Ohmic Contact Mechanism of Titanium-based Electrodes on n-type Gallium Nitride

Maeda, Masakatsu; Yamasaki, Takao; Takahashi, Yasuo

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タイトル	Ohmic Contact Mechanism of Titanium-based Electrodes on n-type Gallium Nitride
著者	Maeda, Masakatsu Maeda, Masakatsu
	Yamasaki, Takao Yamasaki, Takao
	Takahashi, Yasuo Takahashi, Yasuo
キーワード等	Ohmic contact
	n-type GaN
	Wide-bandgap compound semiconductor
	Interfacial reaction
	nitrogen vacancy
	TiN
	Schottky barrier
抄録	Electrical properties at the interface between n-type gallium nitride (GaN) and Ti-based contact layers formed by radio-frequency magnetron sputter deposition under various conditions were investigated to clarify the mechanism to achieve ohmic contacts. TiN contacts deposited using N2 gas are non-ohmic. Therefore, formation of TiN adjacent to GaN is not a necessary condition for achieving ohmic properties. On the other hand, Ti contacts deposited using Ar gas are ohmic in the as-deposited state, even though a layer of Ti2N is formed between GaN and Ti during the deposition. It is also shown that Ti deposition on undoped GaN produces ohmic contacts. The nitrogen vacancies increased in the sub-interface of GaN are essential for ohmic properties. The interfacial reaction between Ti and GaN to form nitrogen vacancies is affected by the partial pressure of N2 during the deposition.
公開者	大阪大学接合科学研究所
公開者の別表記	Joining and Welding Research Institute, Osaka University
公開者 (ヨミ)	オオサカダイガクセツゴウカガクケンキュウジョ
掲載誌名	Transactions of JWRI
巻	41
号	1
開始ページ	45
終了ページ	48
刊行年月	2012-06
ISSN	03874508
NCID	AA00867058
URL	http://hdl.handle.net/11094/23155
言語	英語

著者版フラグ	publisher
NII資源タイプ	紀要論文
ローカル資源タイプ	紀要論文
dcmi資源タイプ	text
DCTERMS.bibliographicCitation	Transactions of JWRI.41(1) P.45-P.48
DC.title	Ohmic Contact Mechanism of Titanium-based Electrodes on n-type Gallium Nitride
DC.creator	Maeda, Masakatsu
	Yamasaki, Takao
	Takahashi, Yasuo
DC.publisher	大阪大学接合科学研究所
DC.language" scheme="DCTERMS.RFC1766	英語
DCTERMS.issued" scheme="DCTERMS.W3CDTF	2012-06
DC.identifier" scheme="DCTERMS.URI	http://hdl.handle.net/11094/23155
DC.subject	Ohmic contact
	n-type GaN
	Wide-bandgap compound semiconductor
	Interfacial reaction
	nitrogen vacancy
	TiN
	Schottky barrier
DCTERMS.abstract	Electrical properties at the interface between n-type gallium nitride (GaN) and Ti-based contact layers formed by radio-frequency magnetron sputter deposition under various conditions were investigated to clarify the mechanism to achieve ohmic contacts. TiN contacts deposited using N2 gas are non-ohmic. Therefore, formation of TiN adjacent to GaN is not a necessary condition for achieving ohmic properties. On the other hand, Ti contacts deposited using Ar gas are ohmic in the as-deposited state, even though a layer of Ti2N is formed between GaN and Ti during the deposition. It is also shown that Ti deposition on undoped GaN produces ohmic contacts. The nitrogen vacancies increased in the sub-interface of GaN are essential for ohmic properties. The interfacial reaction between Ti and GaN to form nitrogen vacancies is affected by the partial pressure of N2 during the deposition.
citation_title	Ohmic Contact Mechanism of Titanium-based Electrodes on n-type Gallium Nitride
citation_author	Maeda, Masakatsu
	Yamasaki, Takao
	Takahashi, Yasuo
citation_publisher	大阪大学接合科学研究所
citation_language	英語
citation_date	2012-06
citation_journal_title	Transactions of JWRI
citation_volume	41
citation_issue	1
citation_firstpage	45
citation_lastpage	48
citation_issn	03874508
citation_public_url	http://hdl.handle.net/11094/23155
citation_keywords	Ohmic contact
	n-type GaN
	Wide-bandgap compound semiconductor
	Interfacial reaction
	nitrogen vacancy
	TiN
	Schottky barrier

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