Deep-level-transient-spectroscopy study on electron traps near GaN surface generated by sputter deposition of SiO₂

Hara, Masahiro; Takaoka, Masanari; Chen, Qiang; Nozaki, Mikito; Kobayashi, Takuma; Watanabe, Heiji

doi:https://doi.org/10.35848/1347-4065/ae5b0c

Deep-level-transient-spectroscopy study on electron traps near GaN surface generated by sputter deposition of SiO₂

Hara, Masahiro; Takaoka, Masanari; Chen, Qiang et al.

Japanese Journal of Applied Physics, 2026, 65(7), 070905

アクセス数:589件（2026-10-24 20:10 集計）

固定URL: https://hdl.handle.net/11094/104507

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タイトル	Deep-level-transient-spectroscopy study on electron traps near GaN surface generated by sputter deposition of SiO₂
著者	NRID 1000031004418 1000031004418 ORCID 0000-0001-9748-8011 0000-0001-9748-8011 researchmap permalink masahirohara masahirohara Scopus Author ID 7403348802 7403348802 著者名 Hara, Masahiro
	著者名 Takaoka, Masanari
	著者名 Chen, Qiang
	NRID 1000090646217 1000090646217 ORCID 0009-0008-2368-1036 0009-0008-2368-1036 researchmap permalink n0z n0z 著者名 Nozaki, Mikito
	NRID 1000020827711 1000020827711 ORCID 0000-0002-2755-5079 0000-0002-2755-5079 researchmap permalink takumakobayashi takumakobayashi Scopus Author ID 57203742549 57203742549 著者名 Kobayashi, Takuma
	NRID 1000090379115 1000090379115 ORCID 0000-0002-7916-3093 0000-0002-7916-3093 researchmap permalink heijiw heijiw Scopus Author ID 7410305922 7410305922 著者名 Watanabe, Heiji
内容	This is the Accepted Manuscript version of an article accepted for publication in Applied Physics. IOP Publishing Ltd are not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/ae5b0c.
抄録	Electron traps in GaN generated by sputter deposition of SiO₂ films were investigated on the basis of deep level transient spectroscopy (DLTS) measurements with Schottky structures. Two major DLTS peaks emerged in the temperature range of 450–520 K, whose intensity strongly depended on the radio frequency power for sputter deposition. DLTS measurements with varying filling pulse voltages revealed that the SiO₂ deposition-induced defects were mainly located near the surface of GaN (within about 200 nm). The defects were thermally unstable, reduced by low-temperature annealing (<300 °C). Photoluminescence measurement indicated that the defects acted as non-radiative and/or infrared-emitting centers.
出版者	IOP Publishing
収録物名	Japanese Journal of Applied Physics
巻(号)	65(7)
ページ	070905
刊行年月	2026-04-16
言語	英語
ハンドルURL	https://hdl.handle.net/11094/104507
PISSN	00214922
eISSN	13474065
関連情報 (isVersionOf)	DOI (出版社版) https://doi.org/10.35848/1347-4065/ae5b0c
アクセス権	embargoed access
権利情報	This article is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
権利情報	The full-text file will be made open to the public on 16 April 2027 in accordance with the publisher's policy.
出版タイプ	Accepted Manuscript
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	Japanese Journal of Applied Physics. 2026, 65(7), p. 070905
DC.title	Deep-level-transient-spectroscopy study on electron traps near GaN surface generated by sputter deposition of SiO₂
DC.creator	Hara, Masahiro
	Takaoka, Masanari
	Chen, Qiang
	Nozaki, Mikito
	Kobayashi, Takuma
	Watanabe, Heiji
DC.publisher	IOP Publishing
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2026-04-16
DC.identifier	https://doi.org/10.35848/1347-4065/ae5b0c
DC.description	This is the Accepted Manuscript version of an article accepted for publication in Applied Physics. IOP Publishing Ltd are not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/ae5b0c.
DCTERMS.abstract	Electron traps in GaN generated by sputter deposition of SiO₂ films were investigated on the basis of deep level transient spectroscopy (DLTS) measurements with Schottky structures. Two major DLTS peaks emerged in the temperature range of 450–520 K, whose intensity strongly depended on the radio frequency power for sputter deposition. DLTS measurements with varying filling pulse voltages revealed that the SiO₂ deposition-induced defects were mainly located near the surface of GaN (within about 200 nm). The defects were thermally unstable, reduced by low-temperature annealing (<300 °C). Photoluminescence measurement indicated that the defects acted as non-radiative and/or infrared-emitting centers.
DC.rights	This article is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
DC.rights	The full-text file will be made open to the public on 16 April 2027 in accordance with the publisher's policy.
DC.format	104507
citation_title	Deep-level-transient-spectroscopy study on electron traps near GaN surface generated by sputter deposition of SiO₂
citation_author	Hara, Masahiro
	Takaoka, Masanari
	Chen, Qiang
	Nozaki, Mikito
	Kobayashi, Takuma
	Watanabe, Heiji
citation_publisher	IOP Publishing
citation_language	英語
citation_date	2026-04-16
citation_journal_title	Japanese Journal of Applied Physics
citation_volume	65
citation_issue	7
citation_firstpage	070905
citation_doi	https://doi.org/10.35848/1347-4065/ae5b0c
citation_public_url	https://hdl.handle.net/11094/104507

Deep-level-transient-spectroscopy study on electron traps near GaN surface generated by sputter deposition of SiO₂

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