紀要論文

紀要論文

text

Transactions of JWRI. 2005, 34(2), p. 41-43

Gas Tunnel Type Plasma Spraying of Silicon Carbide Films for Thermoelectric Applications

英語

text

2005-12

Silicon carbide deposition is an attractive process for aerospace applications requiring properties of chemical and mechanical resistance at ultra-high temperatures. The main objective of the research is the fabrication and characterization of plasma sprayed deposition of silicon carbide films for high temperature thermoelectric applications. Gas tunnel plasma spraying has been applied successfully for the deposition of SiC films on stainless steel substrates.The microstructure and surface morphology of the SiC films were characterized by means of X-ray diffraction (XRD) and scanning electron microscope (SEM). The control of the processing parameters such as powder feeding rate, composition of plasma working gases, spraying distance, and carrier gas flow rate allowed the deposition of dense, uniform, continuous, and high purity crystalline SiC films. The thickness of the SiC films varied from 3 μm to 10 μm.

10.18910/11462

11462

Gas Tunnel Type Plasma Spraying of Silicon Carbide Films for Thermoelectric Applications

大阪大学接合科学研究所

英語

2005-12

Transactions of JWRI

34

2

41

43

https://hdl.handle.net/11094/11462

10.18910/11462

https://doi.org/10.18910/11462