Formation of SiO₂ Scale in High-Temperature Oxidation of Wsi₂

Kurokawa, Kazuya; Shibayama, Akiko; Kobayashi, Akira

doi:https://doi.org/10.18910/3766

Formation of SiO₂ Scale in High-Temperature Oxidation of Wsi₂

Kurokawa, Kazuya; Shibayama, Akiko; Kobayashi, Akira

Transactions of JWRI, 2007, 36(2), 51-55

アクセス数:136件（2025-07-02 15:11 集計）

固定URL: https://doi.org/10.18910/3766

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タイトル	Formation of SiO₂ Scale in High-Temperature Oxidation of Wsi₂
著者	NRID 1000000161779 1000000161779 著者名 Kurokawa, Kazuya
	著者名 Shibayama, Akiko
	NRID 1000070110773 1000070110773 著者名 Kobayashi, Akira
キーワード等	WSi₂
	High-Temperature Oxidation
	Evaporation of WO₃
	Structure of Oxide Scale
	SiO₂ Scale
抄録	In order to clarify the relationship between evaporation of WO₃ and formation of a SiO₂ scale in WSi₂, high temperature oxidation tests of WSi₂ were carried out at the temperature range from 773 to 1773 K in air. The pronounced effect of the evaporation of WO₃ on the structure of oxide scale was found at temperatures higher than 1273 K, and a protective SiO₂ scale was formed above 1573 K. The requisite evaporation rate and the vapor pressure of WO₃ for the formation of a protective SiO₂ scale were estimated to be about 10⁻⁴kgm⁻²s⁻¹ and 10 Pa, respectively.
出版者	大阪大学接合科学研究所
	オオサカダイガクセツゴウカガクケンキュウジョ
	Joining and Welding Research Institute, Osaka University
収録物名	Transactions of JWRI
巻(号)	36(2)
ページ	51-55
刊行年月	2007-12
言語	英語
ハンドルURL	https://hdl.handle.net/11094/3766
DOI	https://doi.org/10.18910/3766
PISSN	03874508
NCID	AA00867058
アクセス権	open access
出版タイプ	Version of Record
カテゴリ	紀要論文 Departmental Bulletin Paper
カテゴリ	Transactions of JWRI / Vol.36 No.2 (2007-12)

資源タイプ	紀要論文
ローカル資源タイプ	紀要論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	Transactions of JWRI. 2007, 36(2), p. 51-55
DC.title	Formation of SiO₂ Scale in High-Temperature Oxidation of Wsi₂
DC.creator	Kurokawa, Kazuya
	Shibayama, Akiko
	Kobayashi, Akira
DC.publisher	大阪大学接合科学研究所
	オオサカダイガクセツゴウカガクケンキュウジョ
	Joining and Welding Research Institute, Osaka University
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2007-12
DC.subject	WSi₂
	High-Temperature Oxidation
	Evaporation of WO₃
	Structure of Oxide Scale
	SiO₂ Scale
DCTERMS.abstract	In order to clarify the relationship between evaporation of WO₃ and formation of a SiO₂ scale in WSi₂, high temperature oxidation tests of WSi₂ were carried out at the temperature range from 773 to 1773 K in air. The pronounced effect of the evaporation of WO₃ on the structure of oxide scale was found at temperatures higher than 1273 K, and a protective SiO₂ scale was formed above 1573 K. The requisite evaporation rate and the vapor pressure of WO₃ for the formation of a protective SiO₂ scale were estimated to be about 10⁻⁴kgm⁻²s⁻¹ and 10 Pa, respectively.
DC.identifier	10.18910/3766
DC.format	3766
citation_title	Formation of SiO₂ Scale in High-Temperature Oxidation of Wsi₂
citation_author	Kurokawa, Kazuya
	Shibayama, Akiko
	Kobayashi, Akira
citation_publisher	大阪大学接合科学研究所
citation_language	英語
citation_date	2007-12
citation_journal_title	Transactions of JWRI
citation_volume	36
citation_issue	2
citation_firstpage	51
citation_lastpage	55
citation_public_url	https://hdl.handle.net/11094/3766
citation_doi_detail	10.18910/3766
citation_doi	https://doi.org/10.18910/3766

Formation of SiO₂ Scale in High-Temperature Oxidation of Wsi₂

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