Temperature dependence of energy gap of (GaAs)_n/(AlAs)_n Superlattices

Nakazawa, Takeshi; Matsuoka, Toshimasa; Ohya, Tomoki; Taniguchi, Kenji; Hamaguchi, Chihiro; Kato, Hiroshi; Watanabe, Yasutaka

doi:https://doi.org/10.1117/12.20852

Temperature dependence of energy gap of (GaAs)_n/(AlAs)_n Superlattices

Nakazawa, Takeshi; Matsuoka, Toshimasa; Ohya, Tomoki et al.

Proceedings of SPIE (1286) : International Conference on Modulation Spectroscopy, 19-21 March 1990, San Diego, California, 1990, 244-254

アクセス数:837件（2025-08-14 20:53 集計）

固定URL: https://hdl.handle.net/11094/51724

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タイトル	Temperature dependence of energy gap of (GaAs)_n/(AlAs)_n Superlattices
著者	著者名 Nakazawa, Takeshi
	NRID 1000080324820 1000080324820 ORCID 0000-0003-3876-2679 0000-0003-3876-2679 researchmap permalink read0068628 read0068628 Scopus Author ID 7402741552 7402741552 著者名 Matsuoka, Toshimasa
	著者名 Ohya, Tomoki
	NRID 1000020192180 1000020192180 著者名 Taniguchi, Kenji
	NRID 1000040029004 1000040029004 著者名 Hamaguchi, Chihiro
	著者名 Kato, Hiroshi
	NRID 1000050079662 1000050079662 著者名 Watanabe, Yasutaka
抄録	Photoreflectance and photoluminescence experiments are carrIed out in (GaAs)/(AlAs) (n = 1-15) in the temperature range from 25 to 275 K. Weak signals of photoreflectance associated with the critical point of the pseudodirect transition, weakly allowed direct transition arising from the zone-folding effect, have been found as well as main signals associated with the direct allowed transitions. This assignment is supported by the temperature dependence of the photoluminescence intensity, which gives the transition probability ratio of the direct allowed to pseudodirect transition about 102. Temperature dependence of the critical point energies and luminescence peak energies shows a similar behavior to bulk semiconductors. These observations show also that the monolayer number n for which the crossover of direct and pseudodirect transitions occurs depends on temperature. In addition the broadening parameters determined from photoreflectance spectra are found to be almost independent of temperature and depend on the monolayer number n, which may be explained in terms of broadening induced by the layer number fluctuation.
出版者	SPIE
収録物名	Proceedings of SPIE (1286) : International Conference on Modulation Spectroscopy, 19-21 March 1990, San Diego, California
ページ	244-254
刊行年月	1990-08-01
言語	英語
ハンドルURL	https://hdl.handle.net/11094/51724
関連情報 (isPartOf)	ISBN 9780819403377
関連情報 (isIdenticalTo)	DOI (出版社版) https://doi.org/10.1117/12.20852
アクセス権	open access
権利情報	Copyright 1990 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
出版タイプ	Version of Record
カテゴリ	単行書 Book

資源タイプ	図書
ローカル資源タイプ	単行書
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	Proceedings of SPIE (1286) : International Conference on Modulation Spectroscopy, 19-21 March 1990, San Diego, California. 1990, p. 244-254
DC.title	Temperature dependence of energy gap of (GaAs)_n/(AlAs)_n Superlattices
DC.creator	Nakazawa, Takeshi
	Matsuoka, Toshimasa
	Ohya, Tomoki
	Taniguchi, Kenji
	Hamaguchi, Chihiro
	Kato, Hiroshi
	Watanabe, Yasutaka
DC.publisher	SPIE
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	1990-08-01
DC.identifier	https://doi.org/10.1117/12.20852
DCTERMS.abstract	Photoreflectance and photoluminescence experiments are carrIed out in (GaAs)/(AlAs) (n = 1-15) in the temperature range from 25 to 275 K. Weak signals of photoreflectance associated with the critical point of the pseudodirect transition, weakly allowed direct transition arising from the zone-folding effect, have been found as well as main signals associated with the direct allowed transitions. This assignment is supported by the temperature dependence of the photoluminescence intensity, which gives the transition probability ratio of the direct allowed to pseudodirect transition about 102. Temperature dependence of the critical point energies and luminescence peak energies shows a similar behavior to bulk semiconductors. These observations show also that the monolayer number n for which the crossover of direct and pseudodirect transitions occurs depends on temperature. In addition the broadening parameters determined from photoreflectance spectra are found to be almost independent of temperature and depend on the monolayer number n, which may be explained in terms of broadening induced by the layer number fluctuation.
DC.rights	Copyright 1990 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
DC.format	51724
citation_title	Temperature dependence of energy gap of (GaAs)_n/(AlAs)_n Superlattices
citation_author	Nakazawa, Takeshi
	Matsuoka, Toshimasa
	Ohya, Tomoki
	Taniguchi, Kenji
	Hamaguchi, Chihiro
	Kato, Hiroshi
	Watanabe, Yasutaka
citation_publisher	SPIE
citation_language	英語
citation_date	1990-08-01
citation_journal_title	Proceedings of SPIE (1286) : International Conference on Modulation Spectroscopy, 19-21 March 1990, San Diego, California
citation_firstpage	244
citation_lastpage	254
citation_doi	https://doi.org/10.1117/12.20852
citation_public_url	https://hdl.handle.net/11094/51724

Temperature dependence of energy gap of (GaAs)_n/(AlAs)_n Superlattices

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