Suppression of surface segregation and heavy arsenic doping into silicon during selective epitaxial chemical vapor deposition under atmospheric pressure

Ikuta, Tetsuya; Fujita, Shigeru; Iwamoto, Hayato; Kadomura, Shingo; Shimura, Takayoshi; Watanabe, Heiji; Yasutake, Kiyoshi

doi:https://doi.org/10.1063/1.2778539

Suppression of surface segregation and heavy arsenic doping into silicon during selective epitaxial chemical vapor deposition under atmospheric pressure

Ikuta, Tetsuya; Fujita, Shigeru; Iwamoto, Hayato et al.

Applied Physics Letters, 2007, 91(9), 092115

アクセス数:927件（2025-07-28 14:39 集計）

固定URL: https://hdl.handle.net/11094/85480

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タイトル	Suppression of surface segregation and heavy arsenic doping into silicon during selective epitaxial chemical vapor deposition under atmospheric pressure
著者	著者名 Ikuta, Tetsuya
	著者名 Fujita, Shigeru
	著者名 Iwamoto, Hayato
	著者名 Kadomura, Shingo
	NRID 1000090252600 1000090252600 ORCID 0000-0002-8859-7010 0000-0002-8859-7010 researchmap permalink read0042803 read0042803 Scopus Author ID 35510328800 35510328800 著者名 Shimura, Takayoshi
	NRID 1000090379115 1000090379115 ORCID 0000-0002-7916-3093 0000-0002-7916-3093 researchmap permalink heijiw heijiw Scopus Author ID 7410305922 7410305922 著者名 Watanabe, Heiji
	NRID 1000080166503 1000080166503 著者名 Yasutake, Kiyoshi
内容	Tetsuya Ikuta, Shigeru Fujita, Hayato Iwamoto, Shingo Kadomura, Takayoshi Shimura, Heiji Watanabe and Kiyoshi Yasutake, "Suppression of surface segregation and heavy arsenic doping into silicon during selective epitaxial chemical vapor deposition under atmospheric pressure", Appl. Phys. Lett. 91, 092115 (2007) https://doi.org/10.1063/1.2778539.
抄録	The authors investigated the effects of the growth rate and temperature on the surface segregation during in situ As-doped selective epitaxial growth under atmospheric pressure. It was confirmed that high growth rate and high temperature suppress surface segregation. A film with a high As concentration (7.5× 10^{19} at. cm^3) and a smooth surface was obtained by optimizing these conditions.
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	91(9)
ページ	092115
刊行年月	2007-08-27
言語	英語
ハンドルURL	https://hdl.handle.net/11094/85480
PISSN	00036951
NCID	AA00543431
関連情報 (isIdenticalTo)	DOI (出版社版) https://doi.org/10.1063/1.2778539
アクセス権	open access
権利情報	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. and may be found at https://doi.org/10.1063/1.2778539.
出版タイプ	Version of Record
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	Applied Physics Letters. 2007, 91(9), p. 092115
DC.title	Suppression of surface segregation and heavy arsenic doping into silicon during selective epitaxial chemical vapor deposition under atmospheric pressure
DC.creator	Ikuta, Tetsuya
	Fujita, Shigeru
	Iwamoto, Hayato
	Kadomura, Shingo
	Shimura, Takayoshi
	Watanabe, Heiji
	Yasutake, Kiyoshi
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2007-08-27
DC.identifier	https://doi.org/10.1063/1.2778539
DC.description	Tetsuya Ikuta, Shigeru Fujita, Hayato Iwamoto, Shingo Kadomura, Takayoshi Shimura, Heiji Watanabe and Kiyoshi Yasutake, "Suppression of surface segregation and heavy arsenic doping into silicon during selective epitaxial chemical vapor deposition under atmospheric pressure", Appl. Phys. Lett. 91, 092115 (2007) https://doi.org/10.1063/1.2778539.
DCTERMS.abstract	The authors investigated the effects of the growth rate and temperature on the surface segregation during in situ As-doped selective epitaxial growth under atmospheric pressure. It was confirmed that high growth rate and high temperature suppress surface segregation. A film with a high As concentration (7.5× 10^{19} at. cm^3) and a smooth surface was obtained by optimizing these conditions.
DC.rights	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. and may be found at https://doi.org/10.1063/1.2778539.
DC.format	85480
citation_title	Suppression of surface segregation and heavy arsenic doping into silicon during selective epitaxial chemical vapor deposition under atmospheric pressure
citation_author	Ikuta, Tetsuya
	Fujita, Shigeru
	Iwamoto, Hayato
	Kadomura, Shingo
	Shimura, Takayoshi
	Watanabe, Heiji
	Yasutake, Kiyoshi
citation_publisher	American Institute of Physics
citation_language	英語
citation_date	2007-08-27
citation_journal_title	Applied Physics Letters
citation_volume	91
citation_issue	9
citation_firstpage	092115
citation_doi	https://doi.org/10.1063/1.2778539
citation_public_url	https://hdl.handle.net/11094/85480

Suppression of surface segregation and heavy arsenic doping into silicon during selective epitaxial chemical vapor deposition under atmospheric pressure

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