Engineered substrates for domain control in CrSe thin-film growth: Single-domain formation on lattice-matched yttria-stabilized zirconia (111) substrate

Tajima, Yusuke; Shiogai, Junichi; Ochi, Masayuki et al.

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2025, 64(6), 065502

アクセス数:28件（2025-08-14 18:56 集計）

固定URL: https://hdl.handle.net/11094/102454

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論文情報

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タイトル
Engineered substrates for domain control in CrSe thin-film growth: Single-domain formation on lattice-matched yttria-stabilized zirconia (111) substrate
著者
著者名
Tajima, Yusuke
NRID
1000030734066 1000030734066
ORCID
0000-0002-5464-9839 0000-0002-5464-9839
researchmap permalink
junichi.shiogai junichi.shiogai
Scopus Author ID
36905196700 36905196700
著者名
Shiogai, Junichi
NRID
1000010734353 1000010734353
ORCID
0000-0001-7438-4797 0000-0001-7438-4797
researchmap permalink
masaochi masaochi
Scopus Author ID
55094552700 55094552700
著者名
Ochi, Masayuki
NRID
1000040361175 1000040361175
ORCID
0000-0003-2839-6791 0000-0003-2839-6791
researchmap permalink
kazutaka_kudo kazutaka_kudo
Scopus Author ID
7402926210 7402926210
著者名
Kudo, Kazutaka
NRID
1000000443028 1000000443028
ORCID
0000-0002-3018-8548 0000-0002-3018-8548
researchmap permalink
jmatsuno jmatsuno
Scopus Author ID
55969836000 55969836000
著者名
Matsuno, Jobu
キーワード等
density functional theory
epitaxy
spintronics
thin film growth
triangular antiferromagnet
内容
This is the pre-print of version of the article: Tajima Y., Shiogai J., Ochi M., et al. Engineered substrates for domain control in CrSe thin-film growth: single-domain formation on a lattice-matched YSZ(111) substrate. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 64, 065502 (2025); https://doi.org/10.35848/1347-4065/addb1b.
抄録
Epitaxial thin-film growth is a versatile and powerful technique for achieving precise control of composition, stabilizing non-equilibrium phases, tailoring growth orientation, as well as forming heterointerfaces of various quantum materials. For the synthesis of highly crystalline thin films, an in-depth understanding of the epitaxial relationship between the desired thin film and the single-crystalline substrates is necessary. In this study, we investigate the epitaxial relationship in thin-film growth of triangular-lattice antiferromagnet CrSe on the (001) plane of Al₂O₃ and the lattice-matched (111) plane of yttria-stabilized zirconia (YSZ) substrates. Structural characterization using out-of-plane and in-plane X-ray diffraction shows that the 19.1°-twisted domains of CrSe significantly dominate the aligned domain on the Al₂O₃ substrate while it reveals a single-domain formation on the YSZ substrate. The stability of the 19.1°-twisted domain rather than the aligned domain can be explained by rotational commensurate epitaxy, which is well reproduced by density functional theory calculations. The single-domain CrSe thin film on the YSZ substrate exhibits a superior metallic conductivity compared to the twisted-domain thin film on the Al₂O₃ substrate, implying the contribution of the grain boundary scattering mechanism to electrical transport.
出版者
Institute of Physics
収録物名
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
巻(号)
64(6)
ページ
065502
刊行年月
2025-06-11
言語
英語
ハンドルURL
https://hdl.handle.net/11094/102454
PISSN
00214922
eISSN
13474065
関連情報 (isVersionOf)
DOI (出版社版)
https://doi.org/10.35848/1347-4065/addb1b
アクセス権
open access
出版タイプ
Author’s Original
カテゴリ
学術雑誌論文 Journal Article