Etching characteristics of tungsten and tungsten compounds by energetic fluorocarbon and argon ions

Kang, Hojun; Kawabata, Shunta; Ito, Tomoko; Kang, Song Yun; Lee, Dongkyu; Lee, Yuna; Karahashi, Kazuhiro; Hamaguchi, Satoshi

doi:https://doi.org/10.1116/6.0004658

Etching characteristics of tungsten and tungsten compounds by energetic fluorocarbon and argon ions

Kang, Hojun; Kawabata, Shunta; Ito, Tomoko et al.

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2025, 43(4), 043004

アクセス数:32件（2025-10-24 05:52 集計）

固定URL: https://hdl.handle.net/11094/102536

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タイトル	Etching characteristics of tungsten and tungsten compounds by energetic fluorocarbon and argon ions
著者	著者名 Kang, Hojun
	著者名 Kawabata, Shunta
	NRID 1000010724784 1000010724784 researchmap permalink plasma0326 plasma0326 著者名 Ito, Tomoko
	著者名 Kang, Song Yun
	著者名 Lee, Dongkyu
	著者名 Lee, Yuna
	NRID 1000060451118 1000060451118 ORCID 0000-0001-9951-6573 0000-0001-9951-6573 researchmap permalink karahashi karahashi Scopus Author ID 6602275601 6602275601 著者名 Karahashi, Kazuhiro
	NRID 1000060301826 1000060301826 ORCID 0000-0001-6580-8797 0000-0001-6580-8797 researchmap permalink satoshi_hamaguchi satoshi_hamaguchi Scopus Author ID 55220082400 55220082400 著者名 Hamaguchi, Satoshi
内容	Kang H., Kawabata S., Ito T., et al. Etching characteristics of tungsten and tungsten compounds by energetic fluorocarbon and argon ions. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 43, 043004 (2025); https://doi.org/10.1116/6.0004658.
抄録	Etching characteristics of tungsten (W), tungsten silicide (W3Si2), and tungsten oxide (WO3) by energetic trifluorocarbon (CF3+) and argon (Ar+) ion irradiation were examined with the use of mass-selected mono-energetic ion beams in an energy range between 500 and 4000 eV. It is found that the etching yield of W by CF3+ ion irradiation is notably higher than that by Ar+ ion irradiation when their ion energies are the same and sufficiently high, probably because of the formation of volatile tungsten fluoride (WFx) species in the case of CF3+ ion irradiation. Similarly, the etching yield of WO3 by CF3+ ion irradiation is also found to be much higher than that by Ar+ ion irradiation. In contrast, the etching yields of W3Si2 by CF3+ and Ar+ ion irradiation are found to be similar. On the other hand, the etch rates, i.e., the etched depths per unit time of W and W3Si2 by CF3+ or Ar+ ion irradiation, are found to be substantially lower than those of WO3. The results suggest that W and W3Si2 may well serve as hard mask materials for fluorocarbon-based plasma etching processes.
出版者	AVS Science and Technology Society
収録物名	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
巻(号)	43(4)
ページ	043004
刊行年月	2025-06-02
言語	英語
ハンドルURL	https://hdl.handle.net/11094/102536
PISSN	07342101
eISSN	15208559
関連情報 (isIdenticalTo)	DOI (出版社版) https://doi.org/10.1116/6.0004658
アクセス権	embargoed access
権利情報	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in https://doi.org/10.1116/6.0004658.
権利情報	The full-text file will be made open to the public on 2 June 2026 in accordance with the publisher's policy.
出版タイプ	Version of Record
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2025, 43(4), p. 043004
DC.title	Etching characteristics of tungsten and tungsten compounds by energetic fluorocarbon and argon ions
DC.creator	Kang, Hojun
	Kawabata, Shunta
	Ito, Tomoko
	Kang, Song Yun
	Lee, Dongkyu
	Lee, Yuna
	Karahashi, Kazuhiro
	Hamaguchi, Satoshi
DC.publisher	AVS Science and Technology Society
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2025-06-02
DC.identifier	https://doi.org/10.1116/6.0004658
DC.description	Kang H., Kawabata S., Ito T., et al. Etching characteristics of tungsten and tungsten compounds by energetic fluorocarbon and argon ions. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 43, 043004 (2025); https://doi.org/10.1116/6.0004658.
DCTERMS.abstract	Etching characteristics of tungsten (W), tungsten silicide (W3Si2), and tungsten oxide (WO3) by energetic trifluorocarbon (CF3+) and argon (Ar+) ion irradiation were examined with the use of mass-selected mono-energetic ion beams in an energy range between 500 and 4000 eV. It is found that the etching yield of W by CF3+ ion irradiation is notably higher than that by Ar+ ion irradiation when their ion energies are the same and sufficiently high, probably because of the formation of volatile tungsten fluoride (WFx) species in the case of CF3+ ion irradiation. Similarly, the etching yield of WO3 by CF3+ ion irradiation is also found to be much higher than that by Ar+ ion irradiation. In contrast, the etching yields of W3Si2 by CF3+ and Ar+ ion irradiation are found to be similar. On the other hand, the etch rates, i.e., the etched depths per unit time of W and W3Si2 by CF3+ or Ar+ ion irradiation, are found to be substantially lower than those of WO3. The results suggest that W and W3Si2 may well serve as hard mask materials for fluorocarbon-based plasma etching processes.
DC.rights	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in https://doi.org/10.1116/6.0004658.
DC.rights	The full-text file will be made open to the public on 2 June 2026 in accordance with the publisher's policy.
DC.format	102536
citation_title	Etching characteristics of tungsten and tungsten compounds by energetic fluorocarbon and argon ions
citation_author	Kang, Hojun
	Kawabata, Shunta
	Ito, Tomoko
	Kang, Song Yun
	Lee, Dongkyu
	Lee, Yuna
	Karahashi, Kazuhiro
	Hamaguchi, Satoshi
citation_publisher	AVS Science and Technology Society
citation_language	英語
citation_date	2025-06-02
citation_journal_title	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
citation_volume	43
citation_issue	4
citation_firstpage	043004
citation_doi	https://doi.org/10.1116/6.0004658
citation_public_url	https://hdl.handle.net/11094/102536

Etching characteristics of tungsten and tungsten compounds by energetic fluorocarbon and argon ions

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