Long-term stability of nickel-based ohmic contacts with n-type and p-type 4H-SiC in a high-temperature environment

Masunaga, Masahiro; Crescitelli, Viviana; Funaki, Tsuyoshi

doi:https://doi.org/10.35848/1347-4065/abbb1f

Long-term stability of nickel-based ohmic contacts with n-type and p-type 4H-SiC in a high-temperature environment

Masunaga, Masahiro; Crescitelli, Viviana; Funaki, Tsuyoshi

Japanese Journal of Applied Physics, 2020, 59(10), 104005

アクセス数:432件（2025-11-26 01:57 集計）

固定URL: https://hdl.handle.net/11094/78287

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タイトル	Long-term stability of nickel-based ohmic contacts with n-type and p-type 4H-SiC in a high-temperature environment
著者	著者名 Masunaga, Masahiro
	著者名 Crescitelli, Viviana
	NRID 1000020263220 1000020263220 ORCID 0000-0001-8776-5118 0000-0001-8776-5118 researchmap permalink FunakiTsuyoshi FunakiTsuyoshi Scopus Author ID 7005435048 7005435048 著者名 Funaki, Tsuyoshi
内容	This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd are not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/abbb1f.
抄録	Long-term thermal stability of specific contact resistance (ρc) in cross-bridge Kelvin resistors (CBKRs), with an Al/TiN/Ti/Ni₂Si/4H-SiC layered structure, was studied. In high-temperature-storage tests at 500 °C, ρc of p-type SiC increased after it decreased to 1/100 from its initial value; however, in high-temperature-storage tests at 300 °C, it was stable up to 1000 h. The initial decline of ρc was due to the formation of titanium-silicide alloy, whose barrier height is lower than that of the Ni₂Si phase. It was found that ρc increased when the aluminum electrode disappeared because aluminum displaced silicon in the silicon-dioxide layer. In thermal-shock tests (-40 °C/300 °C), ρc hardly changed up to 2000 cycles, and that trend was constant regardless of SiC carrier type. In both tests, almost no thermal deterioration of ρc around 300 °C was observed even in air, so it is concluded that the CBKR structure is robust enough for installation in a high-temperature environment such as a nuclear power plant under decommissioning.
出版者	IOP Publishing
収録物名	Japanese Journal of Applied Physics
巻(号)	59(10)
ページ	104005
刊行年月	2020-10
言語	英語
ハンドルURL	https://hdl.handle.net/11094/78287
PISSN	00214922
eISSN	13474065
NCID	AA12295836
関連情報 (isVersionOf)	DOI (出版社版) https://doi.org/10.35848/1347-4065/abbb1f
アクセス権	open access
権利情報	The full-text file will be made open to the public on 9 October 2021 in accordance with the publisher's policy.
権利情報	This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence.
出版タイプ	Accepted Manuscript
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	Japanese Journal of Applied Physics. 2020, 59(10), p. 104005
DC.title	Long-term stability of nickel-based ohmic contacts with n-type and p-type 4H-SiC in a high-temperature environment
DC.creator	Masunaga, Masahiro
	Crescitelli, Viviana
	Funaki, Tsuyoshi
DC.publisher	IOP Publishing
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2020-10
DC.identifier	https://doi.org/10.35848/1347-4065/abbb1f
DC.description	This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd are not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/abbb1f.
DCTERMS.abstract	Long-term thermal stability of specific contact resistance (ρc) in cross-bridge Kelvin resistors (CBKRs), with an Al/TiN/Ti/Ni₂Si/4H-SiC layered structure, was studied. In high-temperature-storage tests at 500 °C, ρc of p-type SiC increased after it decreased to 1/100 from its initial value; however, in high-temperature-storage tests at 300 °C, it was stable up to 1000 h. The initial decline of ρc was due to the formation of titanium-silicide alloy, whose barrier height is lower than that of the Ni₂Si phase. It was found that ρc increased when the aluminum electrode disappeared because aluminum displaced silicon in the silicon-dioxide layer. In thermal-shock tests (-40 °C/300 °C), ρc hardly changed up to 2000 cycles, and that trend was constant regardless of SiC carrier type. In both tests, almost no thermal deterioration of ρc around 300 °C was observed even in air, so it is concluded that the CBKR structure is robust enough for installation in a high-temperature environment such as a nuclear power plant under decommissioning.
DC.rights	The full-text file will be made open to the public on 9 October 2021 in accordance with the publisher's policy.
DC.rights	This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence.
DC.format	78287
citation_title	Long-term stability of nickel-based ohmic contacts with n-type and p-type 4H-SiC in a high-temperature environment
citation_author	Masunaga, Masahiro
	Crescitelli, Viviana
	Funaki, Tsuyoshi
citation_publisher	IOP Publishing
citation_language	英語
citation_date	2020-10
citation_journal_title	Japanese Journal of Applied Physics
citation_volume	59
citation_issue	10
citation_firstpage	104005
citation_doi	https://doi.org/10.35848/1347-4065/abbb1f
citation_public_url	https://hdl.handle.net/11094/78287

Long-term stability of nickel-based ohmic contacts with n-type and p-type 4H-SiC in a high-temperature environment

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