Wafer-scale mapping of carrier density and mobility with terahertz time-domain ellipsometry

Agulto, Verdad C.; Iwamoto, Toshiyuki; Zhao, Zixi; Liu, Shuang; Kato, Kosaku; Nakajima, Makoto

doi:https://doi.org/10.1364/OL.546091

Wafer-scale mapping of carrier density and mobility with terahertz time-domain ellipsometry

Agulto, Verdad C.; Iwamoto, Toshiyuki; Zhao, Zixi et al.

Optics Letters, 2025, 50(3), 948-951

アクセス数:19件（2026-09-20 05:41 集計）

固定URL: https://hdl.handle.net/11094/106458

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タイトル	Wafer-scale mapping of carrier density and mobility with terahertz time-domain ellipsometry
著者	ORCID 0000-0002-5408-5148 0000-0002-5408-5148 researchmap permalink verdadagulto verdadagulto Scopus Author ID 57194092779 57194092779 著者名 Agulto, Verdad C.
	著者名 Iwamoto, Toshiyuki
	著者名 Zhao, Zixi
	著者名 Liu, Shuang
	NRID 1000040751087 1000040751087 ORCID 0000-0002-9977-7439 0000-0002-9977-7439 researchmap permalink kosakukato kosakukato Scopus Author ID 57189303489 57189303489 著者名 Kato, Kosaku
	NRID 1000040361662 1000040361662 ORCID 0000-0002-0351-2197 0000-0002-0351-2197 researchmap permalink nakajimamakoto nakajimamakoto Scopus Author ID 55236697600 55236697600 著者名 Nakajima, Makoto
内容	Agulto V.C., Iwamoto T., Zhao Z., et al. Wafer-scale mapping of carrier density and mobility with terahertz time-domain ellipsometry. Optics Letters 50(3), 948-951 (2025); https://doi.org/10.1364/OL.546091.
抄録	Terahertz (THz) measurements are increasingly valued for nondestructive testing of materials in power devices and other applications. Hence, there is a growing demand for highly accurate characterization methods in the THz range. Here we demonstrate the application of THz time-domain ellipsometry (THz-TDE) to large-scale, quantitative mapping of semiconductor wafers. While THz-TDE is an established technique, its application in wafer-scale mapping, which is an important process in the semiconductor industry, has not yet been demonstrated. In this work, we highlight the effectiveness of THz-TDE by mapping the electrical properties of a widely used semiconductor, silicon carbide (SiC). Spatial distribution maps of conductivity, carrier density, and mobility of a commercial 4-in. SiC wafer are derived using the measured ellipsometric parameters. THz-TDE mapping offers a nondestructive, contactless testing method to evaluate semiconductor quality and electrical homogeneity and is notably suitable for doped semiconductors characterized by high THz absorption.
出版者	Optica Publishing Group (formerly OSA)
収録物名	Optics Letters
巻(号)	50(3)
ページ	948-951
刊行年月	2025-01-27
言語	英語
ハンドルURL	https://hdl.handle.net/11094/106458
PISSN	01469592
eISSN	15394794
関連情報 (isVersionOf)	DOI (出版社版) https://doi.org/10.1364/OL.546091
アクセス権	open access
権利情報	© 2025 Optica Publishing Group. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.
出版タイプ	Accepted Manuscript
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	Optics Letters. 2025, 50(3), p. 948-951
DC.title	Wafer-scale mapping of carrier density and mobility with terahertz time-domain ellipsometry
DC.creator	Agulto, Verdad C.
	Iwamoto, Toshiyuki
	Zhao, Zixi
	Liu, Shuang
	Kato, Kosaku
	Nakajima, Makoto
DC.publisher	Optica Publishing Group (formerly OSA)
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2025-01-27
DC.identifier	https://doi.org/10.1364/OL.546091
DC.description	Agulto V.C., Iwamoto T., Zhao Z., et al. Wafer-scale mapping of carrier density and mobility with terahertz time-domain ellipsometry. Optics Letters 50(3), 948-951 (2025); https://doi.org/10.1364/OL.546091.
DCTERMS.abstract	Terahertz (THz) measurements are increasingly valued for nondestructive testing of materials in power devices and other applications. Hence, there is a growing demand for highly accurate characterization methods in the THz range. Here we demonstrate the application of THz time-domain ellipsometry (THz-TDE) to large-scale, quantitative mapping of semiconductor wafers. While THz-TDE is an established technique, its application in wafer-scale mapping, which is an important process in the semiconductor industry, has not yet been demonstrated. In this work, we highlight the effectiveness of THz-TDE by mapping the electrical properties of a widely used semiconductor, silicon carbide (SiC). Spatial distribution maps of conductivity, carrier density, and mobility of a commercial 4-in. SiC wafer are derived using the measured ellipsometric parameters. THz-TDE mapping offers a nondestructive, contactless testing method to evaluate semiconductor quality and electrical homogeneity and is notably suitable for doped semiconductors characterized by high THz absorption.
DC.rights	© 2025 Optica Publishing Group. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.
DC.format	106458
citation_title	Wafer-scale mapping of carrier density and mobility with terahertz time-domain ellipsometry
citation_author	Agulto, Verdad C.
	Iwamoto, Toshiyuki
	Zhao, Zixi
	Liu, Shuang
	Kato, Kosaku
	Nakajima, Makoto
citation_publisher	Optica Publishing Group (formerly OSA)
citation_language	英語
citation_date	2025-01-27
citation_journal_title	Optics Letters
citation_volume	50
citation_issue	3
citation_firstpage	948
citation_lastpage	951
citation_doi	https://doi.org/10.1364/OL.546091
citation_public_url	https://hdl.handle.net/11094/106458

Wafer-scale mapping of carrier density and mobility with terahertz time-domain ellipsometry

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