Third harmonic generation due to free carrier in InSb using a terahertz free electron laser

Phan, Thanh Nhat Khoa; Shimizu, Tomoki; Wang, You Wei; Kato, Kosaku; Agulto, Verdad C.; Isoyama, Goro; Fujioka, Shinsuke; Nakajima, Makoto

doi:https://doi.org/10.1364/ol.514693

Third harmonic generation due to free carrier in InSb using a terahertz free electron laser

Phan, Thanh Nhat Khoa; Shimizu, Tomoki; Wang, You Wei et al.

Optics Letters, 2024, 49(4), 1073-1076

アクセス数:32件（2026-09-20 05:42 集計）

固定URL: https://hdl.handle.net/11094/106461

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タイトル	Third harmonic generation due to free carrier in InSb using a terahertz free electron laser
著者	ORCID 0009-0008-4491-0459 0009-0008-4491-0459 Scopus Author ID 57193203069 57193203069 著者名 Phan, Thanh Nhat Khoa
	著者名 Shimizu, Tomoki
	著者名 Wang, You Wei
	NRID 1000040751087 1000040751087 ORCID 0000-0002-9977-7439 0000-0002-9977-7439 researchmap permalink kosakukato kosakukato Scopus Author ID 57189303489 57189303489 著者名 Kato, Kosaku
	ORCID 0000-0002-5408-5148 0000-0002-5408-5148 researchmap permalink verdadagulto verdadagulto Scopus Author ID 57194092779 57194092779 著者名 Agulto, Verdad C.
	NRID 1000080125989 1000080125989 著者名 Isoyama, Goro
	NRID 1000040372635 1000040372635 ORCID 0000-0001-8406-1772 0000-0001-8406-1772 researchmap permalink shinsuke_fujioka shinsuke_fujioka Scopus Author ID 24474814400 24474814400 著者名 Fujioka, Shinsuke
	NRID 1000040361662 1000040361662 ORCID 0000-0002-0351-2197 0000-0002-0351-2197 researchmap permalink nakajimamakoto nakajimamakoto Scopus Author ID 55236697600 55236697600 著者名 Nakajima, Makoto
内容	Phan T.N.K., Tomoki S., Wang Y.W., et al. Third harmonic generation due to free carrier in InSb using a terahertz free electron laser. Optics Letters 49(4), 1073-1076 (2024); https://doi.org/10.1364/ol.514693.
抄録	We report on the third harmonic generation (THG) in InSb semiconductor irradiated by a terahertz (THz) free electron laser (FEL). The conversion of 4 THz (wavelength 70 µm) FEL outputs into its third harmonic 12 THz was observed. We found that by tuning the sample temperature to 360 K, high conversion efficiency up to 1% can be obtained and is the highest in the THz and FIR regions below 10 THz. We also discuss the observed intensity dependence of the THG with the nonlinear order lower than 3 when the pumping intensity was high.
出版者	Optica Publishing Group (formerly OSA)
収録物名	Optics Letters
巻(号)	49(4)
ページ	1073-1076
刊行年月	2024-02-15
言語	英語
ハンドルURL	https://hdl.handle.net/11094/106461
PISSN	01469592
eISSN	15394794
関連情報 (isVersionOf)	DOI (出版社版) https://doi.org/10.1364/ol.514693
アクセス権	open access
権利情報	© 2024 Optica Publishing Group. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.
出版タイプ	Accepted Manuscript
カテゴリ	学術雑誌論文 Journal Article
カテゴリ	学術雑誌論文付属データあり Journal Article with associated Data

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	Optics Letters. 2024, 49(4), p. 1073-1076
DC.title	Third harmonic generation due to free carrier in InSb using a terahertz free electron laser
DC.creator	Phan, Thanh Nhat Khoa
	Shimizu, Tomoki
	Wang, You Wei
	Kato, Kosaku
	Agulto, Verdad C.
	Isoyama, Goro
	Fujioka, Shinsuke
	Nakajima, Makoto
DC.publisher	Optica Publishing Group (formerly OSA)
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2024-02-15
DC.identifier	https://doi.org/10.1364/ol.514693
DC.description	Phan T.N.K., Tomoki S., Wang Y.W., et al. Third harmonic generation due to free carrier in InSb using a terahertz free electron laser. Optics Letters 49(4), 1073-1076 (2024); https://doi.org/10.1364/ol.514693.
DCTERMS.abstract	We report on the third harmonic generation (THG) in InSb semiconductor irradiated by a terahertz (THz) free electron laser (FEL). The conversion of 4 THz (wavelength 70 µm) FEL outputs into its third harmonic 12 THz was observed. We found that by tuning the sample temperature to 360 K, high conversion efficiency up to 1% can be obtained and is the highest in the THz and FIR regions below 10 THz. We also discuss the observed intensity dependence of the THG with the nonlinear order lower than 3 when the pumping intensity was high.
DC.rights	© 2024 Optica Publishing Group. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.
DC.format	106461
citation_title	Third harmonic generation due to free carrier in InSb using a terahertz free electron laser
citation_author	Phan, Thanh Nhat Khoa
	Shimizu, Tomoki
	Wang, You Wei
	Kato, Kosaku
	Agulto, Verdad C.
	Isoyama, Goro
	Fujioka, Shinsuke
	Nakajima, Makoto
citation_publisher	Optica Publishing Group (formerly OSA)
citation_language	英語
citation_date	2024-02-15
citation_journal_title	Optics Letters
citation_volume	49
citation_issue	4
citation_firstpage	1073
citation_lastpage	1076
citation_doi	https://doi.org/10.1364/ol.514693
citation_public_url	https://hdl.handle.net/11094/106461

Third harmonic generation due to free carrier in InSb using a terahertz free electron laser

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