Effects of Reducing Annealing Temperature on Ni/Al Ohmic Contacts to n- and p-Type 4H-SiC

Ito, Kazuhiro; Takeda, Hidehisa; Shirai, Yasuharu; Murakami, Masanori

このアイテムのアクセス数:80件（2022-08-17 08:01 集計）

このアイテムへのリンクには次のURLをご利用ください:http://hdl.handle.net/11094/24856

閲覧可能ファイル

ファイル	フォーマット	サイズ	閲覧回数	説明
jwri41_02-033	pdf	961 KB	90

論文情報

タイトル	Effects of Reducing Annealing Temperature on Ni/Al Ohmic Contacts to n- and p-Type 4H-SiC
著者	Ito, Kazuhiro Ito, Kazuhiro
	Takeda, Hidehisa Takeda, Hidehisa
	Shirai, Yasuharu Shirai, Yasuharu
	Murakami, Masanori Murakami, Masanori
キーワード等	Ni/Al contacts
	SiC substrates
	Ohmic contacts
	δ-Ni_2Si(Al)
	Annealing temperature effects
抄録	Effects of reducing annealing temperature on a technique for the simultaneous formation of Ni/Al ohmic contacts exhibiting ohmic behavior to both n- and p-type SiC were investigated. The Ni/Al contacts reacted with the SiC substrates at 900℃, leading to formation of δ-Ni_2Si(Al). There was no contact consisting of δ-Ni_2Si(Al) after annealing at 900℃ for 20 min exhibited ohmic behavior to both n- and p-type SiC. Since Al concentration in the δ-Ni_2Si(Al) grains increased as the annealing temperature decreased due to less evaporation of the Al layer during annealing, and thus it is difficult to control the narrow range of Al concentration appropriate to exhibit ohmic behavior to both n- and p-type SiC using a conventional deposition technique. The specific contact resistances of the contacts which exhibited ohmic behavior to n-type SiC after annealing at 900℃ for 20 min were higher than those after annealing at 1000℃ for 5 min. In contrast, those which exhibited ohmic behavior to p-type SiC did not vary with annealing temperature. On the other hand, the specific contact resistance of the Ni(50 nm)/Al(10 nm) contact consisting of δ-Ni_2Si(8 at%Al) to p-type SiC was reduced to be about 4.0 × 10＾–4 Ωcm².
公開者	大阪大学接合科学研究所
公開者の別表記	Joining and Welding Research Institute, Osaka University
公開者 (ヨミ)	オオサカダイガクセツゴウカガクケンキュウジョ
掲載誌名	Transactions of JWRI
巻	41
号	2
開始ページ	33
終了ページ	38
刊行年月	2012-12
ISSN	03874508
NCID	AA00867058
URL	http://hdl.handle.net/11094/24856
言語	英語
カテゴリ	紀要論文 Departmental Bulletin Paper
カテゴリ	Transactions of JWRI / Vol.41 No.2 (2012-12)

著者版フラグ	publisher
NII資源タイプ	紀要論文
ローカル資源タイプ	紀要論文
dcmi資源タイプ	text
DCTERMS.bibliographicCitation	Transactions of JWRI.41(2) P.33-P.38
DC.title	Effects of Reducing Annealing Temperature on Ni/Al Ohmic Contacts to n- and p-Type 4H-SiC
DC.creator	Ito, Kazuhiro
	Takeda, Hidehisa
	Shirai, Yasuharu
	Murakami, Masanori
DC.publisher	大阪大学接合科学研究所
DC.language" scheme="DCTERMS.RFC1766	英語
DCTERMS.issued" scheme="DCTERMS.W3CDTF	2012-12
DC.identifier" scheme="DCTERMS.URI	http://hdl.handle.net/11094/24856
DC.subject	Ni/Al contacts
	SiC substrates
	Ohmic contacts
	δ-Ni_2Si(Al)
	Annealing temperature effects
DCTERMS.abstract	Effects of reducing annealing temperature on a technique for the simultaneous formation of Ni/Al ohmic contacts exhibiting ohmic behavior to both n- and p-type SiC were investigated. The Ni/Al contacts reacted with the SiC substrates at 900℃, leading to formation of δ-Ni_2Si(Al). There was no contact consisting of δ-Ni_2Si(Al) after annealing at 900℃ for 20 min exhibited ohmic behavior to both n- and p-type SiC. Since Al concentration in the δ-Ni_2Si(Al) grains increased as the annealing temperature decreased due to less evaporation of the Al layer during annealing, and thus it is difficult to control the narrow range of Al concentration appropriate to exhibit ohmic behavior to both n- and p-type SiC using a conventional deposition technique. The specific contact resistances of the contacts which exhibited ohmic behavior to n-type SiC after annealing at 900℃ for 20 min were higher than those after annealing at 1000℃ for 5 min. In contrast, those which exhibited ohmic behavior to p-type SiC did not vary with annealing temperature. On the other hand, the specific contact resistance of the Ni(50 nm)/Al(10 nm) contact consisting of δ-Ni_2Si(8 at%Al) to p-type SiC was reduced to be about 4.0 × 10＾–4 Ωcm².
citation_title	Effects of Reducing Annealing Temperature on Ni/Al Ohmic Contacts to n- and p-Type 4H-SiC
citation_author	Ito, Kazuhiro
	Takeda, Hidehisa
	Shirai, Yasuharu
	Murakami, Masanori
citation_publisher	大阪大学接合科学研究所
citation_language	英語
citation_date	2012-12
citation_journal_title	Transactions of JWRI
citation_volume	41
citation_issue	2
citation_firstpage	33
citation_lastpage	38
citation_issn	03874508
citation_public_url	http://hdl.handle.net/11094/24856
citation_keywords	Ni/Al contacts
	SiC substrates
	Ohmic contacts
	δ-Ni_2Si(Al)
	Annealing temperature effects

閲覧可能ファイル

論文情報

論文詳細を表示