学術雑誌論文

学術雑誌論文

text

Materials Science in Semiconductor Processing. 2025, 199, p. 109809

Observation of room-temperature magnetoresistance effect in Co2Fe(Al,Si)/Ge/Co2FeSi vertical spin-valve devices on Si

Elsevier BV

英語

text

2025-07-19

https://doi.org/10.1016/j.mssp.2025.109809

Watahiki Shimon, Kusumoto Shuhei, Yamada Astuya, et al. Observation of room-temperature magnetoresistance effect in Co2Fe(Al,Si)/Ge/Co2FeSi vertical spin-valve devices on Si. Materials Science in Semiconductor Processing 199, 109809 (2025); https://doi.org/10.1016/j.mssp.2025.109809.

Using low-temperature growth techniques and an intermediate Ge layer with Sn doping, we experimentally demonstrate an epitaxial Co2Fe(Al,Si)/Ge/Co2FeSi heterostructure on a Si platform, where Co2Fe(Al,Si) and Co2FeSi are Heusler compounds that exhibit half-metallic properties. The Sn doping only at the initial growth stage of Ge effectively affects the suppression of surface segregation of Sn and the atomic interdiffusion at the Ge/Co2FeSi heterointerface. By fabricating current-perpendicular-to-the-plane spin-valve devices, we observe a magnetoresistance (MR) effect with an MR ratio of 0.11 % at room temperature, showing evidence of a nonvolatile memory effect at room temperature, even in a vertical semiconductor spintronic device structure with Co-based Heusler compounds. This study presents crucial findings for high-performance Ge-based vertical spin-valve devices on a Si platform.

This article is licensed under a Creative Commons Attribution 4.0 International License.

102338

Observation of room-temperature magnetoresistance effect in Co2Fe(Al,Si)/Ge/Co2FeSi vertical spin-valve devices on Si

Elsevier BV

英語

2025-07-19

Materials Science in Semiconductor Processing

199

109809

https://doi.org/10.1016/j.mssp.2025.109809

https://hdl.handle.net/11094/102338