学術雑誌論文

学術雑誌論文

Physics of Plasmas. 2001, 8(4), p. 1384-1394

Numerical investigation on plasma and poly-Si etching uniformity control over a large area in a resonant inductively coupled plasma source

American Institute of Physics

英語

2001-04

https://doi.org/10.1063/1.1350671

S. S. Kim et al., Physics of Plasmas 8, 1384 (2001) https://doi.org/10.1063/1.1350671

In high-density plasma etching processes for ultra-large-scale integrated (ULSI) circuits, the uniformity of the plasma over a large area is of major concern. Recently a resonant inductively coupled plasma source [S. S. Kim et al., Appl. Phys. Lett. 77, 492 (2000)] has been proposed for large-area plasma processing, which achieves large-area plasma uniformity by properly tuning its antenna with an external variable capacitor. In the present paper, the plasma transport and poly-Si etching characteristics of this plasma source have been numerically investigated using a self-consistent model for electron heating, plasma transport, and microscopic etching profiles. The numerical simulation results indicate that uniform poly-Si etching over 300 mm in diameter can be easily achieved in this plasma source. © 2001 American Institute of Physics.

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Physics of Plasmas 8, 1384 (2001) and may be found at https://doi.org/10.1063/1.1350671.

78494

Numerical investigation on plasma and poly-Si etching uniformity control over a large area in a resonant inductively coupled plasma source

American Institute of Physics

英語

2001-04

Physics of Plasmas

8

4

1384

1394

https://doi.org/10.1063/1.1350671

https://hdl.handle.net/11094/78494