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論文情報
タイトル
Ohmic Contact Mechanism of Titanium-based Electrodes on n-type Gallium Nitride
著者
Maeda, Masakatsu
Maeda, Masakatsu
Yamasaki, Takao
Yamasaki, Takao
Takahashi, Yasuo
Takahashi, Yasuo
キーワード等
Ohmic contact
n-type GaN
Wide-bandgap compound semiconductor
Interfacial reaction
nitrogen vacancy
TiN
Schottky barrier
抄録
Electrical properties at the interface between n-type gallium nitride (GaN) and Ti-based contact layers formed by radio-frequency magnetron sputter deposition under various conditions were investigated to clarify the mechanism to achieve ohmic contacts. TiN contacts deposited using N2 gas are non-ohmic. Therefore, formation of TiN adjacent to GaN is not a necessary condition for achieving ohmic properties. On the other hand, Ti contacts deposited using Ar gas are ohmic in the as-deposited state, even though a layer of Ti2N is formed between GaN and Ti during the deposition. It is also shown that Ti deposition on undoped GaN produces ohmic contacts. The nitrogen vacancies increased in the sub-interface of GaN are essential for ohmic properties. The interfacial reaction between Ti and GaN to form nitrogen vacancies is affected by the partial pressure of N2 during the deposition.
公開者
大阪大学接合科学研究所
公開者の別表記
Joining and Welding Research Institute, Osaka University
公開者 (ヨミ)
オオサカ ダイガク セツゴウ カガク ケンキュウジョ
掲載誌名
Transactions of JWRI
巻
41
号
1
開始ページ
45
終了ページ
48
刊行年月
2012-06
ISSN
03874508
NCID
AA00867058
URL
http://hdl.handle.net/11094/23155
言語
英語
カテゴリ
紀要論文 Departmental Bulletin Paper
Transactions of JWRI / Vol.41 No.1 (2012-06)
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著者版フラグ
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text
DCTERMS.bibliographicCitation
Transactions of JWRI.41(1) P.45-P.48
DC.title
Ohmic Contact Mechanism of Titanium-based Electrodes on n-type Gallium Nitride
DC.creator
Maeda, Masakatsu
Yamasaki, Takao
Takahashi, Yasuo
DC.publisher
大阪大学接合科学研究所
DC.language" scheme="DCTERMS.RFC1766
英語
DCTERMS.issued" scheme="DCTERMS.W3CDTF
2012-06
DC.identifier" scheme="DCTERMS.URI
http://hdl.handle.net/11094/23155
DC.subject
Ohmic contact
n-type GaN
Wide-bandgap compound semiconductor
Interfacial reaction
nitrogen vacancy
TiN
Schottky barrier
DCTERMS.abstract
Electrical properties at the interface between n-type gallium nitride (GaN) and Ti-based contact layers formed by radio-frequency magnetron sputter deposition under various conditions were investigated to clarify the mechanism to achieve ohmic contacts. TiN contacts deposited using N2 gas are non-ohmic. Therefore, formation of TiN adjacent to GaN is not a necessary condition for achieving ohmic properties. On the other hand, Ti contacts deposited using Ar gas are ohmic in the as-deposited state, even though a layer of Ti2N is formed between GaN and Ti during the deposition. It is also shown that Ti deposition on undoped GaN produces ohmic contacts. The nitrogen vacancies increased in the sub-interface of GaN are essential for ohmic properties. The interfacial reaction between Ti and GaN to form nitrogen vacancies is affected by the partial pressure of N2 during the deposition.
citation_title
Ohmic Contact Mechanism of Titanium-based Electrodes on n-type Gallium Nitride
citation_author
Maeda, Masakatsu
Yamasaki, Takao
Takahashi, Yasuo
citation_publisher
大阪大学接合科学研究所
citation_language
英語
citation_date
2012-06
citation_journal_title
Transactions of JWRI
citation_volume
41
citation_issue
1
citation_firstpage
45
citation_lastpage
48
citation_issn
03874508
citation_public_url
http://hdl.handle.net/11094/23155
citation_keywords
Ohmic contact
n-type GaN
Wide-bandgap compound semiconductor
Interfacial reaction
nitrogen vacancy
TiN
Schottky barrier