学術雑誌論文

学術雑誌論文

text

精密工学会誌論文集. 2004, 70(4), p. 547-551

精密工学会

日本語

text

2004-04-05

https://doi.org/10.2493/jspe.70.547

山内 和人, 三村 秀和, 久保田 章亀, 有馬 健太, 稲垣 耕司, 遠藤 勝義, 森 勇藏, EEM(Elastic Emission Machining)によるSi(001)表面の平坦化 (第2報), 精密工学会誌論文集, 2004, 70 巻, 4 号, p. 547-551, https://doi.org/10.2493/jspe.70.547.

Ultraprecision surface preparation techniques to make atomically flat semiconductor surfaces are strongly demanded toward the next-generation semiconductor technology age including nanotechnology age, in which extremely integrated and functionally enhanced devices will be realized. Particularly, Si(001) surface is the most important and widely utilized surface because of the controllability of the interfacial electronic state density at the surface oxidized film. This will be the case into future nanotechnology age. However, Si(001) surface is the most difficult surface to be flattened, and no industrially promising method exists. The only possible technique is a heating method in ultra-high vacuum and is unfortunately not useful from viewpoints of industrial applications. In this work, a new EEM (elastic emission machining) system is developed and tried to apply to the preparation of ultrasmooth Si(001) surface. Processed surfaces are observed and characterized by AFM (atomic force microscope), STM (scanning tunneling microscope) and LEED (low energy electron diffraction). Obtained STM images show that EEM surfaces have an atomic-level flatness, and about 95% of a extended area having a dimension of 100nm×100nm is constructed by only three atomic layers having a structure of 1×1 surface lattice.

86993

EEM(Elastic Emission Machining)によるSi(001)表面の平坦化（第2報） : 加工表面の原子像観察と構造評価

精密工学会

日本語

2004-04-05

精密工学会誌論文集

70

4

547

551

https://doi.org/10.2493/jspe.70.547

https://hdl.handle.net/11094/86993