Control of atomic layer degradation on Si substrate

Nakamura, Y.; Tatsumi, T.; Kobayashi, S.; Kugimiya, K.; Harano, T.; Ando, A.; Kawase, T.; Hamaguchi, S.; Iseda, S.

doi:https://doi.org/10.1116/1.2713114

Control of atomic layer degradation on Si substrate

Nakamura, Y.; Tatsumi, T.; Kobayashi, S. et al.

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2007, 25(4), 1062-1067

アクセス数:716件（2025-08-28 13:17 集計）

固定URL: https://hdl.handle.net/11094/78477

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タイトル	Control of atomic layer degradation on Si substrate
著者	著者名 Nakamura, Y.
	著者名 Tatsumi, T.
	著者名 Kobayashi, S.
	著者名 Kugimiya, K.
	著者名 Harano, T.
	NRID 1000060452471 1000060452471 著者名 Ando, A.
	著者名 Kawase, T.
	NRID 1000060301826 1000060301826 ORCID 0000-0001-6580-8797 0000-0001-6580-8797 researchmap permalink satoshi_hamaguchi satoshi_hamaguchi Scopus Author ID 55220082400 55220082400 著者名 Hamaguchi, S.
	著者名 Iseda, S.
内容	Y. Nakamura et al., Journal of Vacuum Science & Technology A 25, 1062 (2007) https://doi.org/10.1116/1.2713114
抄録	To develop 32 nm node devices, the degradation of atomic layers on the surface of Si substrates must be controlled. During the etching of a Si O2 or Si3 N4 hard mask or sidewall, the surface of Si is attended due to exposure to fluorocarbon plasma. The authors have quantitatively evaluated the relationship between the energy of incident ions and the thickness of the fluorocarbon polymer for a C H2 F2 C F4 Ar O2 plasma in a dual frequency CCP system. At a fixed ion energy the thickness of the damage layer (Td) basically depended on the thickness of the fluorocarbon polymer (TC-F). When the TC-F was changed by controlling the OC Fx gas ratio, Td had a minimum thickness under the conditions at balance point: Pb, under which the TC-F was nearly equal to ion penetration depth: Dp. Using molecular dynamics simulation, reaction around the transition from Si O2 to Si was clarified. The damage was done to the Si before the Si O2 was completely removed, and the largest Td was observed when the Si O2 was etched off. After that, TC-F began to increase because there was no longer an outflux of O from Si O2 and the damage decreased as the unstable Si Fx species in the damaged layer desorbed. Once the TC-F became thicker than the ion penetration depth, the damaged layer got buried and Td stopped changing. When the ion penetration depth was controlled to be equal to TC-F in a steady state under low ion energy conditions, the Td was reduced to less than 1 nm. © 2007 American Vacuum Society.
出版者	American Institute of Physics
収録物名	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
巻(号)	25(4)
ページ	1062-1067
刊行年月	2007-07
言語	英語
ハンドルURL	https://hdl.handle.net/11094/78477
PISSN	07342101
NCID	AA10635514
関連情報 (isIdenticalTo)	DOI (出版社版) https://doi.org/10.1116/1.2713114
アクセス権	open access
権利情報	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Vacuum Science & Technology A 25, 1062 (2007) and may be found at https://doi.org/10.1116/1.2713114.
出版タイプ	Version of Record
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCTERMS.bibliographicCitation	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2007, 25(4), p. 1062-1067
DC.title	Control of atomic layer degradation on Si substrate
DC.creator	Nakamura, Y.
	Tatsumi, T.
	Kobayashi, S.
	Kugimiya, K.
	Harano, T.
	Ando, A.
	Kawase, T.
	Hamaguchi, S.
	Iseda, S.
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	英語
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2007-07
DC.identifier	https://doi.org/10.1116/1.2713114
DC.description	Y. Nakamura et al., Journal of Vacuum Science & Technology A 25, 1062 (2007) https://doi.org/10.1116/1.2713114
DCTERMS.abstract	To develop 32 nm node devices, the degradation of atomic layers on the surface of Si substrates must be controlled. During the etching of a Si O2 or Si3 N4 hard mask or sidewall, the surface of Si is attended due to exposure to fluorocarbon plasma. The authors have quantitatively evaluated the relationship between the energy of incident ions and the thickness of the fluorocarbon polymer for a C H2 F2 C F4 Ar O2 plasma in a dual frequency CCP system. At a fixed ion energy the thickness of the damage layer (Td) basically depended on the thickness of the fluorocarbon polymer (TC-F). When the TC-F was changed by controlling the OC Fx gas ratio, Td had a minimum thickness under the conditions at balance point: Pb, under which the TC-F was nearly equal to ion penetration depth: Dp. Using molecular dynamics simulation, reaction around the transition from Si O2 to Si was clarified. The damage was done to the Si before the Si O2 was completely removed, and the largest Td was observed when the Si O2 was etched off. After that, TC-F began to increase because there was no longer an outflux of O from Si O2 and the damage decreased as the unstable Si Fx species in the damaged layer desorbed. Once the TC-F became thicker than the ion penetration depth, the damaged layer got buried and Td stopped changing. When the ion penetration depth was controlled to be equal to TC-F in a steady state under low ion energy conditions, the Td was reduced to less than 1 nm. © 2007 American Vacuum Society.
DC.rights	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Vacuum Science & Technology A 25, 1062 (2007) and may be found at https://doi.org/10.1116/1.2713114.
DC.format	78477
citation_title	Control of atomic layer degradation on Si substrate
citation_author	Nakamura, Y.
	Tatsumi, T.
	Kobayashi, S.
	Kugimiya, K.
	Harano, T.
	Ando, A.
	Kawase, T.
	Hamaguchi, S.
	Iseda, S.
citation_publisher	American Institute of Physics
citation_language	英語
citation_date	2007-07
citation_journal_title	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
citation_volume	25
citation_issue	4
citation_firstpage	1062
citation_lastpage	1067
citation_doi	https://doi.org/10.1116/1.2713114
citation_public_url	https://hdl.handle.net/11094/78477

Control of atomic layer degradation on Si substrate

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