Low energy indium or gallium ion implantations to SiO2 thin films for development of novel catalysts

Yoshimura, Satoru; Kiuchi, Masato; Nishimoto, Yoshihiro et al.

e-Journal of Surface Science and Nanotechnology, 2014, 12, 197-202

アクセス数:1,027件（2025-08-21 12:08 集計）

固定URL: https://hdl.handle.net/11094/78467

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タイトル
Low energy indium or gallium ion implantations to SiO2 thin films for development of novel catalysts
著者
NRID
1000040294029 1000040294029
researchmap permalink
read0051706 read0051706
Scopus Author ID
36093428100 36093428100
著者名
Yoshimura, Satoru
NRID
1000050356862 1000050356862
researchmap permalink
read0005090 read0005090
著者名
Kiuchi, Masato
NRID
1000030550115 1000030550115
ORCID
0000-0002-7182-0503 0000-0002-7182-0503
researchmap permalink
nishimoto123 nishimoto123
Scopus Author ID
15048464600 15048464600
著者名
Nishimoto, Yoshihiro
NRID
1000040273601 1000040273601
ORCID
0000-0002-6618-2893 0000-0002-6618-2893
researchmap permalink
read0185253 read0185253
Scopus Author ID
7402645045 7402645045
著者名
Yasuda, Makoto
NRID
1000020144438 1000020144438
著者名
Baba, Akio
NRID
1000060301826 1000060301826
ORCID
0000-0001-6580-8797 0000-0001-6580-8797
researchmap permalink
satoshi_hamaguchi satoshi_hamaguchi
Scopus Author ID
55220082400 55220082400
著者名
Hamaguchi, Satoshi
キーワード等
Catalysis
Gallium
Indium
Ion implantation
内容
Satoru Yoshimura, Masato Kiuchi, Yoshihiro Nishimoto, Makoto Yasuda, Akio Baba, Satoshi Hamaguchi, Low Energy Indium or Gallium Ion Implantations to SiO2 Thin Films for Development of Novel Catalysts, e-Journal of Surface Science and Nanotechnology, 2014, Volume 12, Pages 197-202, Released April 26, 2014, Online ISSN 1348-0391, https://doi.org/10.1380/ejssnt.2014.197, https://www.jstage.jst.go.jp/article/ejssnt/12/0/12_197/_article/-char/en
抄録
It has been demonstrated that indium (In) implanted silicon dioxide (SiO thin films catalyze a reaction of benzhydrol with acetylacetone. In this study, it is found that the threshold In ion incident energy for manifestation of the catalytic effect exists between 400 and 470 eV. Furthermore, a technique to implant gallium (Ga) to SiOfilms has been developed with highly controlled doses and injection energies for the formation of thin films that promote Ga catalysts. The efficiency of catalytic reactions by Ga implanted SiOthin films is yet to be improved. Unlike In implanted SiO2, the reason why no significant reaction was observed in the case of Ga implanted SiOfilms examined in this study seems that the Ga ion energy was so low that deposited surface Ga atoms should lack interactions with Si atoms for the manifestation of catalytic reaction. © 2014 The Surface Science Society of Japan.
出版者
The Japan Society of Vacuum and Surface Science
収録物名
e-Journal of Surface Science and Nanotechnology
巻(号)
12
ページ
197-202
刊行年月
2014-04-26
言語
英語
ハンドルURL
https://hdl.handle.net/11094/78467
eISSN
13480391
関連情報 (isIdenticalTo)
DOI (出版社版)
https://doi.org/10.1380/ejssnt.2014.197
アクセス権
open access
権利情報
© 2014 The Surface Science Society of Japan. This article is licensed under a Creative Commons Attribution 4.0 International License.
出版タイプ
Version of Record
カテゴリ
学術雑誌論文 Journal Article