学術雑誌論文

学術雑誌論文

text

Japanese Journal of Applied Physics. 2020, 59(9), p. 090905

Self-limiting processes in thermal atomic layer etching of nickel by hexafluoroacetylacetone

IOP Publishing Ltd

英語

text

2020-09

https://doi.org/10.35848/1347-4065/aba9a7

Abdulrahman H. Basher, Ikutaro Hamada, and Satoshi Hamaguchi. Jpn. J. Appl. Phys. 59 090905.

In thermal atomic layer etching (ALE) of Ni, a thin oxidized Ni layer is removed by a hexafluoroacetylacetone (hfacH) etchant gas at an elevated surface temperature, and etching ceases when a metallic Ni surface appears (self-limiting step). However, atomistic details of the self-limiting step was not well understood. With periodic density-functional-theory calculations, it is found that hfacH molecules barrierlessly adsorb and tend to decompose on a metallic Ni surface, in contrast to the case of a NiO surface, where they can form volatile Ni(hfac)2. Our results clarify the origin of the self-limiting process in the thermal ALE.

© 2020 The Japan Society of Applied Physics. This article is licensed under a Creative Commons Attribution 4.0 International License.

78315

Self-limiting processes in thermal atomic layer etching of nickel by hexafluoroacetylacetone

IOP Publishing Ltd

英語

2020-09

Japanese Journal of Applied Physics

59

9

090905

https://doi.org/10.35848/1347-4065/aba9a7

https://hdl.handle.net/11094/78315