I-V characteristics of single electron tunneling from symmetric and asymmetric double-barrier tunneling junctions

Negishi, R; Hasegawa, T; Terabe, K et al.

APPLIED PHYSICS LETTERS, 2007, 90(22), 223112-1-223112-3

アクセス数:302件（2025-04-28 05:27 集計）

固定URL: https://hdl.handle.net/11094/3093

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タイトル	I-V characteristics of single electron tunneling from symmetric and asymmetric double-barrier tunneling junctions
著者	著者名 Negishi, R
	著者名 Hasegawa, T
	著者名 Terabe, K
	著者名 Aono, M
	著者名 Tanaka, H
	NRID 1000080169185 1000080169185 著者名 Ogawa, T
	NRID 1000050464152 1000050464152 著者名 Ozawa, H
内容	Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 90(22), 223112, 2007 and may be found at http://dx.doi.org/10.1063/1.2745252
出版者	American Institute of Physics
収録物名	APPLIED PHYSICS LETTERS
巻(号)	90(22)
ページ	223112-1-223112-3
刊行年月	2007-05-28
言語	英語
ハンドルURL	https://hdl.handle.net/11094/3093
PISSN	00036951
NCID	AA00543431
関連情報 (isIdenticalTo)	DOI (出版社版) https://doi.org/10.1063/1.2745252
アクセス権	open access
出版タイプ	Version of Record
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	APPLIED PHYSICS LETTERS. 2007, 90(22), p. 223112-1-223112-3
DC.title	I-V characteristics of single electron tunneling from symmetric and asymmetric double-barrier tunneling junctions
DC.creator	Negishi, R
	Hasegawa, T
	Terabe, K
	Aono, M
	Tanaka, H
	Ogawa, T
	Ozawa, H
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2007-05-28
DC.identifier	https://doi.org/10.1063/1.2745252
DC.description	Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 90(22), 223112, 2007 and may be found at http://dx.doi.org/10.1063/1.2745252
DC.format	3093
citation_title	I-V characteristics of single electron tunneling from symmetric and asymmetric double-barrier tunneling junctions
citation_author	Negishi, R
	Hasegawa, T
	Terabe, K
	Aono, M
	Tanaka, H
	Ogawa, T
	Ozawa, H
citation_publisher	American Institute of Physics
citation_language	英語
citation_date	2007-05-28
citation_journal_title	APPLIED PHYSICS LETTERS
citation_volume	90
citation_issue	22
citation_firstpage	223112-1
citation_lastpage	223112-3
citation_doi	https://doi.org/10.1063/1.2745252
citation_public_url	https://hdl.handle.net/11094/3093