Formation of SiO₂ Scale in High-Temperature Oxidation of Wsi₂

Kurokawa, Kazuya; Shibayama, Akiko; Kobayashi, Akira

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タイトル	Formation of SiO₂ Scale in High-Temperature Oxidation of Wsi₂
著者	Kurokawa, Kazuya Kurokawa, Kazuya
	Shibayama, Akiko Shibayama, Akiko
	Kobayashi, Akira Kobayashi, Akira
キーワード等	WSi₂
	High-Temperature Oxidation
	Evaporation of WO₃
	Structure of Oxide Scale
	SiO₂ Scale
抄録	In order to clarify the relationship between evaporation of WO₃ and formation of a SiO₂ scale in WSi₂, high temperature oxidation tests of WSi₂ were carried out at the temperature range from 773 to 1773 K in air. The pronounced effect of the evaporation of WO₃ on the structure of oxide scale was found at temperatures higher than 1273 K, and a protective SiO₂ scale was formed above 1573 K. The requisite evaporation rate and the vapor pressure of WO₃ for the formation of a protective SiO₂ scale were estimated to be about 10⁻⁴kgm⁻²s⁻¹ and 10 Pa, respectively.
公開者	大阪大学接合科学研究所
公開者の別表記	Joining and Welding Research Institute, Osaka University
公開者 (ヨミ)	オオサカダイガクセツゴウカガクケンキュウジョ
掲載誌名	Transactions of JWRI
巻	36
号	2
開始ページ	51
終了ページ	55
刊行年月	2007-12
ISSN	03874508
NCID	AA00867058
URL	http://hdl.handle.net/11094/3766
言語	英語

著者版フラグ	publisher
NII資源タイプ	紀要論文
ローカル資源タイプ	紀要論文
dcmi資源タイプ	text
DCTERMS.bibliographicCitation	Transactions of JWRI.36(2) P.51-P.55
DC.title	Formation of SiO₂ Scale in High-Temperature Oxidation of Wsi₂
DC.creator	Kurokawa, Kazuya
	Shibayama, Akiko
	Kobayashi, Akira
DC.publisher	大阪大学接合科学研究所
DC.language" scheme="DCTERMS.RFC1766	英語
DCTERMS.issued" scheme="DCTERMS.W3CDTF	2007-12
DC.identifier" scheme="DCTERMS.URI	http://hdl.handle.net/11094/3766
DC.subject	WSi₂
	High-Temperature Oxidation
	Evaporation of WO₃
	Structure of Oxide Scale
	SiO₂ Scale
DCTERMS.abstract	In order to clarify the relationship between evaporation of WO₃ and formation of a SiO₂ scale in WSi₂, high temperature oxidation tests of WSi₂ were carried out at the temperature range from 773 to 1773 K in air. The pronounced effect of the evaporation of WO₃ on the structure of oxide scale was found at temperatures higher than 1273 K, and a protective SiO₂ scale was formed above 1573 K. The requisite evaporation rate and the vapor pressure of WO₃ for the formation of a protective SiO₂ scale were estimated to be about 10⁻⁴kgm⁻²s⁻¹ and 10 Pa, respectively.
citation_title	Formation of SiO₂ Scale in High-Temperature Oxidation of Wsi₂
citation_author	Kurokawa, Kazuya
	Shibayama, Akiko
	Kobayashi, Akira
citation_publisher	大阪大学接合科学研究所
citation_language	英語
citation_date	2007-12
citation_journal_title	Transactions of JWRI
citation_volume	36
citation_issue	2
citation_firstpage	51
citation_lastpage	55
citation_issn	03874508
citation_public_url	http://hdl.handle.net/11094/3766
citation_keywords	WSi₂
	High-Temperature Oxidation
	Evaporation of WO₃
	Structure of Oxide Scale
	SiO₂ Scale

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