Stacking Faults and Intercalants in (Ta₁₋ₓTiₓ)Se₂ Revealed by Cross-Sectional Transmission Electron Microscopy

Sato, Kazuhisa; Matsushita, Toshiya

Journal of Physical Chemistry C, 2022, 126(33), 14290-14296

アクセス数:365件（2025-08-14 21:05 集計）

固定URL: https://hdl.handle.net/11094/89386

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タイトル
Stacking Faults and Intercalants in (Ta₁₋ₓTiₓ)Se₂ Revealed by Cross-Sectional Transmission Electron Microscopy
著者
NRID
1000070314424 1000070314424
ORCID
0000-0001-9078-2541 0000-0001-9078-2541
researchmap permalink
read0158304 read0158304
Scopus Author ID
55552977400 55552977400
著者名
Sato, Kazuhisa
著者名
Matsushita, Toshiya
内容
Kazuhisa Sato and Toshiya Matsushita, Stacking Faults and Intercalants in (Ta1–xTix)Se2 Revealed by Cross-Sectional Transmission Electron Microscopy, J. Phys. Chem. C, 2022, 126(33), 14290–14296. © 2022 American Chemical Society
抄録
Structural defects in the layered compounds (Ta₁₋ₓTiₓ)Se₂(0 ≤ x ≤ 1), characterized by anisotropy in electrical conductivity, have been studied by cross-sectional observation using chemically sensitive high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Intercalants were detected in the widest space between Se atoms across the van der Waals (vdW) gap, regardless of the Ti content (except TiSe₂) or thermal history after the crystal growth. Binary TaSe₂with both 3R and 2H structures includes a high density of stacking faults, while Ti addition stabilizes the 1T structure with no stacking faults. We show that the chemical composition dominates the structural defects in the (Ta₁₋ₓTiₓ)Se₂ compounds. Substitution of Ta with Ti acts as a hole addition, which reduces the number of conduction electrons in the layer, while an intercalated atom in the vdW gap may not act as a donor of conduction electrons.
出版者
American Chemical Society
収録物名
Journal of Physical Chemistry C
巻(号)
126(33)
ページ
14290-14296
刊行年月
2022-08-25
言語
英語
ハンドルURL
https://hdl.handle.net/11094/89386
PISSN
19327447
eISSN
19327455
NCID
AA1217589X
関連情報 (isVersionOf)
DOI (出版社版)
https://doi.org/10.1021/acs.jpcc.2c03943
アクセス権
open access
権利情報
This document is the Accepted Manuscript version of a Published Work that appeared in final form in J. Phys. Chem. C, © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.jpcc.2c03943.
出版タイプ
Accepted Manuscript
カテゴリ
学術雑誌論文 Journal Article