Zone-folding effect in short-period (GaAs)_n/(AlAs)_n superlattices with n in the range 3–15

Nakazawa, T; Ohya, T; Hamaguchi, C; Kato, H; Matsuoka, T; Taniguchi, K; Watanabe, Y

Zone-folding effect in short-period (GaAs)_n/(AlAs)_n superlattices with n in the range 3–15

Nakazawa, T; Ohya, T; Hamaguchi, C et al.

Physical Review B, 1991, B43(14), 11798-11805

アクセス数:1,195件（2026-01-19 18:24 集計）

固定URL: https://hdl.handle.net/11094/51711

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タイトル	Zone-folding effect in short-period (GaAs)_n/(AlAs)_n superlattices with n in the range 3–15
著者	NRID 1000030175492 1000030175492 著者名 Nakazawa, T
	著者名 Ohya, T
	NRID 1000040029004 1000040029004 著者名 Hamaguchi, C
	著者名 Kato, H
	著者名 Matsuoka, T
	NRID 1000020192180 1000020192180 著者名 Taniguchi, K
	NRID 1000050079662 1000050079662 著者名 Watanabe, Y
抄録	Photoreflectance and photoluminescence measurements are carried out in the temperature range from 25 to 275 K to clarify the optical properties of (GaAs)_n /(AlAs)_n (n=3–15) short-period superlattices. Our primary interest is in the zone-folded weak transition. Weak signals of photoreflectance associated with the critical point of the pseudodirect transition, a weakly allowed direct transition arising from the zone-folding effect, have been found below the main signals associated with the direct allowed transitions for (GaAs)_n/(AlAs)_n superlattices with n<12 at 200 K. Photoluminescence peaks appear at photon energies corresponding to the critical points of this weak structure. This assignment is supported by the temperature dependence of the photoluminescence intensity, which gives the transition probability ratio of the allowed direct-to-pseudodirect transition of about 10^4. Energy-band calculations are performed by using the empirical sp^3 tight-binding method including second-nearest-neighbor interactions, where the tight-binding parameters are determined to fit the effective masses of the conduction band at the X point. These calculations show the existence of a weakly allowed direct transition below the strongly allowed direct transition edge in (GaAs)_n /(AlAs)_n superlattices with n<12, which shows a good agreement with the present experimental results. These results strongly suggest that the observed weak structures in the photoreflectance arise from the pseudodirect transition, indicating that the conduction band reflects the nature of the zone-folding effect (X_z -like state at the Γ point).
収録物名	Physical Review B
巻(号)	B43(14)
ページ	11798-11805
刊行年月	1991-05
言語	英語
ハンドルURL	https://hdl.handle.net/11094/51711
PISSN	01631829
NCID	AA00362255
アクセス権	open access
権利情報	Copyright (1991) by the American Physical Society.
出版タイプ	Version of Record
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	Physical Review B. 1991, B43(14), p. 11798-11805
DC.title	Zone-folding effect in short-period (GaAs)_n/(AlAs)_n superlattices with n in the range 3–15
DC.creator	Nakazawa, T
	Ohya, T
	Hamaguchi, C
	Kato, H
	Matsuoka, T
	Taniguchi, K
	Watanabe, Y
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	1991-05
DCTERMS.abstract	Photoreflectance and photoluminescence measurements are carried out in the temperature range from 25 to 275 K to clarify the optical properties of (GaAs)_n /(AlAs)_n (n=3–15) short-period superlattices. Our primary interest is in the zone-folded weak transition. Weak signals of photoreflectance associated with the critical point of the pseudodirect transition, a weakly allowed direct transition arising from the zone-folding effect, have been found below the main signals associated with the direct allowed transitions for (GaAs)_n/(AlAs)_n superlattices with n<12 at 200 K. Photoluminescence peaks appear at photon energies corresponding to the critical points of this weak structure. This assignment is supported by the temperature dependence of the photoluminescence intensity, which gives the transition probability ratio of the allowed direct-to-pseudodirect transition of about 10^4. Energy-band calculations are performed by using the empirical sp^3 tight-binding method including second-nearest-neighbor interactions, where the tight-binding parameters are determined to fit the effective masses of the conduction band at the X point. These calculations show the existence of a weakly allowed direct transition below the strongly allowed direct transition edge in (GaAs)_n /(AlAs)_n superlattices with n<12, which shows a good agreement with the present experimental results. These results strongly suggest that the observed weak structures in the photoreflectance arise from the pseudodirect transition, indicating that the conduction band reflects the nature of the zone-folding effect (X_z -like state at the Γ point).
DC.rights	Copyright (1991) by the American Physical Society.
DC.format	51711
citation_title	Zone-folding effect in short-period (GaAs)_n/(AlAs)_n superlattices with n in the range 3–15
citation_author	Nakazawa, T
	Ohya, T
	Hamaguchi, C
	Kato, H
	Matsuoka, T
	Taniguchi, K
	Watanabe, Y
citation_language	英語
citation_date	1991-05
citation_journal_title	Physical Review B
citation_volume	B43
citation_issue	14
citation_firstpage	11798
citation_lastpage	11805
citation_public_url	https://hdl.handle.net/11094/51711

Zone-folding effect in short-period (GaAs)_n/(AlAs)_n superlattices with n in the range 3–15

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