学術雑誌論文

学術雑誌論文

text

AIP Advances. 2015, 5(9), p. 097134

Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas

American Institute of Physics

英語

text

2015-09

https://doi.org/10.1063/1.4930980

Atthawut Chanthaphan, Takuji Hosoi, Takayoshi Shimura and Heiji Watanabe, "Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas", AIP Advances 5, 097134 (2015) https://doi.org/10.1063/1.4930980.

An alternative and effective method to perform interface nitridation for 4H-SiC metal-oxide-semiconductor (MOS) devices was developed. We found that the high-temperature post-oxidation annealing (POA) in N_2 ambient was beneficial to incorporate a sufficient amount of nitrogen atoms directly into thermal SiO_2/SiC interfaces. Although N_2-POA was ineffective for samples with thick thermal oxide layers, interface nitridation using N_2-POA was achieved under certain conditions, i.e., thin SiO_2 layers (< 15 nm) and high annealing temperatures (>1350°C). Electrical characterizations of SiC-MOS capacitors treated with high-temperature N_2-POA revealed the same evidence of slow trap passivation and fast trap generation that occurred in NO-treated devices fabricated with the optimized nitridation conditions.

© 2015 Author(s). This article is licensed under a Creative Commons Attribution 3.0 Unported License.

85478

Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas

American Institute of Physics

英語

2015-09

AIP Advances

5

9

097134

https://doi.org/10.1063/1.4930980

https://hdl.handle.net/11094/85478