The Impact of Sintered Ag-Al Interconnects on the Power Cycling Reliability of Die Attachments

Huo, Fupeng; Chen, Chuantong; Zhang, Zheng et al.

IEEE Transactions on Power Electronics, 2025

アクセス数:211件（2026-02-14 03:03 集計）

固定URL: https://hdl.handle.net/11094/103261

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タイトル
The Impact of Sintered Ag-Al Interconnects on the Power Cycling Reliability of Die Attachments
著者
著者名
Huo, Fupeng
NRID
1000050791703 1000050791703
ORCID
0000-0002-2365-4387 0000-0002-2365-4387
researchmap permalink
chenchuantong chenchuantong
Scopus Author ID
57189686286 57189686286
著者名
Chen, Chuantong
著者名
Zhang, Zheng
ORCID
0000-0002-3674-4701 0000-0002-3674-4701
researchmap permalink
s_lee s_lee
Scopus Author ID
56104517200 56104517200
著者名
Lee, Sangmin
著者名
Kim, Dongjin
researchmap permalink
10986178zhyich 10986178zhyich
Scopus Author ID
58961111900 58961111900
著者名
Zhang, Yicheng
著者名
Suetake, Aiji
著者名
Kazutaka, Takeshita
著者名
Yamaguchi, Yoshiji
著者名
Momose, Yashima
NRID
1000010154444 1000010154444
researchmap permalink
ksuganuma ksuganuma
著者名
Suganuma, Katsuaki
キーワード等
DBA substrate
power cycling reliability
Power module
real-time thermal monitor
sintered AgAl composite paste
内容
Huo F., Chen C., Zhang Z., et al. The Impact of Sintered Ag-Al Interconnects on the Power Cycling Reliability of Die Attachments. IEEE Transactions on Power Electronics (2025); https://doi.org/10.1109/TPEL.2025.3599973.
抄録
In this study, the degradation behavior of mimicked power modules with silicon carbide (SiC)/sintered silver (Ag)/direct bonded aluminum (DBA) structure was investigated during power cycling under a junction temperature of 200°C. To mitigate this degradation, a sintered Ag composite paste doped with micron-sized Al particles (sintered AgAl) was specifically developed for DBA substrates, leading to the proposed SiC/sintered AgAl/DBA structure. Power cycling results demonstrated that the degradation was effectively suppressed, attributed to the reduced coefficient of thermal expansion (CTE) mismatch between sintered layer and DBA substrate, as well as robust bonding among sintered Ag, DBA substrate, and Al particles. The SiC/sintered Ag/DBA mimicked power module failed after 9200 cycles. Compared to the initial values, transient thermal resistance and junction temperature increased by 39.9% and 123.0%, respectively. In contrast, for the SiC/sintered Ag15Al/DBA structure, the crack density is reduced and the crack spacing increased from 71.6 to 154.1μm. CTE mismatch was also reduced from 12.4 × 10⁻⁶/K to 1.8 × 10⁻⁶/K at 200°C. the newly developed SiC/sintered Ag15Al/DBA structure exhibited only a 0.5% and 7.6% increase in transient thermal resistance and junction temperature, respectively, after 10000 cycles. The results are significantly lower than that of SiC/sintered Ag/DBA structure.
出版者
Institute of Electrical and Electronics Engineers Inc.
収録物名
IEEE Transactions on Power Electronics
刊行年月
2025-08-19
言語
英語
ハンドルURL
https://hdl.handle.net/11094/103261
PISSN
08858993
eISSN
19410107
関連情報 (isIdenticalTo)
DOI (出版社版)
https://doi.org/10.1109/TPEL.2025.3599973
アクセス権
open access
権利情報
This article is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
© 2025 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
出版タイプ
Version of Record
カテゴリ
学術雑誌論文 Journal Article