学術雑誌論文

学術雑誌論文

text

Applied Physics Letters. 1991, 59(18), p. 2284-2286

Si and GaAs dry etching utilizing showered electron-beam assisted etching through Cl2 gas

American Institute of Physics

英語

text

1991-10-28

https://doi.org/10.1063/1.106044

Matsui S., Watanabe H.. Si and GaAs dry etching utilizing showered electron-beam assisted etching through Cl2 gas. Applied Physics Letters, 59, 18, 2284. https://doi.org/10.1063/1.106044.

Electron-beam (EB) dry etching for Si and GaAs has been studied by utilizing showered electron-beam assisted etching in the presence of Cl 2 gas. Anisotropic etching has been demonstrated for both Si and GaAs EB dry etching. Si and GaAs patterns with 0.6 and 0.3 μm linewidths have been obtained at a dose of 2×10-2 C/cm2 and 1×10-3 C/cm2. It was confirmed, through measuring photoluminescence, that damage induced by EB dry etching is nearly the same as that caused by gas etching and less than damage induced by reactive ion-beam etching and ion-beam etching.

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Matsui S., Watanabe H.. Si and GaAs dry etching utilizing showered electron-beam assisted etching through Cl2 gas. Applied Physics Letters, 59, 18, 2284 and may be found at https://doi.org/10.1063/1.106044.

88194

Si and GaAs dry etching utilizing showered electron-beam assisted etching through Cl2 gas

American Institute of Physics

英語

1991-10-28

Applied Physics Letters

59

18

2284

2286

https://doi.org/10.1063/1.106044

https://hdl.handle.net/11094/88194