Perpendicularly magnetized Mn60Ga40 films on Ge(001) grown at low temperature

Nishioka, M.; Kakutani, T.; Kiire, T.; Usami, T.; Yamada, S.; Hamaya, K.

doi:https://doi.org/10.1016/j.jmmm.2025.173338

Perpendicularly magnetized Mn60Ga40 films on Ge(001) grown at low temperature

Nishioka, M.; Kakutani, T.; Kiire, T. et al.

Journal of Magnetism and Magnetic Materials, 2025, 630, 173338

アクセス数:17件（2025-10-26 02:40 集計）

固定URL: https://hdl.handle.net/11094/102775

閲覧可能ファイル

ファイル	フォーマット	利用条件	サイズ	閲覧回数	利用開始日	説明	information
JMagnMagnMater_630	pdf	なし	1.64 MB	10	2025.09.26

Creative Commons : 表示

論文情報

ファイル出力 EndNote Basic出力 Mendeley出力

タイトル	Perpendicularly magnetized Mn60Ga40 films on Ge(001) grown at low temperature
著者	著者名 Nishioka, M.
	著者名 Kakutani, T.
	著者名 Kiire, T.
	NRID 1000030880273 1000030880273 ORCID 0000-0001-9478-7331 0000-0001-9478-7331 researchmap permalink TakamasaUsami TakamasaUsami Scopus Author ID 57189692364 57189692364 著者名 Usami, T.
	NRID 1000030725049 1000030725049 ORCID 0000-0001-6340-9151 0000-0001-6340-9151 researchmap permalink shinyayamada shinyayamada Scopus Author ID 56140528400 56140528400 著者名 Yamada, S.
	NRID 1000090401281 1000090401281 ORCID 0000-0002-5473-6086 0000-0002-5473-6086 researchmap permalink read0102192 read0102192 Scopus Author ID 9244846800 9244846800 著者名 Hamaya, K.
キーワード等	Crystal growth
	L10-Mn60Ga40
	Semiconductor
	Spintronic device
内容	Nishioka M., Kakutani T., Kiire T., et al. Perpendicularly magnetized Mn60Ga40 films on Ge(001) grown at low temperature. Journal of Magnetism and Magnetic Materials 630, 173338 (2025); https://doi.org/10.1016/j.jmmm.2025.173338.
抄録	Perpendicularly magnetized materials hold significant potential for high density integration of nonvolatile spintronic memories and semiconductor spintronic devices. Here we show a perpendicularly magnetized Mn60Ga40 film grown on a semiconductor Ge at 100°C. Using a low-temperature molecular beam epitaxy technique, we finely control the composition of thin CoxFe100−x buffer layers for the growth of L10-Mn60Ga40. We find that an L10-Mn60Ga40 film with a Co67Fe33/Fe bilayer buffer structure shows perpendicular magnetic properties even on Ge. This study paves the way for perpendicular magnetic tunnel junctions with a low resistance-area product or semiconductor spintronic devices with perpendicularly magnetized spin injector/detector electrodes.
出版者	Elsevier B.V.
収録物名	Journal of Magnetism and Magnetic Materials
巻(号)	630
ページ	173338
刊行年月	2025-10-15
言語	英語
ハンドルURL	https://hdl.handle.net/11094/102775
PISSN	03048853
関連情報 (isIdenticalTo)	DOI (出版社版) https://doi.org/10.1016/j.jmmm.2025.173338
アクセス権	open access
権利情報	This article is licensed under a Creative Commons Attribution 4.0 International License.
権利情報	© 2025 The Authors
出版タイプ	Version of Record
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	Journal of Magnetism and Magnetic Materials. 2025, 630, p. 173338
DC.title	Perpendicularly magnetized Mn60Ga40 films on Ge(001) grown at low temperature
DC.creator	Nishioka, M.
	Kakutani, T.
	Kiire, T.
	Usami, T.
	Yamada, S.
	Hamaya, K.
DC.publisher	Elsevier B.V.
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2025-10-15
DC.identifier	https://doi.org/10.1016/j.jmmm.2025.173338
DC.subject	Crystal growth
	L10-Mn60Ga40
	Semiconductor
	Spintronic device
DC.description	Nishioka M., Kakutani T., Kiire T., et al. Perpendicularly magnetized Mn60Ga40 films on Ge(001) grown at low temperature. Journal of Magnetism and Magnetic Materials 630, 173338 (2025); https://doi.org/10.1016/j.jmmm.2025.173338.
DCTERMS.abstract	Perpendicularly magnetized materials hold significant potential for high density integration of nonvolatile spintronic memories and semiconductor spintronic devices. Here we show a perpendicularly magnetized Mn60Ga40 film grown on a semiconductor Ge at 100°C. Using a low-temperature molecular beam epitaxy technique, we finely control the composition of thin CoxFe100−x buffer layers for the growth of L10-Mn60Ga40. We find that an L10-Mn60Ga40 film with a Co67Fe33/Fe bilayer buffer structure shows perpendicular magnetic properties even on Ge. This study paves the way for perpendicular magnetic tunnel junctions with a low resistance-area product or semiconductor spintronic devices with perpendicularly magnetized spin injector/detector electrodes.
DC.rights	This article is licensed under a Creative Commons Attribution 4.0 International License.
DC.rights	© 2025 The Authors
DC.format	102775
citation_title	Perpendicularly magnetized Mn60Ga40 films on Ge(001) grown at low temperature
citation_author	Nishioka, M.
	Kakutani, T.
	Kiire, T.
	Usami, T.
	Yamada, S.
	Hamaya, K.
citation_publisher	Elsevier B.V.
citation_language	英語
citation_date	2025-10-15
citation_journal_title	Journal of Magnetism and Magnetic Materials
citation_volume	630
citation_firstpage	173338
citation_doi	https://doi.org/10.1016/j.jmmm.2025.173338
citation_public_url	https://hdl.handle.net/11094/102775

Perpendicularly magnetized Mn60Ga40 films on Ge(001) grown at low temperature

閲覧可能ファイル

論文情報

論文詳細を表示