Fabrication of SiC Ceramic Bonded Carbon and Its Joining with W

Chen, Weiwu; Miyamoto, Yoshinari

doi:https://doi.org/10.18910/24868

Fabrication of SiC Ceramic Bonded Carbon and Its Joining with W

Chen, Weiwu; Miyamoto, Yoshinari

Transactions of JWRI, 2012, 41(2), 47-50

アクセス数:366件（2026-02-16 12:45 集計）

固定URL: https://doi.org/10.18910/24868

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タイトル	Fabrication of SiC Ceramic Bonded Carbon and Its Joining with W
著者	著者名 Chen, Weiwu
著者	NRID 1000060107084 1000060107084 著者名 Miyamoto, Yoshinari
キーワード等	Silicon carbide
	Ceramic bonded carbon
	Joining
	Tungsten
抄録	To obtain light and tough ceramic bonded carbon (CBC) materials with high thermal conductivity SiC Ceramic bonded carbon (SiC/CBC) is developed using Si_3N_4 and carbon powders (30:70 in volume ratio) and sintering by spark plasma sintering at temperatures of 1900℃. The SiC/CBC were highly dense (98% theoretical density), lightweight (2.42 Mg/m³), and had both relatively high bending strength and thermal conductivity (150 MPa and 138 W/mK, respectively). Moreover, the SiC/CBC could be joined tightly with W. The joints of SiC/CBC and W may be used as heat-sinks for W-based plasma facing components. The joining strength between W and SiC/CBC was 33 MPa when measured by a tensile test and 90 MPa by a bending test.
出版者	大阪大学接合科学研究所
	オオサカダイガクセツゴウカガクケンキュウジョ
	Joining and Welding Research Institute, Osaka University
収録物名	Transactions of JWRI
巻(号)	41(2)
ページ	47-50
刊行年月	2012-12
言語	英語
ハンドルURL	https://hdl.handle.net/11094/24868
DOI	https://doi.org/10.18910/24868
PISSN	03874508
NCID	AA00867058
アクセス権	open access
出版タイプ	Version of Record
カテゴリ	紀要論文 Departmental Bulletin Paper
カテゴリ	Transactions of JWRI / Vol.41 No.2 (2012-12)

資源タイプ	紀要論文
ローカル資源タイプ	紀要論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	Transactions of JWRI. 2012, 41(2), p. 47-50
DC.title	Fabrication of SiC Ceramic Bonded Carbon and Its Joining with W
DC.creator	Chen, Weiwu
DC.creator	Miyamoto, Yoshinari
DC.publisher	大阪大学接合科学研究所
	オオサカダイガクセツゴウカガクケンキュウジョ
	Joining and Welding Research Institute, Osaka University
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2012-12
DC.subject	Silicon carbide
	Ceramic bonded carbon
	Joining
	Tungsten
DCTERMS.abstract	To obtain light and tough ceramic bonded carbon (CBC) materials with high thermal conductivity SiC Ceramic bonded carbon (SiC/CBC) is developed using Si_3N_4 and carbon powders (30:70 in volume ratio) and sintering by spark plasma sintering at temperatures of 1900℃. The SiC/CBC were highly dense (98% theoretical density), lightweight (2.42 Mg/m³), and had both relatively high bending strength and thermal conductivity (150 MPa and 138 W/mK, respectively). Moreover, the SiC/CBC could be joined tightly with W. The joints of SiC/CBC and W may be used as heat-sinks for W-based plasma facing components. The joining strength between W and SiC/CBC was 33 MPa when measured by a tensile test and 90 MPa by a bending test.
DC.identifier	10.18910/24868
DC.format	24868
citation_title	Fabrication of SiC Ceramic Bonded Carbon and Its Joining with W
citation_author	Chen, Weiwu
citation_author	Miyamoto, Yoshinari
citation_publisher	大阪大学接合科学研究所
citation_language	英語
citation_date	2012-12
citation_journal_title	Transactions of JWRI
citation_volume	41
citation_issue	2
citation_firstpage	47
citation_lastpage	50
citation_public_url	https://hdl.handle.net/11094/24868
citation_doi_detail	10.18910/24868
citation_doi	https://doi.org/10.18910/24868

Fabrication of SiC Ceramic Bonded Carbon and Its Joining with W

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