Thickness Dependence of Furnace N2O-Oxynitridation Effects on Breakdown of Thermal Oxides

Matsuoka, Toshimasa; Taguchi, Shigenari; Taniguchi, Kenji; Hamaguchi, Chihiro; Kakimoto, Seizou; Takagi, Junkou

Thickness Dependence of Furnace N2O-Oxynitridation Effects on Breakdown of Thermal Oxides

Matsuoka, Toshimasa; Taguchi, Shigenari; Taniguchi, Kenji et al.

IEICE Transactions on Electronics, 1995, E78-C(3), 248-254

アクセス数:325件（2025-08-14 18:28 集計）

固定URL: https://hdl.handle.net/11094/51686

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タイトル	Thickness Dependence of Furnace N2O-Oxynitridation Effects on Breakdown of Thermal Oxides
著者	NRID 1000080324820 1000080324820 ORCID 0000-0003-3876-2679 0000-0003-3876-2679 researchmap permalink read0068628 read0068628 Scopus Author ID 7402741552 7402741552 著者名 Matsuoka, Toshimasa
	著者名 Taguchi, Shigenari
	NRID 1000020192180 1000020192180 著者名 Taniguchi, Kenji
	NRID 1000040029004 1000040029004 著者名 Hamaguchi, Chihiro
	著者名 Kakimoto, Seizou
	著者名 Takagi, Junkou
キーワード等	N_2O-oxynitridation
	charge-to-breakdown
	thin dielectrics
	MOS structure
	dielectric reliability
抄録	Thickness dependence of breakdown properties in control and N_2O-Oxynitrided oxides was investigated. Nitrogen atoms piled up at the Si/SiO_2 interface increase charge-to-breakdown (QBD) under substrate injection conditions for oxide thickness below 10 nm, while no meaningful improvement is observed above 10 nm. This thickness dependence is explained by the fact that N_2O-oxynitridation reduces oxide defects near the Si/SiO_2 interface. N_2O-oxynitridation of the oxides reduces the number of neutral electron traps due to the chemical reaction of oxide defect with nitrogen atoms. Electron trapping of N_2O-oxynitrided oxides is significantly suppressed; the reduction of electron trapping events into neutral electron traps increases QBD under substrate injection. On the other hand, under gate injection, N_2O-oxynitrided oxides show low rate of hole trapping during the initial stress period. However, in heavily injected condition, electron trapping is not suppressed, resulting in little improvement of QBD. In addition, the control and N_2O-oxynitrided oxides show quite similar dependence of QBD on stress current density, which is related primarily to the carrier transport phenomena (tunneling, traveling, impact ionization and hole injection).
出版者	電子情報通信学会
	The Institute of Electronics, Information and Communication Engineers
	デンシ　ジョウホウ　ツウシン　ガッカイ
収録物名	IEICE Transactions on Electronics
巻(号)	E78-C(3)
ページ	248-254
刊行年月	1995-03
言語	英語
ハンドルURL	https://hdl.handle.net/11094/51686
PISSN	09168516
NCID	AA10826261
関連情報 (references)	URI https://search.ieice.org/
アクセス権	open access
権利情報	copyright©1995 IEICE
出版タイプ	Version of Record
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	IEICE Transactions on Electronics. 1995, E78-C(3), p. 248-254
DC.title	Thickness Dependence of Furnace N2O-Oxynitridation Effects on Breakdown of Thermal Oxides
DC.creator	Matsuoka, Toshimasa
	Taguchi, Shigenari
	Taniguchi, Kenji
	Hamaguchi, Chihiro
	Kakimoto, Seizou
	Takagi, Junkou
DC.publisher	電子情報通信学会
	The Institute of Electronics, Information and Communication Engineers
	デンシ　ジョウホウ　ツウシン　ガッカイ
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	1995-03
DC.relation' scheme='DCTERMS.URI	https://search.ieice.org/
DC.subject	N_2O-oxynitridation
	charge-to-breakdown
	thin dielectrics
	MOS structure
	dielectric reliability
DCTERMS.abstract	Thickness dependence of breakdown properties in control and N_2O-Oxynitrided oxides was investigated. Nitrogen atoms piled up at the Si/SiO_2 interface increase charge-to-breakdown (QBD) under substrate injection conditions for oxide thickness below 10 nm, while no meaningful improvement is observed above 10 nm. This thickness dependence is explained by the fact that N_2O-oxynitridation reduces oxide defects near the Si/SiO_2 interface. N_2O-oxynitridation of the oxides reduces the number of neutral electron traps due to the chemical reaction of oxide defect with nitrogen atoms. Electron trapping of N_2O-oxynitrided oxides is significantly suppressed; the reduction of electron trapping events into neutral electron traps increases QBD under substrate injection. On the other hand, under gate injection, N_2O-oxynitrided oxides show low rate of hole trapping during the initial stress period. However, in heavily injected condition, electron trapping is not suppressed, resulting in little improvement of QBD. In addition, the control and N_2O-oxynitrided oxides show quite similar dependence of QBD on stress current density, which is related primarily to the carrier transport phenomena (tunneling, traveling, impact ionization and hole injection).
DC.rights	copyright©1995 IEICE
DC.format	51686
citation_title	Thickness Dependence of Furnace N2O-Oxynitridation Effects on Breakdown of Thermal Oxides
citation_author	Matsuoka, Toshimasa
	Taguchi, Shigenari
	Taniguchi, Kenji
	Hamaguchi, Chihiro
	Kakimoto, Seizou
	Takagi, Junkou
citation_publisher	電子情報通信学会
citation_language	英語
citation_date	1995-03
citation_journal_title	IEICE Transactions on Electronics
citation_volume	E78-C
citation_issue	3
citation_firstpage	248
citation_lastpage	254
citation_public_url	https://hdl.handle.net/11094/51686
citation_abstract_html_url	https://search.ieice.org/

Thickness Dependence of Furnace N2O-Oxynitridation Effects on Breakdown of Thermal Oxides

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