Accurate Extraction of Effective Gate Resistance in RF MOSFET

Jo, Ikkyun; Matsuoka, Toshimasa

Circuits and Systems, 2015, 6(5), 143-151

アクセス数:668件（2025-08-14 22:13 集計）

固定URL: https://hdl.handle.net/11094/51764

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論文情報

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タイトル
Accurate Extraction of Effective Gate Resistance in RF MOSFET
著者
著者名
Jo, Ikkyun
NRID
1000080324820 1000080324820
ORCID
0000-0003-3876-2679 0000-0003-3876-2679
researchmap permalink
read0068628 read0068628
Scopus Author ID
7402741552 7402741552
著者名
Matsuoka, Toshimasa
キーワード等
MOSFET
NQS Effect
Gate Electrode Resistance
Elmore Constant
抄録
This paper describes the gate electrode resistance of MOSFET and non-quasi-static (NQS) effect for RF operation. The vertical current paths between the silicide layer and poly-silicon are considered in the gate electrode. The vertical current paths are not effective in long-channel devices, but become more significant in short-channel devices. The gate resistance including vertical current paths can reproduce the practical RF characteristics well. By careful separation of the above gate electrode resistance and the NQS effect, the small-signal gate-source admittance can be analyzed with 130-nm CMOS process. Elmore constant (κ) of the NQS gate-source resistance is about five for long-channel devices, while it decreases down to about three for short-channel devices.
出版者
Scientific Research Publishing Inc.
収録物名
Circuits and Systems
巻(号)
6(5)
ページ
143-151
刊行年月
2015-05-22
言語
英語
ハンドルURL
https://hdl.handle.net/11094/51764
PISSN
21531285
eISSN
21531293
関連情報 (isIdenticalTo)
DOI (出版社版)
https://doi.org/10.4236/cs.2015.65015
アクセス権
open access
権利情報
© 2015 by authors and Scientific Research Publishing Inc. This article is licensed under a Creative Commons Attribution 4.0 International License.
出版タイプ
Version of Record
カテゴリ
学術雑誌論文 Journal Article