Ohmic Contact Mechanism of Titanium-based Electrodes on n-type Gallium Nitride

Maeda, Masakatsu; Yamasaki, Takao; Takahashi, Yasuo

doi:https://doi.org/10.18910/23155

Ohmic Contact Mechanism of Titanium-based Electrodes on n-type Gallium Nitride

Maeda, Masakatsu; Yamasaki, Takao; Takahashi, Yasuo

Transactions of JWRI, 2012, 41(1), 45-48

アクセス数:392件（2025-07-13 22:25 集計）

固定URL: https://doi.org/10.18910/23155

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タイトル	Ohmic Contact Mechanism of Titanium-based Electrodes on n-type Gallium Nitride
著者	NRID 1000000263327 1000000263327 著者名 Maeda, Masakatsu
	NRID 1000070404069 1000070404069 著者名 Yamasaki, Takao
	NRID 1000080144434 1000080144434 著者名 Takahashi, Yasuo
キーワード等	Ohmic contact
	n-type GaN
	Wide-bandgap compound semiconductor
	Interfacial reaction
	nitrogen vacancy
	TiN
	Schottky barrier
抄録	Electrical properties at the interface between n-type gallium nitride (GaN) and Ti-based contact layers formed by radio-frequency magnetron sputter deposition under various conditions were investigated to clarify the mechanism to achieve ohmic contacts. TiN contacts deposited using N2 gas are non-ohmic. Therefore, formation of TiN adjacent to GaN is not a necessary condition for achieving ohmic properties. On the other hand, Ti contacts deposited using Ar gas are ohmic in the as-deposited state, even though a layer of Ti2N is formed between GaN and Ti during the deposition. It is also shown that Ti deposition on undoped GaN produces ohmic contacts. The nitrogen vacancies increased in the sub-interface of GaN are essential for ohmic properties. The interfacial reaction between Ti and GaN to form nitrogen vacancies is affected by the partial pressure of N2 during the deposition.
出版者	大阪大学接合科学研究所
	オオサカダイガクセツゴウカガクケンキュウジョ
	Joining and Welding Research Institute, Osaka University
収録物名	Transactions of JWRI
巻(号)	41(1)
ページ	45-48
刊行年月	2012-06
言語	英語
ハンドルURL	https://hdl.handle.net/11094/23155
DOI	https://doi.org/10.18910/23155
PISSN	03874508
NCID	AA00867058
アクセス権	open access
出版タイプ	Version of Record
カテゴリ	紀要論文 Departmental Bulletin Paper
カテゴリ	Transactions of JWRI / Vol.41 No.1 (2012-06)

資源タイプ	紀要論文
ローカル資源タイプ	紀要論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	Transactions of JWRI. 2012, 41(1), p. 45-48
DC.title	Ohmic Contact Mechanism of Titanium-based Electrodes on n-type Gallium Nitride
DC.creator	Maeda, Masakatsu
	Yamasaki, Takao
	Takahashi, Yasuo
DC.publisher	大阪大学接合科学研究所
	オオサカダイガクセツゴウカガクケンキュウジョ
	Joining and Welding Research Institute, Osaka University
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2012-06
DC.subject	Ohmic contact
	n-type GaN
	Wide-bandgap compound semiconductor
	Interfacial reaction
	nitrogen vacancy
	TiN
	Schottky barrier
DCTERMS.abstract	Electrical properties at the interface between n-type gallium nitride (GaN) and Ti-based contact layers formed by radio-frequency magnetron sputter deposition under various conditions were investigated to clarify the mechanism to achieve ohmic contacts. TiN contacts deposited using N2 gas are non-ohmic. Therefore, formation of TiN adjacent to GaN is not a necessary condition for achieving ohmic properties. On the other hand, Ti contacts deposited using Ar gas are ohmic in the as-deposited state, even though a layer of Ti2N is formed between GaN and Ti during the deposition. It is also shown that Ti deposition on undoped GaN produces ohmic contacts. The nitrogen vacancies increased in the sub-interface of GaN are essential for ohmic properties. The interfacial reaction between Ti and GaN to form nitrogen vacancies is affected by the partial pressure of N2 during the deposition.
DC.identifier	10.18910/23155
DC.format	23155
citation_title	Ohmic Contact Mechanism of Titanium-based Electrodes on n-type Gallium Nitride
citation_author	Maeda, Masakatsu
	Yamasaki, Takao
	Takahashi, Yasuo
citation_publisher	大阪大学接合科学研究所
citation_language	英語
citation_date	2012-06
citation_journal_title	Transactions of JWRI
citation_volume	41
citation_issue	1
citation_firstpage	45
citation_lastpage	48
citation_public_url	https://hdl.handle.net/11094/23155
citation_doi_detail	10.18910/23155
citation_doi	https://doi.org/10.18910/23155

Ohmic Contact Mechanism of Titanium-based Electrodes on n-type Gallium Nitride

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