Fabrication of antiferromagnetic Cr2O3 epitaxial film on ferroelectric LiNbO3

Nakamura, Yoshinobu; Sameshima, Hiroki; Toyoki, Kentaro et al.

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2025, 64(8), 083002

アクセス数:202件（2026-02-16 12:11 集計）

固定URL: https://hdl.handle.net/11094/103339

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論文情報

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タイトル
Fabrication of antiferromagnetic Cr2O3 epitaxial film on ferroelectric LiNbO3
著者
著者名
Nakamura, Yoshinobu
著者名
Sameshima, Hiroki
NRID
1000090780007 1000090780007
ORCID
0000-0003-2887-0326 0000-0003-2887-0326
researchmap permalink
k_toyoki k_toyoki
Scopus Author ID
55970429100 55970429100
著者名
Toyoki, Kentaro
NRID
1000060314374 1000060314374
researchmap permalink
read0068619 read0068619
著者名
Nakatani, Ryoichi
NRID
1000070379121 1000070379121
ORCID
0000-0002-8938-4869 0000-0002-8938-4869
researchmap permalink
read0090304 read0090304
Scopus Author ID
6602197167 6602197167
著者名
Shiratsuchi, Yu
キーワード等
epitaxial film
magnetoelectric
spintronics
内容
This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics, Part 1. IOP Publishing Ltd are not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/adf383.
抄録
We investigated a suitable growth condition of an antiferromagnetic Cr2O3(0001) thin film on the ferroelectric LiNbO3 substrate. Crystallinity of Cr2O3, quantified using X-ray diffraction, improves with increasing growth temperature. Accompanying improved crystallinity, the Néel temperature, detected by the anomalous Hall effect, increased. Meanwhile, the high temperature growth degrades LiNbO3. To solve this competition, we investigated the post-annealing effect. For all the films studied, the X-ray diffraction intensity increased in maintaining the epitaxial relationship. In contrast, the Néel temperature did not follow this simple trend. The initially amorphous film showed no appreciable anomalous Hall effect even after crystallization, whereas in other films, the Néel temperature increased by post-annealing. The results suggest that the formation of epitaxial crystallites at a low growth temperature and the subsequent growth by post-annealing are suitable to prepare well-ordered Cr2O3 on LiNbO3
出版者
Institute of Physics
収録物名
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
巻(号)
64(8)
ページ
083002
刊行年月
2025-08-01
言語
英語
ハンドルURL
https://hdl.handle.net/11094/103339
PISSN
00214922
eISSN
13474065
関連情報 (isVersionOf)
DOI (出版社版)
https://doi.org/10.35848/1347-4065/adf383
アクセス権
embargoed access
権利情報
This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to
The full-text file will be made open to the public on 1 August 2026 in accordance with the publisher's policy.
出版タイプ
Accepted Manuscript
カテゴリ
学術雑誌論文 Journal Article