Piezoelectric strain-mediated control of the tunnel magnetoresistance effect in magnetic tunnel junctions with a Co2FeSi/V/PMN-PT multiferroic heterostructure

Usami, T.; Kubo, Y.; Suzuki, K.; Mizukami, S.; Hamaya, K.

doi:https://doi.org/10.1063/5.0274897

Piezoelectric strain-mediated control of the tunnel magnetoresistance effect in magnetic tunnel junctions with a Co2FeSi/V/PMN-PT multiferroic heterostructure

Usami, T.; Kubo, Y.; Suzuki, K. et al.

Applied Physics Letters, 2025, 127(3), 032404

アクセス数:3件（2025-08-28 21:09 集計）

固定URL: https://hdl.handle.net/11094/102576

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タイトル	Piezoelectric strain-mediated control of the tunnel magnetoresistance effect in magnetic tunnel junctions with a Co2FeSi/V/PMN-PT multiferroic heterostructure
著者	NRID 1000030880273 1000030880273 ORCID 0000-0001-9478-7331 0000-0001-9478-7331 researchmap permalink TakamasaUsami TakamasaUsami Scopus Author ID 57189692364 57189692364 著者名 Usami, T.
	著者名 Kubo, Y.
	著者名 Suzuki, K.
	NRID 1000000339269 1000000339269 著者名 Mizukami, S.
	NRID 1000090401281 1000090401281 ORCID 0000-0002-5473-6086 0000-0002-5473-6086 researchmap permalink read0102192 read0102192 Scopus Author ID 9244846800 9244846800 著者名 Hamaya, K.
内容	Usami T., Kubo Y., Suzuki K., et al. Piezoelectric strain-mediated control of the tunnel magnetoresistance effect in magnetic tunnel junctions with a Co2FeSi/V/PMN-PT multiferroic heterostructure. Applied Physics Letters 127, 032404 (2025); https://doi.org/10.1063/5.0274897.
抄録	Electric field (E) control of the tunnel magnetoresistance (TMR) effect is a key technology for reducing power consumption during data writing in spintronic memory devices. In this Letter, we explore E control of the TMR effect in magnetic tunnel junction devices with a Co2FeSi/V/PMN-PT multiferroic heterostructure. By controlling the polarity of the applied E to the multiferroic heterostructure, a repeatable and nonvolatile change in the TMR effect is achieved. The change in the TMR effect is strongly influenced by the microscopic domain structures in the Co2FeSi layer after the application of a certain E. To obtain optimal changes, it is important to consider the control of the microscopic domain structure governed by the magnetoelectric effect in the multiferroic heterostructure.
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	127(3)
ページ	032404
刊行年月	2025-07-21
言語	英語
ハンドルURL	https://hdl.handle.net/11094/102576
PISSN	00036951
関連情報 (isVersionOf)	DOI (出版社版) https://doi.org/10.1063/5.0274897
アクセス権	open access
権利情報	The following article has been accepted by Applied Physics Letters. After it is published, it will be found at Link.
出版タイプ	Accepted Manuscript
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	Applied Physics Letters. 2025, 127(3), p. 032404
DC.title	Piezoelectric strain-mediated control of the tunnel magnetoresistance effect in magnetic tunnel junctions with a Co2FeSi/V/PMN-PT multiferroic heterostructure
DC.creator	Usami, T.
	Kubo, Y.
	Suzuki, K.
	Mizukami, S.
	Hamaya, K.
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2025-07-21
DC.identifier	https://doi.org/10.1063/5.0274897
DC.description	Usami T., Kubo Y., Suzuki K., et al. Piezoelectric strain-mediated control of the tunnel magnetoresistance effect in magnetic tunnel junctions with a Co2FeSi/V/PMN-PT multiferroic heterostructure. Applied Physics Letters 127, 032404 (2025); https://doi.org/10.1063/5.0274897.
DCTERMS.abstract	Electric field (E) control of the tunnel magnetoresistance (TMR) effect is a key technology for reducing power consumption during data writing in spintronic memory devices. In this Letter, we explore E control of the TMR effect in magnetic tunnel junction devices with a Co2FeSi/V/PMN-PT multiferroic heterostructure. By controlling the polarity of the applied E to the multiferroic heterostructure, a repeatable and nonvolatile change in the TMR effect is achieved. The change in the TMR effect is strongly influenced by the microscopic domain structures in the Co2FeSi layer after the application of a certain E. To obtain optimal changes, it is important to consider the control of the microscopic domain structure governed by the magnetoelectric effect in the multiferroic heterostructure.
DC.rights	The following article has been accepted by Applied Physics Letters. After it is published, it will be found at Link.
DC.format	102576
citation_title	Piezoelectric strain-mediated control of the tunnel magnetoresistance effect in magnetic tunnel junctions with a Co2FeSi/V/PMN-PT multiferroic heterostructure
citation_author	Usami, T.
	Kubo, Y.
	Suzuki, K.
	Mizukami, S.
	Hamaya, K.
citation_publisher	American Institute of Physics
citation_language	英語
citation_date	2025-07-21
citation_journal_title	Applied Physics Letters
citation_volume	127
citation_issue	3
citation_firstpage	032404
citation_doi	https://doi.org/10.1063/5.0274897
citation_public_url	https://hdl.handle.net/11094/102576

Piezoelectric strain-mediated control of the tunnel magnetoresistance effect in magnetic tunnel junctions with a Co2FeSi/V/PMN-PT multiferroic heterostructure

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