半導体用ホールパターン縮小技術 : ArF対応RELACS

寺井, 護; 豊島, 利之; 熊田, 輝彦; 長江, 偉

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タイトル	半導体用ホールパターン縮小技術 : ArF対応RELACS
別タイトル	Hall pattern Shrink technology for a semiconductor : RELACS Technology for ArF Lithography
タイトル (ヨミ)	ハンドウタイ　ヨウ　ホール　パターン　シュクショウ　ギジュツ　ArF　タイオウ　RELACS
著者	寺井, 護寺井, 護
	豊島, 利之豊島, 利之
	熊田, 輝彦熊田, 輝彦
	長江, 偉長江, 偉
著者の別表記	Terai, Mamoru
	Toyoshima, Toshiyuki
	Kumada, Teruhiko
	Nagae, Suguru
キーワード等	RELACSTM
	Shrink Technology
	Chemically Amplified Resist
	Photoacid Generator
	contact hole pattern
	193nm lithography
抄録	A chemical shrink technology, RELACS™ (Resolution Enhancement Lithography Assisted by Chemical Shrink), utilizes the cross linking reaction catalyzed by the acid component existing in a predefined resist patteml, 2. This "RELACS™" process is a hole shrinking procedure that includes simple coating, baking, and rinsing applied after conventional photolithography. Our target is realize of under 90nm pattern formation TM TM by using new RELACS™ for ArF resist. At present, RELACS™ process is introduced to mass production of KrF lithography by using AZRR200 (Product name of Clariant) mainly. Then first of all we reported process TM @ @ performance of conventional RELACS™ material, AZ R200, with ArF resist. However AZ R200 does not show satisfactory shrinkage on ArF resist. Thereupon, we started on the development of new RELACS™ TM corresponding to ArF resist. As the result, we developed new RELACS™ material including new material. It was found that new matrerial is able to improve reactivity of RELACS™ with ArF-resist. By using this new RELACST™, It is Realized under 90nm pattern formation with ArF-Ex Lithography.
公開者	電気材料技術懇談会
公開者 (ヨミ)	デンキ　ザイリョウ　ギジュツ　コンダンカイ
掲載誌名	電気材料技術雑誌
巻	13
開始ページ	82
終了ページ	86
刊行年月	2004-09-25
URL	http://hdl.handle.net/11094/76782
言語	日本語
カテゴリ	本学関連学会 Related Societies
カテゴリ	電気材料技術雑誌 / 第13巻

著者版フラグ	publisher
NII資源タイプ	学術雑誌論文
ローカル資源タイプ	本学関連学会
dcmi資源タイプ	text
DCTERMS.bibliographicCitation	電気材料技術雑誌.13 P.82-P.86
DC.title	半導体用ホールパターン縮小技術 : ArF対応RELACS
DCTERMS.alternative	Hall pattern Shrink technology for a semiconductor : RELACS Technology for ArF Lithography
DC.creator	寺井, 護
	豊島, 利之
	熊田, 輝彦
	長江, 偉
DC.creator	Terai, Mamoru
	Toyoshima, Toshiyuki
	Kumada, Teruhiko
	Nagae, Suguru
DC.publisher	電気材料技術懇談会
DC.language" scheme="DCTERMS.RFC1766	日本語
DCTERMS.issued" scheme="DCTERMS.W3CDTF	2004-09-25
DC.identifier" scheme="DCTERMS.URI	http://hdl.handle.net/11094/76782
DC.subject	RELACSTM
	Shrink Technology
	Chemically Amplified Resist
	Photoacid Generator
	contact hole pattern
	193nm lithography
DCTERMS.abstract	A chemical shrink technology, RELACS™ (Resolution Enhancement Lithography Assisted by Chemical Shrink), utilizes the cross linking reaction catalyzed by the acid component existing in a predefined resist patteml, 2. This "RELACS™" process is a hole shrinking procedure that includes simple coating, baking, and rinsing applied after conventional photolithography. Our target is realize of under 90nm pattern formation TM TM by using new RELACS™ for ArF resist. At present, RELACS™ process is introduced to mass production of KrF lithography by using AZRR200 (Product name of Clariant) mainly. Then first of all we reported process TM @ @ performance of conventional RELACS™ material, AZ R200, with ArF resist. However AZ R200 does not show satisfactory shrinkage on ArF resist. Thereupon, we started on the development of new RELACS™ TM corresponding to ArF resist. As the result, we developed new RELACS™ material including new material. It was found that new matrerial is able to improve reactivity of RELACS™ with ArF-resist. By using this new RELACST™, It is Realized under 90nm pattern formation with ArF-Ex Lithography.
citation_title	半導体用ホールパターン縮小技術 : ArF対応RELACS
citation_author	寺井, 護
	豊島, 利之
	熊田, 輝彦
	長江, 偉
citation_publisher	電気材料技術懇談会
citation_language	日本語
citation_date	2004-09-25
citation_journal_title	電気材料技術雑誌
citation_volume	13
citation_firstpage	82
citation_lastpage	86
citation_public_url	http://hdl.handle.net/11094/76782
citation_keywords	RELACSTM
	Shrink Technology
	Chemically Amplified Resist
	Photoacid Generator
	contact hole pattern
	193nm lithography

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