学術雑誌論文

本学関連学会

text

電気材料技術雑誌. 2015, 24(1), p. 16-23

日本語

text

2015-12-10

Electrical characteristics of solution-processed top-gate organic field-effect transistors based on different polycrystalline and amorphous organic semiconductors are systematically investigated to show that the field-effect transistors with top-gate configuration exhibit high performance electrical characteristics. The top-gate organic transistors based on typical polycrystalline polymer semiconductors exhibit high field-effect mobility irrespective of their side chain lengths and dielectric constants of gate dielectrics. This reveals that highly ordered structures are spontaneously formed at the surface of solution-processed polymer thin films, which serve as active channel of top-gate transistors. The top-gate organic transistors with different polycrystalline and amorphous organic semiconductors exhibit extremely high operational stability as compared with hydrogenated amorphous silicon thin film transistors. These results clearly show that organic field-effect transistors with top-gate configuration play an important role in the development of high-performance applications such as integrated circuits, backplane of displays, and radio-frequency identification tags using a solution process.

76095

塗布プロセスにより作製した高性能トップゲート型有機薄膜トランジスタ

電気材料技術懇談会

日本語

2015-12-10

電気材料技術雑誌

24

1

16

23

https://hdl.handle.net/11094/76095