Current-assisted low-temperature silver sinter bonding to silicon carbide by utilizing ion migration

Matsuda, Tetsuhiro; Matsuda, Tomoki; Kambara, Makoto et al.

Materials and Design, 2025, 252, 113780

アクセス数:490件（2025-09-27 07:50 集計）

固定URL: https://hdl.handle.net/11094/100998

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タイトル
Current-assisted low-temperature silver sinter bonding to silicon carbide by utilizing ion migration
著者
著者名
Matsuda, Tetsuhiro
NRID
1000030756333 1000030756333
ORCID
0000-0002-3978-0118 0000-0002-3978-0118
researchmap permalink
tomokimatsuda tomokimatsuda
Scopus Author ID
56430312900 56430312900
著者名
Matsuda, Tomoki
NRID
1000080359661 1000080359661
researchmap permalink
pme305 pme305
著者名
Kambara, Makoto
NRID
1000070144433 1000070144433
著者名
Hirose, Akio
キーワード等
Ag sinter bonding
Current-assisted bonding
Interface
Ion migration
Silicon carbide
Transmission electron microscopy
内容
Matsuda T., Matsuda T., Kambara M., et al. Current-assisted low-temperature silver sinter bonding to silicon carbide by utilizing ion migration. Materials and Design 252, 113780 (2025); https://doi.org/10.1016/j.matdes.2025.113780.
抄録
Sinter bonding using fine metal particles has attracted significant attention as a promising technology for next-generation power devices. However, achieving high-strength joints between semiconductor materials and metal substrates remains challenging due to the low interfacial bonding ratios, leading to interfacial fractures that weaken the joint. Herein, we demonstrate a current-assisted low-temperature Ag sinter bonding process for SiC, utilizing ion migration within the bonding layer. The process significantly improved the joint strength by enhancing the interfacial bonding properties via Ag precipitation on the SiC surface. The precipitation, facilitated by the current-driven migration of Ag ions derived from the decomposition of compounds, effectively increased the density and interfacial bonding ratio of the sintered Ag layer, thereby mitigating interfacial fracture. Based on these findings, we successfully achieved current-assisted sinter bonding, notably at room temperature. Furthermore, the current-driven migration of the generated Ag ions was sufficiently induced even with a minimal amount of Ag compounds. Accordingly, the joint properties were further enhanced by suppressing localized vulnerability in the sintered Ag layer through the optimization of the Ag2O mixture ratio in the bonding paste. This current-assisted process plays a crucial role in achieving reliable low-temperature sinter bonding, essential for advanced electronics packaging.
出版者
Elsevier Ltd
収録物名
Materials and Design
巻(号)
252
ページ
113780
刊行年月
2025-04-01
言語
英語
ハンドルURL
https://hdl.handle.net/11094/100998
PISSN
02641275
eISSN
18734197
関連情報 (isIdenticalTo)
DOI (出版社版)
https://doi.org/10.1016/j.matdes.2025.113780
アクセス権
open access
権利情報
This article is licensed under a Creative Commons Attribution 4.0 International License.
出版タイプ
Version of Record
カテゴリ
学術雑誌論文 Journal Article