学術雑誌論文

学術雑誌論文

text

Applied Physics Letters. 2009, 94(12), p. 122905

Systematic study on work-function-shift in metal/Hf-based high-k gate stacks

American Institute of Physics

英語

text

2009-03-23

https://doi.org/10.1063/1.3103314

Yuki Kita, Shinichi Yoshida, Takuji Hosoi, Takayoshi Shimura, Kenji Shiraishi, Yasuo Nara, Keisaku Yamada and Heiji Watanabe , "Systematic study on work-function-shift in metal/Hf-based high-k gate stacks", Appl. Phys. Lett. 94, 122905 (2009) https://doi.org/10.1063/1.3103314.

Change in the work function (WF) of the gate electrode material caused by the contact with Hf-based high- k gate dielectrics was investigated by means of the flat-band voltage (V_{fb}) shift in capacitance-voltage curves, and the interface dipole, which modifies the WF, was characterized by x-ray photoelectron spectroscopy. We observed a negative V_{fb} shift and corresponding interface dipole, which suggest the formation of oxygen vacancy (V_O) in the Hf-based oxides. In contrast, we observed an opposite (positive) V_{fb} shift and interface dipole when Au electrodes were formed on cleaned Hf-based dielectrics. This indicates that Au-Hf bond hybridization at the Au/HfSiON interface also causes effective WF modulation, as theoretically predicted by Shiraishi et al. (Tech. - Dig. Int. Electron Devices Meet. 2005, 43).

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. and may be found at https://doi.org/10.1063/1.3103314.

85488

Systematic study on work-function-shift in metal/Hf-based high-k gate stacks

American Institute of Physics

英語

2009-03-23

Applied Physics Letters

94

12

122905

https://doi.org/10.1063/1.3103314

https://hdl.handle.net/11094/85488