学術雑誌論文

学術雑誌論文

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1995, 13(2), p. 183-191

Simulations of trench-filling profiles under ionized magnetron sputter metal deposition

American Institute of Physics Inc.

英語

1995-03

https://doi.org/10.1116/1.587995

S. Hamaguchi and S. M. Rossnagel, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 13, 183 (1995) https://doi.org/10.1116/1.587995

Numerical simulation results are presented for microscopic profile evolutions of deposited metal films in trench structures under ionized magnetron sputter deposition. The model used for the simulations takes account of the deposition of both ionized and neutral metal species and sputtering (i.e., etching) of the deposited film by the bombardment of metal and inert-gas (such as argon) ions. The evolution of the surface topography is calculated numerically using the shock-tracking algorithm. Numerical results are also compared with experimental observations. A primary application of this metal deposition technique is interconnect metallization on semiconductors.

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 13, 183 (1995) and may be found at https://doi.org/10.1116/1.587995.

78503

Simulations of trench-filling profiles under ionized magnetron sputter metal deposition

American Institute of Physics Inc.

英語

1995-03

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

13

2

183

191

https://doi.org/10.1116/1.587995

https://hdl.handle.net/11094/78503