Efficient Electrical Manipulation of the Magnetization Process in an Epitaxially Controlled Co₂FeSi/BaTiO₃ Multiferroic Interface

Hu, Shaojie; Yamada, Shinya; Chang, Po Chun; Lin, Wen Chin; Hamaya, Kohei; Kimura, Takashi

doi:https://doi.org/10.1103/physrevapplied.20.034029

Efficient Electrical Manipulation of the Magnetization Process in an Epitaxially Controlled Co₂FeSi/BaTiO₃ Multiferroic Interface

Hu, Shaojie; Yamada, Shinya; Chang, Po Chun et al.

Physical Review Applied, 2023, 20(3), 034029

アクセス数:52件（2025-08-28 18:25 集計）

固定URL: https://hdl.handle.net/11094/102378

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タイトル	Efficient Electrical Manipulation of the Magnetization Process in an Epitaxially Controlled Co₂FeSi/BaTiO₃ Multiferroic Interface
著者	著者名 Hu, Shaojie
	NRID 1000030725049 1000030725049 ORCID 0000-0001-6340-9151 0000-0001-6340-9151 researchmap permalink shinyayamada shinyayamada Scopus Author ID 56140528400 56140528400 著者名 Yamada, Shinya
	著者名 Chang, Po Chun
	著者名 Lin, Wen Chin
	NRID 1000090401281 1000090401281 ORCID 0000-0002-5473-6086 0000-0002-5473-6086 researchmap permalink read0102192 read0102192 Scopus Author ID 9244846800 9244846800 著者名 Hamaya, Kohei
	NRID 1000080360535 1000080360535 著者名 Kimura, Takashi
内容	Hu S., Yamada S., Chang P.C., et al. Efficient Electrical Manipulation of the Magnetization Process in an Epitaxially Controlled Co₂FeSi/BaTiO₃ Multiferroic Interface. Physical Review Applied 20, 034029 (2023); https://doi.org/10.1103/physrevapplied.20.034029.
抄録	We investigate the magnetic properties of an epitaxial full-Heusler Co₂FeSi film with an atomically controlled multiferroic interface coupled with a BaTiO₃ substrate. The real-space observation of the magnetic domain structure using a magneto-optical Kerr microscope reveals perfect domain-pattern transfer from the ferroelectric substrate, indicating strong interface magnetoelectric coupling. The unique anisotropic magnetization reversal process was found to be induced by lateral modulation of the magnetic anisotropy constant through the strain-induced magnetoelectric coupling effect. The strong interface coupling yields efficient electrical manipulation of the magnetic property with the appropriate initial ferroelectric domain pattern. Our finding indicates that the interface multiferroic structure based on an epitaxially grown Heusler thin film is a promising approach for efficient electrical manipulation of magnetization.
出版者	American Physical Society
収録物名	Physical Review Applied
巻(号)	20(3)
ページ	034029
刊行年月	2023-09-14
言語	英語
ハンドルURL	https://hdl.handle.net/11094/102378
eISSN	23317019
関連情報 (isIdenticalTo)	DOI (出版社版) https://doi.org/10.1103/physrevapplied.20.034029
アクセス権	open access
権利情報	Copyright 2023 by the American Physical Society
出版タイプ	Version of Record
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	Physical Review Applied. 2023, 20(3), p. 034029
DC.title	Efficient Electrical Manipulation of the Magnetization Process in an Epitaxially Controlled Co₂FeSi/BaTiO₃ Multiferroic Interface
DC.creator	Hu, Shaojie
	Yamada, Shinya
	Chang, Po Chun
	Lin, Wen Chin
	Hamaya, Kohei
	Kimura, Takashi
DC.publisher	American Physical Society
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2023-09-14
DC.identifier	https://doi.org/10.1103/physrevapplied.20.034029
DC.description	Hu S., Yamada S., Chang P.C., et al. Efficient Electrical Manipulation of the Magnetization Process in an Epitaxially Controlled Co₂FeSi/BaTiO₃ Multiferroic Interface. Physical Review Applied 20, 034029 (2023); https://doi.org/10.1103/physrevapplied.20.034029.
DCTERMS.abstract	We investigate the magnetic properties of an epitaxial full-Heusler Co₂FeSi film with an atomically controlled multiferroic interface coupled with a BaTiO₃ substrate. The real-space observation of the magnetic domain structure using a magneto-optical Kerr microscope reveals perfect domain-pattern transfer from the ferroelectric substrate, indicating strong interface magnetoelectric coupling. The unique anisotropic magnetization reversal process was found to be induced by lateral modulation of the magnetic anisotropy constant through the strain-induced magnetoelectric coupling effect. The strong interface coupling yields efficient electrical manipulation of the magnetic property with the appropriate initial ferroelectric domain pattern. Our finding indicates that the interface multiferroic structure based on an epitaxially grown Heusler thin film is a promising approach for efficient electrical manipulation of magnetization.
DC.rights	Copyright 2023 by the American Physical Society
DC.format	102378
citation_title	Efficient Electrical Manipulation of the Magnetization Process in an Epitaxially Controlled Co₂FeSi/BaTiO₃ Multiferroic Interface
citation_author	Hu, Shaojie
	Yamada, Shinya
	Chang, Po Chun
	Lin, Wen Chin
	Hamaya, Kohei
	Kimura, Takashi
citation_publisher	American Physical Society
citation_language	英語
citation_date	2023-09-14
citation_journal_title	Physical Review Applied
citation_volume	20
citation_issue	3
citation_firstpage	034029
citation_doi	https://doi.org/10.1103/physrevapplied.20.034029
citation_public_url	https://hdl.handle.net/11094/102378

Efficient Electrical Manipulation of the Magnetization Process in an Epitaxially Controlled Co₂FeSi/BaTiO₃ Multiferroic Interface

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