Gas Tunnel Type Plasma Spraying of Silicon Carbide Films for Thermoelectric Applications

Fahim, F. Narges; Kobayashi, Akira

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jwri34_02_041	pdf	354 KB	348	2012.09.22

論文情報

タイトル	Gas Tunnel Type Plasma Spraying of Silicon Carbide Films for Thermoelectric Applications
著者	著者名 Fahim, F. Narges
著者	NRID 1000070110773 1000070110773 著者名 Kobayashi, Akira
キーワード等	Silicon carbide
	Gas tunnel plasma spraying
	Thermoelectric materials
	Microstructure
抄録	Silicon carbide deposition is an attractive process for aerospace applications requiring properties of chemical and mechanical resistance at ultra-high temperatures. The main objective of the research is the fabrication and characterization of plasma sprayed deposition of silicon carbide films for high temperature thermoelectric applications. Gas tunnel plasma spraying has been applied successfully for the deposition of SiC films on stainless steel substrates.The microstructure and surface morphology of the SiC films were characterized by means of X-ray diffraction (XRD) and scanning electron microscope (SEM). The control of the processing parameters such as powder feeding rate, composition of plasma working gases, spraying distance, and carrier gas flow rate allowed the deposition of dense, uniform, continuous, and high purity crystalline SiC films. The thickness of the SiC films varied from 3 μm to 10 μm.
出版者	大阪大学接合科学研究所
	オオサカダイガクセツゴウカガクケンキュウジョ
	Joining and Welding Research Institute, Osaka University
収録物名	Transactions of JWRI
巻	34
号	2
開始ページ	41
終了ページ	43
刊行年月	2005-12
言語	英語
ハンドルURL	https://hdl.handle.net/11094/11462
ISSN	03874508
NCID	AA00867058
アクセス権	open access
出版タイプ	Version of Record
カテゴリ	紀要論文 Departmental Bulletin Paper
カテゴリ	Transactions of JWRI / Vol.34 No.2 (2005-12)

資源タイプ	紀要論文
ローカル資源タイプ	紀要論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	Transactions of JWRI.34(2) p.41-p.43
DC.title	Gas Tunnel Type Plasma Spraying of Silicon Carbide Films for Thermoelectric Applications
DC.creator	Fahim, F. Narges
DC.creator	Kobayashi, Akira
DC.publisher	大阪大学接合科学研究所
	オオサカダイガクセツゴウカガクケンキュウジョ
	Joining and Welding Research Institute, Osaka University
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2005-12
DC.subject	Silicon carbide
	Gas tunnel plasma spraying
	Thermoelectric materials
	Microstructure
DCTERMS.abstract	Silicon carbide deposition is an attractive process for aerospace applications requiring properties of chemical and mechanical resistance at ultra-high temperatures. The main objective of the research is the fabrication and characterization of plasma sprayed deposition of silicon carbide films for high temperature thermoelectric applications. Gas tunnel plasma spraying has been applied successfully for the deposition of SiC films on stainless steel substrates.The microstructure and surface morphology of the SiC films were characterized by means of X-ray diffraction (XRD) and scanning electron microscope (SEM). The control of the processing parameters such as powder feeding rate, composition of plasma working gases, spraying distance, and carrier gas flow rate allowed the deposition of dense, uniform, continuous, and high purity crystalline SiC films. The thickness of the SiC films varied from 3 μm to 10 μm.
DC.format	application/pdf
citation_title	Gas Tunnel Type Plasma Spraying of Silicon Carbide Films for Thermoelectric Applications
citation_author	Fahim, F. Narges
citation_author	Kobayashi, Akira
citation_publisher	大阪大学接合科学研究所
	オオサカダイガクセツゴウカガクケンキュウジョ
	Joining and Welding Research Institute, Osaka University
citation_language	英語
citation_date	2005-12
citation_journal_title	Transactions of JWRI
citation_volume	34
citation_issue	2
citation_firstpage	41
citation_lastpage	43
citation_issn	03874508
citation_public_url	https://hdl.handle.net/11094/11462

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