Drain Current Response Delay of FD-SOI MOSFETs in RF Operation

Shimizu, Yoshiyuki; Kim, Gue Chol; Murakami, Bunsei; Ueda, Keisuke; Utsurogi, Yoshihiro; Cha, Sungwoo; Matsuoka, Toshimasa; Taniguchi, Kenji

doi:https://doi.org/10.1587/elex.1.518

Drain Current Response Delay of FD-SOI MOSFETs in RF Operation

Shimizu, Yoshiyuki; Kim, Gue Chol; Murakami, Bunsei et al.

IEICE Electronics Express, 2004, 1(16), 518-522

アクセス数:1,189件（2025-08-15 06:48 集計）

固定URL: https://hdl.handle.net/11094/51695

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タイトル	Drain Current Response Delay of FD-SOI MOSFETs in RF Operation
著者	著者名 Shimizu, Yoshiyuki
	著者名 Kim, Gue Chol
	著者名 Murakami, Bunsei
	著者名 Ueda, Keisuke
	著者名 Utsurogi, Yoshihiro
	著者名 Cha, Sungwoo
	NRID 1000080324820 1000080324820 ORCID 0000-0003-3876-2679 0000-0003-3876-2679 researchmap permalink read0068628 read0068628 Scopus Author ID 7402741552 7402741552 著者名 Matsuoka, Toshimasa
	NRID 1000020192180 1000020192180 著者名 Taniguchi, Kenji
キーワード等	FD-SOI
	MOSFET
	RF
	modeling
	drain current response delay
抄録	We investigated the frequency dependences of Y22 of FD-SOI MOSFETs, in which the drain current response delay is observed for the first time. Short channel FD-SOI devices operating in linear region show significant drain current response delay. It is confirmed that FD-SOI MOSFET's RF behavior can be well reproduced with the proposed model including the drain current response delay.
出版者	電子情報通信学会
	The Institute of Electronics, Information and Communication Engineers
	デンシ　ジョウホウ　ツウシン　ガッカイ
収録物名	IEICE Electronics Express
巻(号)	1(16)
ページ	518-522
刊行年月	2004-11
言語	英語
ハンドルURL	https://hdl.handle.net/11094/51695
eISSN	13492543
関連情報 (isIdenticalTo)	DOI (出版社版) https://doi.org/10.1587/elex.1.518
アクセス権	open access
権利情報	copyright©2004 IEICE
出版タイプ	Version of Record
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	IEICE Electronics Express. 2004, 1(16), p. 518-522
DC.title	Drain Current Response Delay of FD-SOI MOSFETs in RF Operation
DC.creator	Shimizu, Yoshiyuki
	Kim, Gue Chol
	Murakami, Bunsei
	Ueda, Keisuke
	Utsurogi, Yoshihiro
	Cha, Sungwoo
	Matsuoka, Toshimasa
	Taniguchi, Kenji
DC.publisher	電子情報通信学会
	The Institute of Electronics, Information and Communication Engineers
	デンシ　ジョウホウ　ツウシン　ガッカイ
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2004-11
DC.identifier	https://doi.org/10.1587/elex.1.518
DC.subject	FD-SOI
	MOSFET
	RF
	modeling
	drain current response delay
DCTERMS.abstract	We investigated the frequency dependences of Y22 of FD-SOI MOSFETs, in which the drain current response delay is observed for the first time. Short channel FD-SOI devices operating in linear region show significant drain current response delay. It is confirmed that FD-SOI MOSFET's RF behavior can be well reproduced with the proposed model including the drain current response delay.
DC.rights	copyright©2004 IEICE
DC.format	51695
citation_title	Drain Current Response Delay of FD-SOI MOSFETs in RF Operation
citation_author	Shimizu, Yoshiyuki
	Kim, Gue Chol
	Murakami, Bunsei
	Ueda, Keisuke
	Utsurogi, Yoshihiro
	Cha, Sungwoo
	Matsuoka, Toshimasa
	Taniguchi, Kenji
citation_publisher	電子情報通信学会
citation_language	英語
citation_date	2004-11
citation_journal_title	IEICE Electronics Express
citation_volume	1
citation_issue	16
citation_firstpage	518
citation_lastpage	522
citation_doi	https://doi.org/10.1587/elex.1.518
citation_public_url	https://hdl.handle.net/11094/51695

Drain Current Response Delay of FD-SOI MOSFETs in RF Operation

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