学術雑誌論文

学術雑誌論文

text

ACS Omega. 2018, 3(10), p. 13524-13529

Probing Crystal Dislocations in a Micrometer-Thick GaN Film by Modern High-Voltage Electron Microscopy

American Chemical Society

英語

text

2018-10-31

https://doi.org/10.1021/acsomega.8b02078

Kazuhisa Sato and Hidehiro Yasuda, Probing Crystal Dislocations in a Micrometer-Thick GaN Film by Modern High-Voltage Electron Microscopy, ACS Omega 2018, 3(10), 13524–13529. © 2022 American Chemical Society

We report on extreme penetration power of relativistic electrons in a micrometer-thick gallium nitride epitaxial film and its application to probing threading dislocations, which were introduced during crystal growth. Maximum usable thickness of the specimen was quantitatively evaluated using high-voltage transmission electron microscopy (TEM) operating at 1 MV. The width of dislocation images was used as a measure for the evaluation of usable thickness. Superior maximum usable thickness was obtained in scanning transmission electron microscopy (STEM) than in TEM mode; the results were 6.9 μm for STEM and 4.4 μm for TEM. In STEM, dislocations can be imaged with an almost constant width of 15–20 nm in a wide thickness range 1–4 μm. The latest high-voltage STEM is thus useful for observing dislocations in micrometer-thick inorganic materials.

© 2018 American Chemical Society

89388

Probing Crystal Dislocations in a Micrometer-Thick GaN Film by Modern High-Voltage Electron Microscopy

American Chemical Society

英語

2018-10-31

ACS Omega

3

10

13524

13529

https://doi.org/10.1021/acsomega.8b02078

https://hdl.handle.net/11094/89388