Development of array-type atmospheric-pressure RF plasma generator with electric on-off control for high-throughput numerically controlled processes

Takei, H.; Kurio, S.; Matsuyama, S.; Yamauchi, K.; Sano, Y.

doi:https://doi.org/10.1063/1.4964656

Development of array-type atmospheric-pressure RF plasma generator with electric on-off control for high-throughput numerically controlled processes

Takei, H.; Kurio, S.; Matsuyama, S. et al.

Review of Scientific Instruments, 2016, 87(10), 105121

アクセス数:665件（2025-07-23 11:58 集計）

固定URL: https://hdl.handle.net/11094/86946

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タイトル	Development of array-type atmospheric-pressure RF plasma generator with electric on-off control for high-throughput numerically controlled processes
著者	著者名 Takei, H.
	著者名 Kurio, S.
	NRID 1000010423196 1000010423196 著者名 Matsuyama, S.
	NRID 1000010174575 1000010174575 researchmap permalink yamauchikazuto yamauchikazuto Scopus Author ID 7801509680 7801509680 著者名 Yamauchi, K.
	NRID 1000040252598 1000040252598 ORCID 0000-0002-1767-922X 0000-0002-1767-922X researchmap permalink read0042804 read0042804 Scopus Author ID 7402344818 7402344818 著者名 Sano, Y.
内容	H. Takei, S. Kurio, S. Matsuyama, K. Yamauchi, and Y. Sano, "Development of array-type atmospheric-pressure RF plasma generator with electric on–off control for high-throughput numerically controlled processes", Review of Scientific Instruments 87, 105121 (2016) https://doi.org/10.1063/1.4964656.
抄録	An array-type atmospheric-pressure radio-frequency (RF) plasma generator is proposed for high-precision and high-throughput numerically controlled (NC) processes. We propose the use of a metal-oxide-semiconductor field-effect transistor (MOSFET) circuit for direct RF switching to achieve plasma on-off control. We confirmed that this type of circuit works correctly using a MOSFET with a small parasitic capacitance between its source and gate. We examined the design method for the distance between adjacent electrodes, which corresponds to the parasitic capacitance between adjacent electrodes and is very important in the individual on-off control of each electrode. We developed a prototype array-type plasma generator apparatus with 19 electrodes and the same number of MOSFET circuits; we then confirmed that each electrode could control its plasma on-off state individually. We also demonstrated that the thickness uniformity of the surface Si layer of a silicon-on-insulator wafer could be processed to less than 1 nm peak to valley by the NC sacrificial oxidation method using the apparatus.
出版者	American Institute of Physics
収録物名	Review of Scientific Instruments
巻(号)	87(10)
ページ	105121
刊行年月	2016-10
言語	英語
ハンドルURL	https://hdl.handle.net/11094/86946
PISSN	00346748
eISSN	10897623
NCID	AA00693547
関連情報 (isIdenticalTo)	DOI (出版社版) https://doi.org/10.1063/1.4964656
アクセス権	open access
権利情報	This article is licensed under a Creative Commons Attribution 4.0 International License.
出版タイプ	Version of Record
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	Review of Scientific Instruments. 2016, 87(10), p. 105121
DC.title	Development of array-type atmospheric-pressure RF plasma generator with electric on-off control for high-throughput numerically controlled processes
DC.creator	Takei, H.
	Kurio, S.
	Matsuyama, S.
	Yamauchi, K.
	Sano, Y.
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2016-10
DC.identifier	https://doi.org/10.1063/1.4964656
DC.description	H. Takei, S. Kurio, S. Matsuyama, K. Yamauchi, and Y. Sano, "Development of array-type atmospheric-pressure RF plasma generator with electric on–off control for high-throughput numerically controlled processes", Review of Scientific Instruments 87, 105121 (2016) https://doi.org/10.1063/1.4964656.
DCTERMS.abstract	An array-type atmospheric-pressure radio-frequency (RF) plasma generator is proposed for high-precision and high-throughput numerically controlled (NC) processes. We propose the use of a metal-oxide-semiconductor field-effect transistor (MOSFET) circuit for direct RF switching to achieve plasma on-off control. We confirmed that this type of circuit works correctly using a MOSFET with a small parasitic capacitance between its source and gate. We examined the design method for the distance between adjacent electrodes, which corresponds to the parasitic capacitance between adjacent electrodes and is very important in the individual on-off control of each electrode. We developed a prototype array-type plasma generator apparatus with 19 electrodes and the same number of MOSFET circuits; we then confirmed that each electrode could control its plasma on-off state individually. We also demonstrated that the thickness uniformity of the surface Si layer of a silicon-on-insulator wafer could be processed to less than 1 nm peak to valley by the NC sacrificial oxidation method using the apparatus.
DC.rights	This article is licensed under a Creative Commons Attribution 4.0 International License.
DC.format	86946
citation_title	Development of array-type atmospheric-pressure RF plasma generator with electric on-off control for high-throughput numerically controlled processes
citation_author	Takei, H.
	Kurio, S.
	Matsuyama, S.
	Yamauchi, K.
	Sano, Y.
citation_publisher	American Institute of Physics
citation_language	英語
citation_date	2016-10
citation_journal_title	Review of Scientific Instruments
citation_volume	87
citation_issue	10
citation_firstpage	105121
citation_doi	https://doi.org/10.1063/1.4964656
citation_public_url	https://hdl.handle.net/11094/86946

Development of array-type atmospheric-pressure RF plasma generator with electric on-off control for high-throughput numerically controlled processes

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