Determination of the actual valence band of a topological insulator Bi₂Se₃

Higuchi, Yuki; Itaya, Ryota; Saito, Harutaka; Toichi, Yuichiro; Kobayashi, Takahiro; Tomita, Mito; Terakawa, Shigemi; Suzuki, Katsuhiro; Kuroda, Kenta; Kotani, Takao; Matsui, Fumihiko; Suga, Shigemasa; Sato, Hitoshi; Sato, Kazunori; Sakamoto, Kazuyuki

doi:https://doi.org/10.1016/j.vacuum.2024.113944

Determination of the actual valence band of a topological insulator Bi₂Se₃

Higuchi, Yuki; Itaya, Ryota; Saito, Harutaka et al.

Vacuum, 2025, 233, 113944

アクセス数:1,782件（2025-07-26 12:03 集計）

固定URL: https://hdl.handle.net/11094/100390

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タイトル	Determination of the actual valence band of a topological insulator Bi₂Se₃
著者	著者名 Higuchi, Yuki
	著者名 Itaya, Ryota
	著者名 Saito, Harutaka
	著者名 Toichi, Yuichiro
	著者名 Kobayashi, Takahiro
	著者名 Tomita, Mito
	NRID 1000060996677 1000060996677 researchmap permalink sterakawa sterakawa 著者名 Terakawa, Shigemi
	著者名 Suzuki, Katsuhiro
	NRID 1000000774001 1000000774001 著者名 Kuroda, Kenta
	NRID 1000060283826 1000060283826 著者名 Kotani, Takao
	NRID 1000060324977 1000060324977 著者名 Matsui, Fumihiko
	NRID 1000040107438 1000040107438 researchmap permalink ssmsuga ssmsuga 著者名 Suga, Shigemasa
	NRID 1000090243550 1000090243550 著者名 Sato, Hitoshi
	NRID 1000060379097 1000060379097 researchmap permalink read0076412 read0076412 Scopus Author ID 57792500200 57792500200 著者名 Sato, Kazunori
	NRID 1000070261542 1000070261542 ORCID 0000-0001-9507-6435 0000-0001-9507-6435 researchmap permalink read0184558 read0184558 Scopus Author ID 7403538529 7403538529 著者名 Sakamoto, Kazuyuki
キーワード等	ARPES
	Bi2Se3
	DFT calculation
	Direct band gap semiconductor
	Quasi-particle self-consistent GW
	Topological insulator
内容	Higuchi Y., Itaya R., Saito H., et al. Determination of the actual valence band of a topological insulator Bi₂Se₃. Vacuum 233, 113944 (2025); https://doi.org/10.1016/j.vacuum.2024.113944.
抄録	A proper understanding of the electronic structure of topological insulators in terms of bulk states as well as surface spin polarized states is essential for the development of spintronic devices. In this work, we investigated the electronic structure of Bi₂Se₃, a typical n-type topological insulator. Experimentally, we measured the band dispersions along Γ̄-M̄ and the constant energy contours in the entire three-dimensional Brillouin zone, and confirmed that the valence band maximum is located at the Γ point with a binding energy 65±15 meV higher than that of the Dirac point. The theoretical calculations performed by a quasi-particle self-consistent GW method show good agreement with the experimental results on the bulk band structure. The present results indicate that Bi₂Se₃ is a suitable candidate for next-generation spintronic devices.
出版者	Elsevier Ltd
収録物名	Vacuum
巻(号)	233
ページ	113944
刊行年月	2025-03-01
言語	英語
ハンドルURL	https://hdl.handle.net/11094/100390
PISSN	0042207X
関連情報 (isIdenticalTo)	DOI (出版社版) https://doi.org/10.1016/j.vacuum.2024.113944
アクセス権	open access
権利情報	This article is licensed under a Creative Commons Attribution 4.0 International License.
出版タイプ	Version of Record
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCTERMS.bibliographicCitation	Vacuum. 2025, 233, p. 113944
DC.title	Determination of the actual valence band of a topological insulator Bi₂Se₃
DC.creator	Higuchi, Yuki
	Itaya, Ryota
	Saito, Harutaka
	Toichi, Yuichiro
	Kobayashi, Takahiro
	Tomita, Mito
	Terakawa, Shigemi
	Suzuki, Katsuhiro
	Kuroda, Kenta
	Kotani, Takao
	Matsui, Fumihiko
	Suga, Shigemasa
	Sato, Hitoshi
	Sato, Kazunori
	Sakamoto, Kazuyuki
DC.publisher	Elsevier Ltd
DC.language' scheme='DCTERMS.RFC1766	英語
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2025-03-01
DC.identifier	https://doi.org/10.1016/j.vacuum.2024.113944
DC.subject	ARPES
	Bi2Se3
	DFT calculation
	Direct band gap semiconductor
	Quasi-particle self-consistent GW
	Topological insulator
DC.description	Higuchi Y., Itaya R., Saito H., et al. Determination of the actual valence band of a topological insulator Bi₂Se₃. Vacuum 233, 113944 (2025); https://doi.org/10.1016/j.vacuum.2024.113944.
DCTERMS.abstract	A proper understanding of the electronic structure of topological insulators in terms of bulk states as well as surface spin polarized states is essential for the development of spintronic devices. In this work, we investigated the electronic structure of Bi₂Se₃, a typical n-type topological insulator. Experimentally, we measured the band dispersions along Γ̄-M̄ and the constant energy contours in the entire three-dimensional Brillouin zone, and confirmed that the valence band maximum is located at the Γ point with a binding energy 65±15 meV higher than that of the Dirac point. The theoretical calculations performed by a quasi-particle self-consistent GW method show good agreement with the experimental results on the bulk band structure. The present results indicate that Bi₂Se₃ is a suitable candidate for next-generation spintronic devices.
DC.rights	This article is licensed under a Creative Commons Attribution 4.0 International License.
DC.format	100390
citation_title	Determination of the actual valence band of a topological insulator Bi₂Se₃
citation_author	Higuchi, Yuki
	Itaya, Ryota
	Saito, Harutaka
	Toichi, Yuichiro
	Kobayashi, Takahiro
	Tomita, Mito
	Terakawa, Shigemi
	Suzuki, Katsuhiro
	Kuroda, Kenta
	Kotani, Takao
	Matsui, Fumihiko
	Suga, Shigemasa
	Sato, Hitoshi
	Sato, Kazunori
	Sakamoto, Kazuyuki
citation_publisher	Elsevier Ltd
citation_language	英語
citation_date	2025-03-01
citation_journal_title	Vacuum
citation_volume	233
citation_firstpage	113944
citation_doi	https://doi.org/10.1016/j.vacuum.2024.113944
citation_public_url	https://hdl.handle.net/11094/100390

Determination of the actual valence band of a topological insulator Bi₂Se₃

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