	13596454
NCID	AA1106787X
関連情報 (isVersionOf)	DOI (出版社版) https://doi.org/10.1016/j.actamat.2018.05.045
アクセス権	open access
権利情報	©2018. This manuscript version is made available under the CC-BY-NC-ND 4.0 license.
出版タイプ	Accepted Manuscript
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	Acta Materialia. 2018, 154, p. 284-294
DC.title	Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation
DC.creator	Sato, K.
	Yasuda, H.
	Ichikawa, S.
	Imamura, M.
	Takahashi, K.
	Hata, S.
	Matsumura, S.
	Anada, S.
	Lee, J. G.
	Mori, H.
DC.publisher	Elsevier Ltd.
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2018-08-01
DC.identifier	https://doi.org/10.1016/j.actamat.2018.05.045
DC.subject	Transition-metal silicide
	Synchrotron radiation
	Transmission electron microscopy
	Electronic band structure
	Electronic excitation
DCTERMS.abstract	The synthesis of platinum silicide at a Pt/SiOx interface by photon irradiation was investigated using transmission electron microscopy. A platinum silicide, Pt₂Si, was successfully formed at the Pt/SiOx interface by irradiation with 680 and 140 eV photons, but not by irradiation with 80 eV photons. Silicide formation was also induced by irradiation with electrons of energy 75 keV. The amount of silicide formed by photon irradiation was lower than the amount obtained by electron irradiation. Silicide formation by both photon and electron irradiation was accompanied by Si depletion in amorphous SiOx. The experimental results indicate that silicide formation is induced by electronic excitation. A possible mechanism for silicide formation is proposed on the basis of the results.
DC.rights	©2018. This manuscript version is made available under the CC-BY-NC-ND 4.0 license.
DC.format	89385
citation_title	Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation
citation_author	Sato, K.
	Yasuda, H.
	Ichikawa, S.
	Imamura, M.
	Takahashi, K.
	Hata, S.
	Matsumura, S.
	Anada, S.
	Lee, J. G.
	Mori, H.
citation_publisher	Elsevier Ltd.
citation_language	英語
citation_date	2018-08-01
citation_journal_title	Acta Materialia
citation_volume	154
citation_firstpage	284
citation_lastpage	294
citation_doi	https://doi.org/10.1016/j.actamat.2018.05.045
citation_public_url	https://hdl.handle.net/11094/89385

Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation

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