Stoichiometry control and epitaxial growth of AgCrSe₂ thin films by pulsed-laser deposition

Tajima, Yusuke; Inamura, Kenshin; Masaki, Sebun; Yamazaki, Takumi; Seki, Takeshi; Kudo, Kazutaka; Matsuno, Jobu; Shiogai, Junichi

doi:https://doi.org/10.1063/5.0273060

Stoichiometry control and epitaxial growth of AgCrSe₂ thin films by pulsed-laser deposition

Tajima, Yusuke; Inamura, Kenshin; Masaki, Sebun et al.

APL Materials, 2025, 13(6), 061117

アクセス数:7件（2025-11-25 15:44 集計）

固定URL: https://hdl.handle.net/11094/102925

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タイトル	Stoichiometry control and epitaxial growth of AgCrSe₂ thin films by pulsed-laser deposition
著者	著者名 Tajima, Yusuke
	著者名 Inamura, Kenshin
	著者名 Masaki, Sebun
	NRID 1000020912091 1000020912091 著者名 Yamazaki, Takumi
	NRID 1000040579611 1000040579611 著者名 Seki, Takeshi
	NRID 1000040361175 1000040361175 ORCID 0000-0003-2839-6791 0000-0003-2839-6791 researchmap permalink kazutaka_kudo kazutaka_kudo Scopus Author ID 7402926210 7402926210 著者名 Kudo, Kazutaka
	NRID 1000000443028 1000000443028 ORCID 0000-0002-3018-8548 0000-0002-3018-8548 researchmap permalink jmatsuno jmatsuno Scopus Author ID 55969836000 55969836000 著者名 Matsuno, Jobu
	NRID 1000030734066 1000030734066 ORCID 0000-0002-5464-9839 0000-0002-5464-9839 researchmap permalink junichi.shiogai junichi.shiogai Scopus Author ID 36905196700 36905196700 著者名 Shiogai, Junichi
内容	Tajima Y., Inamura K., Masaki S., et al. Stoichiometry control and epitaxial growth of AgCrSe₂ thin films by pulsed-laser deposition. APL Materials 13, 061117 (2025); https://doi.org/10.1063/5.0273060.
抄録	We report on epitaxial growth in thin-film synthesis of a polar magnetic semiconductor, AgCrSe₂, on a lattice-matched yttria-stabilized zirconia (111) substrate by pulsed-layer deposition (PLD). By using an Ag-rich PLD target to compensate for Ag deficiency in thin films, the nucleation of impurity phases is suppressed, resulting in the c-axis-oriented and single-phase AgCrSe₂ thin film. Structural analysis using x-ray diffraction and cross-sectional scanning transmission electron microscopy reveals epitaxial growth with the presence of both twisted and polar domains. Optical absorbance spectrum and magnetization measurements show an absorption edge at around 0.84 eV and a magnetic transition temperature at 41 K, respectively. These values are consistent with the reported values of direct bandgap and Néel temperature of bulk AgCrSe₂, reflecting a single-phase and stoichiometric feature of the obtained film. Our demonstration of epitaxial thin-film growth of AgCrSe₂ serves as a bedrock for exploration of its potential thermoelectric and spintronic functionalities at surfaces or heterointerfaces.
出版者	American Institute of Physics
収録物名	APL Materials
巻(号)	13(6)
ページ	061117
刊行年月	2025-06-11
言語	英語
ハンドルURL	https://hdl.handle.net/11094/102925
eISSN	2166532X
関連情報 (isIdenticalTo)	DOI (出版社版) https://doi.org/10.1063/5.0273060
アクセス権	open access
権利情報	Copyright (2025) Author(s). This article is distributed under a Creative Commons Attribution (CC BY-NC) License.
出版タイプ	Version of Record
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	APL Materials. 2025, 13(6), p. 061117
DC.title	Stoichiometry control and epitaxial growth of AgCrSe₂ thin films by pulsed-laser deposition
DC.creator	Tajima, Yusuke
	Inamura, Kenshin
	Masaki, Sebun
	Yamazaki, Takumi
	Seki, Takeshi
	Kudo, Kazutaka
	Matsuno, Jobu
	Shiogai, Junichi
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2025-06-11
DC.identifier	https://doi.org/10.1063/5.0273060
DC.description	Tajima Y., Inamura K., Masaki S., et al. Stoichiometry control and epitaxial growth of AgCrSe₂ thin films by pulsed-laser deposition. APL Materials 13, 061117 (2025); https://doi.org/10.1063/5.0273060.
DCTERMS.abstract	We report on epitaxial growth in thin-film synthesis of a polar magnetic semiconductor, AgCrSe₂, on a lattice-matched yttria-stabilized zirconia (111) substrate by pulsed-layer deposition (PLD). By using an Ag-rich PLD target to compensate for Ag deficiency in thin films, the nucleation of impurity phases is suppressed, resulting in the c-axis-oriented and single-phase AgCrSe₂ thin film. Structural analysis using x-ray diffraction and cross-sectional scanning transmission electron microscopy reveals epitaxial growth with the presence of both twisted and polar domains. Optical absorbance spectrum and magnetization measurements show an absorption edge at around 0.84 eV and a magnetic transition temperature at 41 K, respectively. These values are consistent with the reported values of direct bandgap and Néel temperature of bulk AgCrSe₂, reflecting a single-phase and stoichiometric feature of the obtained film. Our demonstration of epitaxial thin-film growth of AgCrSe₂ serves as a bedrock for exploration of its potential thermoelectric and spintronic functionalities at surfaces or heterointerfaces.
DC.rights	Copyright (2025) Author(s). This article is distributed under a Creative Commons Attribution (CC BY-NC) License.
DC.format	102925
citation_title	Stoichiometry control and epitaxial growth of AgCrSe₂ thin films by pulsed-laser deposition
citation_author	Tajima, Yusuke
	Inamura, Kenshin
	Masaki, Sebun
	Yamazaki, Takumi
	Seki, Takeshi
	Kudo, Kazutaka
	Matsuno, Jobu
	Shiogai, Junichi
citation_publisher	American Institute of Physics
citation_language	英語
citation_date	2025-06-11
citation_journal_title	APL Materials
citation_volume	13
citation_issue	6
citation_firstpage	061117
citation_doi	https://doi.org/10.1063/5.0273060
citation_public_url	https://hdl.handle.net/11094/102925

Stoichiometry control and epitaxial growth of AgCrSe₂ thin films by pulsed-laser deposition

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