学術雑誌論文

学術雑誌論文

ACS Applied Energy Materials. 2025, 8(7), p. 4411-4417

Selective Anion Manipulation for Controlling the Thermoelectric Properties of Epitaxial SnO2 Films on r-Al2O3

American Chemical Society

英語

2025-03-21

https://doi.org/10.1021/acsaem.4c03344

This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Energy Materials, © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsaem.4c03344.

Introducing defects is one of the promising approaches for enhancing the thermoelectric property. In this study, we substantially reduce thermal conductivity while maintaining a high thermoelectric power factor (PF) by selectively manipulating O2- anion in domain-engineered SnO2 with conduction and valence bands mainly composed of Sn 5s and O 2p orbitals, respectively. Ion implantation can generate O defects more easily than Sn defects, resulting in a small impact on the Sn 5s conduction band and the formation of the O defect resonant level. The lattice thermal conductivity of the arsenic-implanted epitaxial SnO2 films with the manipulated O2- anions (2.6 Wm-1 K-1) is approximately half that of Sb-doped films without them (4.7 Wm-1 K-1), while the maximum PF of arsenic-implanted epitaxial SnO2 films remains relatively high owing to the high Seebeck coefficient originating from an effective mass increase. This selective O2- anion manipulation is an outstanding methodology of selectively causing thermal conductivity reduction while maintaining a high PF.

The full-text file will be made open to the public on 21 March 2026 in accordance with the publisher's policy.

101046

Selective Anion Manipulation for Controlling the Thermoelectric Properties of Epitaxial SnO2 Films on r-Al2O3

American Chemical Society

英語

2025-03-21

ACS Applied Energy Materials

8

7

4411

4417

https://doi.org/10.1021/acsaem.4c03344

https://hdl.handle.net/11094/101046