学術雑誌論文

学術雑誌論文

text

AIP Advances. 2018, 8(8), p. 085305

Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements

American Institute of Physics

英語

text

2018-08

https://doi.org/10.1063/1.5034048

Eigo Fujita, Mitsuru Sometani, Tetsuo Hatakeyama, Shinsuke Harada, Hiroshi Yano, Takuji Hosoi, Takayoshi Shimura, and Heiji Watanabe, "Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements", AIP Advances 8, 085305 (2018) https://doi.org/10.1063/1.5034048.

Improved performance in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) by incorporating Ba into insulator/SiC interfaces was investigated by using a combination of the Hall effect and split capacitance-voltage measurements. It was found that a moderate annealing temperature causes negligible metal-enhanced oxidation, which is rather beneficial for increments in field-effect mobility (_{μFE}) of the FETs together with suppressed surface roughness of the gate oxides. The combined method revealed that, while severe _μFE degradation in SiC-MOSFETs is caused by a reduction of effective mobile carriers due to carrier trapping at the SiO_2/SiC interfaces, Ba incorporation into the interface significantly increases mobile carrier density with greater impact than the widely-used nitrided interfaces.

© 2018 Author(s). This article is licensed under a Creative Commons Attribution 4.0 International License.

85477

Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements

American Institute of Physics

英語

2018-08

AIP Advances

8

8

085305

https://doi.org/10.1063/1.5034048

https://hdl.handle.net/11094/85477