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jwri34_02_041
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論文情報
タイトル
Gas Tunnel Type Plasma Spraying of Silicon Carbide Films for Thermoelectric Applications
著者
Fahim, F. Narges
Fahim, F. Narges
Kobayashi, Akira
Kobayashi, Akira
キーワード等
Silicon carbide
Gas tunnel plasma spraying
Thermoelectric materials
Microstructure
抄録
Silicon carbide deposition is an attractive process for aerospace applications requiring properties of chemical and mechanical resistance at ultra-high temperatures. The main objective of the research is the fabrication and characterization of plasma sprayed deposition of silicon carbide films for high temperature thermoelectric applications. Gas tunnel plasma spraying has been applied successfully for the deposition of SiC films on stainless steel substrates.The microstructure and surface morphology of the SiC films were characterized by means of X-ray diffraction (XRD) and scanning electron microscope (SEM). The control of the processing parameters such as powder feeding rate, composition of plasma working gases, spraying distance, and carrier gas flow rate allowed the deposition of dense, uniform, continuous, and high purity crystalline SiC films. The thickness of the SiC films varied from 3 μm to 10 μm.
公開者
大阪大学接合科学研究所
公開者の別表記
Joining and Welding Research Institute, Osaka University
公開者 (ヨミ)
オオサカ ダイガク セツゴウ カガク ケンキュウジョ
掲載誌名
Transactions of JWRI
巻
34
号
2
開始ページ
41
終了ページ
43
刊行年月
2005-12
ISSN
03874508
NCID
AA00867058
URL
http://hdl.handle.net/11094/11462
言語
英語
カテゴリ
紀要論文 Departmental Bulletin Paper
Transactions of JWRI / Vol.34 No.2 (2005-12)
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著者版フラグ
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text
DCTERMS.bibliographicCitation
Transactions of JWRI.34(2) P.41-P.43
DC.title
Gas Tunnel Type Plasma Spraying of Silicon Carbide Films for Thermoelectric Applications
DC.creator
Fahim, F. Narges
Kobayashi, Akira
DC.publisher
大阪大学接合科学研究所
DC.language" scheme="DCTERMS.RFC1766
英語
DCTERMS.issued" scheme="DCTERMS.W3CDTF
2005-12
DC.identifier" scheme="DCTERMS.URI
http://hdl.handle.net/11094/11462
DC.subject
Silicon carbide
Gas tunnel plasma spraying
Thermoelectric materials
Microstructure
DCTERMS.abstract
Silicon carbide deposition is an attractive process for aerospace applications requiring properties of chemical and mechanical resistance at ultra-high temperatures. The main objective of the research is the fabrication and characterization of plasma sprayed deposition of silicon carbide films for high temperature thermoelectric applications. Gas tunnel plasma spraying has been applied successfully for the deposition of SiC films on stainless steel substrates.The microstructure and surface morphology of the SiC films were characterized by means of X-ray diffraction (XRD) and scanning electron microscope (SEM). The control of the processing parameters such as powder feeding rate, composition of plasma working gases, spraying distance, and carrier gas flow rate allowed the deposition of dense, uniform, continuous, and high purity crystalline SiC films. The thickness of the SiC films varied from 3 μm to 10 μm.
citation_title
Gas Tunnel Type Plasma Spraying of Silicon Carbide Films for Thermoelectric Applications
citation_author
Fahim, F. Narges
Kobayashi, Akira
citation_publisher
大阪大学接合科学研究所
citation_language
英語
citation_date
2005-12
citation_journal_title
Transactions of JWRI
citation_volume
34
citation_issue
2
citation_firstpage
41
citation_lastpage
43
citation_issn
03874508
citation_public_url
http://hdl.handle.net/11094/11462
citation_keywords
Silicon carbide
Gas tunnel plasma spraying
Thermoelectric materials
Microstructure