学術雑誌論文

学術雑誌論文

text

Applied Physics Letters. 2007, 90(20), p. 202106

Atomic-scale flattening of SiC surfaces by electroless chemical etching in HF solution with Pt catalyst

American Institute of Physics

英語

text

2007-05-16

https://doi.org/10.1063/1.2739084

Kenta Arima, Hideyuki Hara, et al. "Atomic-scale flattening of SiC surfaces by electroless chemical etching in HF solution with Pt catalyst", Appl. Phys. Lett. 90(20), 202106 (2007) https://doi.org/10.1063/1.2739084.

The authors present a method for flattening SiC surfaces with Pt as a catalyst in HF solution. The mechanism for flattening SiC surfaces is discussed. The flattened 4H-SiC (0001) surface is composed of alternating wide and narrow terraces with single-bilayer-height steps, which are induced by the rate difference of the catalytic reactions between adjacent terraces. Scanning tunneling microscopy images reveal a 1×1 phase on the terraces. The 1×1 phase is composed of coexisting of F- and OH-terminated Si atoms, which originate from the polarization of the underlying Si-C bonds. © 2007 American Institute of Physics.

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 90(20), 202106 (2007) and may be found at https://doi.org/10.1063/1.2739084.

86973

Atomic-scale flattening of SiC surfaces by electroless chemical etching in HF solution with Pt catalyst

American Institute of Physics

英語

2007-05-16

Applied Physics Letters

90

20

202106

https://doi.org/10.1063/1.2739084

https://hdl.handle.net/11094/86973