Microstructures Observation of N-type GaN Contacts and the Electrical Properties

Kimura, kota; Maeda, Masakatsu; Halil Aiman bin Mohd; Takahashi, Yasuo

このアイテムのアクセス数:23件（2018-06-21 12:06 集計）

このアイテムへのリンクには次のURLをご利用ください:http://hdl.handle.net/11094/57265

閲覧可能ファイル

ファイル	フォーマット	サイズ	閲覧回数	説明
jwri44_1-019	pdf	558 KB	21

論文情報

タイトル	Microstructures Observation of N-type GaN Contacts and the Electrical Properties
著者	Kimura, kota Kimura, kota
	Maeda, Masakatsu Maeda, Masakatsu
	Halil Aiman bin Mohd Halil Aiman bin Mohd
	Takahashi, Yasuo Takahashi, Yasuo
キーワード等	N-type gallium nitride
	Ohmic contacts
	Schottky barrier
	N-vacancies
	Microstructures
	Electrial properties
抄録	In the present study, to increase the carrier densitｙ of n-GaN, the formation of N-vacancies are attempted by interfacial reaction and by Ar ion irradiation. The microstructure and electrical properties after the interfacial reaction and Ar ion irraddiation were then analyzed by TEM and DC conduction tests. The TEM result indicates that Ti2N is formed adjacent to the GaN substrate after the desposition of Ti film. theTi2N formation indicated that a huge amount of N-vacancies is formed within the subsurface of GaN. The electrical conduction profile reveals that even with the formation of Ti2N, ohmic conduction ia achieved. It is likely due to the formation of N-vacancies by interfacial reaction to form Ti2N and Ar ion irradiation. By prolonging the Ar ion irradiation, further improvement of electrical conductivity is achieved. This result indicated that the amount of N-Vacancies formation within the GaN subsurface are depending to the Ar ion irradiation times. Howevers, by performing Ar ion irradiation for 3600s, no futher improvement is achieve. It is likely due to phase transformation from GaN to Ga-rich phase at the GaN subsurface. The Ga-rich phase enhance the Ga-Ti compound, which increase the height and width of the Schottky barrier, thus reduce th electrical conductivity.
公開者	大阪大学接合科学研究所
公開者の別表記	Joining and Welding Research Institute, Osaka University
公開者 (ヨミ)	オオサカダイガクセツゴウカガクケンキュウジョ
掲載誌名	Transactions of JWRI
巻	44
号	1
開始ページ	19
終了ページ	22
刊行年月	2015-06
ISSN	03874508
NCID	AA00867058
URL	http://hdl.handle.net/11094/57265
言語	英語

著者版フラグ	publisher
NII資源タイプ	紀要論文
ローカル資源タイプ	紀要論文
dcmi資源タイプ	text
DCTERMS.bibliographicCitation	Transactions of JWRI.44(1) P.19-P.22
DC.title	Microstructures Observation of N-type GaN Contacts and the Electrical Properties
DC.creator	Kimura, kota
	Maeda, Masakatsu
	Halil Aiman bin Mohd
	Takahashi, Yasuo
DC.publisher	大阪大学接合科学研究所
DC.language" scheme="DCTERMS.RFC1766	英語
DCTERMS.issued" scheme="DCTERMS.W3CDTF	2015-06
DC.identifier" scheme="DCTERMS.URI	http://hdl.handle.net/11094/57265
DC.subject	N-type gallium nitride
	Ohmic contacts
	Schottky barrier
	N-vacancies
	Microstructures
	Electrial properties
DCTERMS.abstract	In the present study, to increase the carrier densitｙ of n-GaN, the formation of N-vacancies are attempted by interfacial reaction and by Ar ion irradiation. The microstructure and electrical properties after the interfacial reaction and Ar ion irraddiation were then analyzed by TEM and DC conduction tests. The TEM result indicates that Ti2N is formed adjacent to the GaN substrate after the desposition of Ti film. theTi2N formation indicated that a huge amount of N-vacancies is formed within the subsurface of GaN. The electrical conduction profile reveals that even with the formation of Ti2N, ohmic conduction ia achieved. It is likely due to the formation of N-vacancies by interfacial reaction to form Ti2N and Ar ion irradiation. By prolonging the Ar ion irradiation, further improvement of electrical conductivity is achieved. This result indicated that the amount of N-Vacancies formation within the GaN subsurface are depending to the Ar ion irradiation times. Howevers, by performing Ar ion irradiation for 3600s, no futher improvement is achieve. It is likely due to phase transformation from GaN to Ga-rich phase at the GaN subsurface. The Ga-rich phase enhance the Ga-Ti compound, which increase the height and width of the Schottky barrier, thus reduce th electrical conductivity.
citation_title	Microstructures Observation of N-type GaN Contacts and the Electrical Properties
citation_author	Kimura, kota
	Maeda, Masakatsu
	Halil Aiman bin Mohd
	Takahashi, Yasuo
citation_publisher	大阪大学接合科学研究所
citation_language	英語
citation_date	2015-06
citation_journal_title	Transactions of JWRI
citation_volume	44
citation_issue	1
citation_firstpage	19
citation_lastpage	22
citation_issn	03874508
citation_public_url	http://hdl.handle.net/11094/57265
citation_keywords	N-type gallium nitride
	Ohmic contacts
	Schottky barrier
	N-vacancies
	Microstructures
	Electrial properties

閲覧可能ファイル

論文情報

論文詳細を表示