Direct and indirect Transitions in (GaAs)_n/(AlAs)_n Superlattices with n=1-15

Hamaguchi, Chihiro; Nakazawa, Takeshi; Matsuoka, Toshimasa; Ohya, Tomoki; Taniguchi, Kenji; Fujimoto, Hidetoshi; Imanishi, Kenji; Kato, Hiroshi; Watanabe, Yasutaka

doi:https://doi.org/10.1117/12.20856

Direct and indirect Transitions in (GaAs)_n/(AlAs)_n Superlattices with n=1-15

Hamaguchi, Chihiro; Nakazawa, Takeshi; Matsuoka, Toshimasa et al.

Proceedings of SPIE (1286) : International Conference on Modulation Spectroscopy, 19-21 March 1990, San Diego, California, 1990, 280-290

アクセス数:912件（2025-08-15 06:48 集計）

固定URL: https://hdl.handle.net/11094/51725

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タイトル	Direct and indirect Transitions in (GaAs)_n/(AlAs)_n Superlattices with n=1-15
著者	NRID 1000040029004 1000040029004 著者名 Hamaguchi, Chihiro
	著者名 Nakazawa, Takeshi
	NRID 1000080324820 1000080324820 ORCID 0000-0003-3876-2679 0000-0003-3876-2679 researchmap permalink read0068628 read0068628 Scopus Author ID 7402741552 7402741552 著者名 Matsuoka, Toshimasa
	著者名 Ohya, Tomoki
	NRID 1000020192180 1000020192180 著者名 Taniguchi, Kenji
	著者名 Fujimoto, Hidetoshi
	著者名 Imanishi, Kenji
	著者名 Kato, Hiroshi
	NRID 1000050079662 1000050079662 著者名 Watanabe, Yasutaka
抄録	Photoreflectance and photoluminescence measurements are carried out to clarify optical properties of (GaAs)/(AlAs) (n = 1-15) short-period superlattices, placing main interest in the crossover of direct-indirect transition and zone-folded weak transition. Photoreflectance spectra of (GaAs)/(A1As) with n < 10 exhibit a weak structure below the main (strong) structure. Photoluminescence peaks appear at the photon energies corresponding to the critical points of these weak and strong structures. Energy band calculations are performed by using the empirical tight-binding method. Calculations of momentum matrix elements between the top valence band and lowest three conduction bands at the I' point show an existence of weakly allowed direct transition below the strongly allowed direct transition edge in (GaAs)/(AlAs)with n < 5. These results strongly suggest that the observed weak structures in the photoreflectance arise from the weakly allowed direct transition, indicating that the conduction band reflects the nature of the zone-folding effect (Xi).
出版者	SPIE
収録物名	Proceedings of SPIE (1286) : International Conference on Modulation Spectroscopy, 19-21 March 1990, San Diego, California
ページ	280-290
刊行年月	1990-08-01
言語	英語
ハンドルURL	https://hdl.handle.net/11094/51725
関連情報 (isPartOf)	ISBN 9780819403377
関連情報 (isIdenticalTo)	DOI (出版社版) https://doi.org/10.1117/12.20856
アクセス権	open access
権利情報	Copyright 1990 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
出版タイプ	Version of Record
カテゴリ	単行書 Book

資源タイプ	図書
ローカル資源タイプ	単行書
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	Proceedings of SPIE (1286) : International Conference on Modulation Spectroscopy, 19-21 March 1990, San Diego, California. 1990, p. 280-290
DC.title	Direct and indirect Transitions in (GaAs)_n/(AlAs)_n Superlattices with n=1-15
DC.creator	Hamaguchi, Chihiro
	Nakazawa, Takeshi
	Matsuoka, Toshimasa
	Ohya, Tomoki
	Taniguchi, Kenji
	Fujimoto, Hidetoshi
	Imanishi, Kenji
	Kato, Hiroshi
	Watanabe, Yasutaka
DC.publisher	SPIE
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	1990-08-01
DC.identifier	https://doi.org/10.1117/12.20856
DCTERMS.abstract	Photoreflectance and photoluminescence measurements are carried out to clarify optical properties of (GaAs)/(AlAs) (n = 1-15) short-period superlattices, placing main interest in the crossover of direct-indirect transition and zone-folded weak transition. Photoreflectance spectra of (GaAs)/(A1As) with n < 10 exhibit a weak structure below the main (strong) structure. Photoluminescence peaks appear at the photon energies corresponding to the critical points of these weak and strong structures. Energy band calculations are performed by using the empirical tight-binding method. Calculations of momentum matrix elements between the top valence band and lowest three conduction bands at the I' point show an existence of weakly allowed direct transition below the strongly allowed direct transition edge in (GaAs)/(AlAs)with n < 5. These results strongly suggest that the observed weak structures in the photoreflectance arise from the weakly allowed direct transition, indicating that the conduction band reflects the nature of the zone-folding effect (Xi).
DC.rights	Copyright 1990 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
DC.format	51725
citation_title	Direct and indirect Transitions in (GaAs)_n/(AlAs)_n Superlattices with n=1-15
citation_author	Hamaguchi, Chihiro
	Nakazawa, Takeshi
	Matsuoka, Toshimasa
	Ohya, Tomoki
	Taniguchi, Kenji
	Fujimoto, Hidetoshi
	Imanishi, Kenji
	Kato, Hiroshi
	Watanabe, Yasutaka
citation_publisher	SPIE
citation_language	英語
citation_date	1990-08-01
citation_journal_title	Proceedings of SPIE (1286) : International Conference on Modulation Spectroscopy, 19-21 March 1990, San Diego, California
citation_firstpage	280
citation_lastpage	290
citation_doi	https://doi.org/10.1117/12.20856
citation_public_url	https://hdl.handle.net/11094/51725

Direct and indirect Transitions in (GaAs)_n/(AlAs)_n Superlattices with n=1-15

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