Voltage control of interfacial antiferromagnetic spins based on magnetoelectric effect

Shiratsuchi, Yu; Toyoki, Kentaro

doi:https://doi.org/10.1109/TMRC66824.2025.11192707

Voltage control of interfacial antiferromagnetic spins based on magnetoelectric effect

Shiratsuchi, Yu; Toyoki, Kentaro

Digests of the 36th Magnetic Recording Conference, TMRC 2025, 2025

アクセス数:133件（2026-02-16 00:54 集計）

固定URL: https://hdl.handle.net/11094/103338

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タイトル	Voltage control of interfacial antiferromagnetic spins based on magnetoelectric effect
著者	NRID 1000070379121 1000070379121 ORCID 0000-0002-8938-4869 0000-0002-8938-4869 researchmap permalink read0090304 read0090304 Scopus Author ID 6602197167 6602197167 著者名 Shiratsuchi, Yu
著者	NRID 1000090780007 1000090780007 ORCID 0000-0003-2887-0326 0000-0003-2887-0326 researchmap permalink k_toyoki k_toyoki Scopus Author ID 55970429100 55970429100 著者名 Toyoki, Kentaro
キーワード等	Antiferromagnetic materials
	Hall effect
	Magnetoelectric (ME) effect
内容	Shiratsuchi Y., Toyoki K.. Voltage control of interfacial antiferromagnetic spins based on magnetoelectric effect. Digests of the 36th Magnetic Recording Conference, TMRC 2025 , (2025); https://doi.org/10.1109/TMRC66824.2025.11192707.
抄録	Efficient manipulation of antiferromagnetic (AFM) state is desirable for advanced spintronic devices with fast operation and robustness against the magnetic field perturbation. Using the magnetoelectric Cr2O3 epitaxial film, we demonstrate the giant voltage modulation of the antiferromagnetic spin reversal. We obtained the significant modulation efficiency of the switching field, μ0HSW/V (μ0HSW/E), -500 mT/V (-4.80 T·nm/V) in maximum. We also found that the stable spin direction was determined depending on the sign of the electric and magnetic field product, yielding the checkerboard-like assignment of the spin state in the E-H plane. Our findings not only advance the voltage-based insulating AFM spintronics but also provide the basis of the device function such as a deterministic logic operation by means of the field combination.
会議情報	会議名 The Magnetic Recording Conference 回次 36 主催機関 IEEE Magnetics Society 開催期間 28th-30th July, 2025 開催会場 Tohoku University 開催地 Sendai 開催国日本
出版者	Institute of Electrical and Electronics Engineers Inc.
収録物名	Digests of the 36th Magnetic Recording Conference, TMRC 2025
刊行年月	2025-10-14
言語	英語
ハンドルURL	https://hdl.handle.net/11094/103338
関連情報 (isVersionOf)	DOI (出版社版) https://doi.org/10.1109/TMRC66824.2025.11192707
アクセス権	open access
権利情報	© 2025 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
出版タイプ	Accepted Manuscript
カテゴリ	会議発表論文 Conference Paper

資源タイプ	会議発表論文
ローカル資源タイプ	会議発表論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	Digests of the 36th Magnetic Recording Conference, TMRC 2025. 2025
DC.title	Voltage control of interfacial antiferromagnetic spins based on magnetoelectric effect
DC.creator	Shiratsuchi, Yu
DC.creator	Toyoki, Kentaro
DC.publisher	Institute of Electrical and Electronics Engineers Inc.
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2025-10-14
DC.identifier	https://doi.org/10.1109/TMRC66824.2025.11192707
DC.subject	Antiferromagnetic materials
	Hall effect
	Magnetoelectric (ME) effect
DC.description	Shiratsuchi Y., Toyoki K.. Voltage control of interfacial antiferromagnetic spins based on magnetoelectric effect. Digests of the 36th Magnetic Recording Conference, TMRC 2025 , (2025); https://doi.org/10.1109/TMRC66824.2025.11192707.
DCTERMS.abstract	Efficient manipulation of antiferromagnetic (AFM) state is desirable for advanced spintronic devices with fast operation and robustness against the magnetic field perturbation. Using the magnetoelectric Cr2O3 epitaxial film, we demonstrate the giant voltage modulation of the antiferromagnetic spin reversal. We obtained the significant modulation efficiency of the switching field, μ0HSW/V (μ0HSW/E), -500 mT/V (-4.80 T·nm/V) in maximum. We also found that the stable spin direction was determined depending on the sign of the electric and magnetic field product, yielding the checkerboard-like assignment of the spin state in the E-H plane. Our findings not only advance the voltage-based insulating AFM spintronics but also provide the basis of the device function such as a deterministic logic operation by means of the field combination.
DC.rights	© 2025 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
DC.format	103338
citation_title	Voltage control of interfacial antiferromagnetic spins based on magnetoelectric effect
citation_author	Shiratsuchi, Yu
citation_author	Toyoki, Kentaro
citation_publisher	Institute of Electrical and Electronics Engineers Inc.
citation_language	英語
citation_date	2025-10-14
citation_journal_title	Digests of the 36th Magnetic Recording Conference, TMRC 2025
citation_doi	https://doi.org/10.1109/TMRC66824.2025.11192707
citation_public_url	https://hdl.handle.net/11094/103338

Voltage control of interfacial antiferromagnetic spins based on magnetoelectric effect

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