Extensive study of giant magnetoresistance properties in half-metallic Co₂(Fe,Mn)Si-based devices

Sakuraba, Y.; Ueda, M.; Miura, Y.; Sato, K.; Bosu, S.; Saito, K.; Shirai, M.; Konno, T. J.; Takanashi, K.

doi:https://doi.org/10.1063/1.4772546

Extensive study of giant magnetoresistance properties in half-metallic Co₂(Fe,Mn)Si-based devices

Sakuraba, Y.; Ueda, M.; Miura, Y. et al.

Applied Physics Letters, 2012, 101(25), 252408

アクセス数:155件（2025-04-20 15:05 集計）

固定URL: https://hdl.handle.net/11094/89406

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タイトル	Extensive study of giant magnetoresistance properties in half-metallic Co₂(Fe,Mn)Si-based devices
著者	NRID 1000010451618 1000010451618 著者名 Sakuraba, Y.
	著者名 Ueda, M.
	NRID 1000010361198 1000010361198 著者名 Miura, Y.
	NRID 1000070314424 1000070314424 ORCID 0000-0001-9078-2541 0000-0001-9078-2541 researchmap permalink read0158304 read0158304 Scopus Author ID 55552977400 55552977400 著者名 Sato, K.
	著者名 Bosu, S.
	著者名 Saito, K.
	著者名 Shirai, M.
	NRID 1000090260447 1000090260447 著者名 Konno, T. J.
	NRID 1000000187981 1000000187981 著者名 Takanashi, K.
内容	Y. Sakuraba, M. Ueda, Y. Miura, K. Sato, S. Bosu, K. Saito, M. Shirai, T. J. Konno, and K. Takanashi, "Extensive study of giant magnetoresistance properties in half-metallic Co₂(Fe,Mn)Si-based devices", Appl. Phys. Lett. 101, 252408 (2012) https://doi.org/10.1063/1.4772546.
抄録	Fully epitaxial Co₂FexMn1- xSi(CFMS)/Ag/Co₂FexMn1 -xSi current-perpendicular-to-plane giant magnetoresistive devices with various Fe/Mn ratios x and top CFMS layer thicknesses t CFMS were prepared. The highest magnetoresistance (MR) ratios, 58% at room temperature and 184% at 30 K, were observed in the sample with x = 0.4 and tCFMS = 3 nm. Enhancement of interface spin-asymmetry was suggested for x = 0.4 compared with that at x = 0. A MR ratio of 58% was also observed even in a very thin trilayer structure, CFMS(4 nm)/Ag(3 nm)/CFMS(2 nm), which is promising for a next-generation magnetic read sensor for high-density hard disk drives. © 2012 American Institute of Physics.
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	101(25)
ページ	252408
刊行年月	2012-12-17
言語	英語
ハンドルURL	https://hdl.handle.net/11094/89406
PISSN	00036951
NCID	AA00543431
関連情報 (isIdenticalTo)	DOI (出版社版) https://doi.org/10.1063/1.4772546
アクセス権	open access
権利情報	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Y. Sakuraba, M. Ueda, Y. Miura, K. Sato, S. Bosu, K. Saito, M. Shirai, T. J. Konno, and K. Takanashi, "Extensive study of giant magnetoresistance properties in half-metallic Co₂(Fe,Mn)Si-based devices", Appl. Phys. Lett. 101, 252408 (2012) and may be found at https://doi.org/10.1063/1.4772546.
出版タイプ	Version of Record
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	Applied Physics Letters. 2012, 101(25), p. 252408
DC.title	Extensive study of giant magnetoresistance properties in half-metallic Co₂(Fe,Mn)Si-based devices
DC.creator	Sakuraba, Y.
	Ueda, M.
	Miura, Y.
	Sato, K.
	Bosu, S.
	Saito, K.
	Shirai, M.
	Konno, T. J.
	Takanashi, K.
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2012-12-17
DC.identifier	https://doi.org/10.1063/1.4772546
DC.description	Y. Sakuraba, M. Ueda, Y. Miura, K. Sato, S. Bosu, K. Saito, M. Shirai, T. J. Konno, and K. Takanashi, "Extensive study of giant magnetoresistance properties in half-metallic Co₂(Fe,Mn)Si-based devices", Appl. Phys. Lett. 101, 252408 (2012) https://doi.org/10.1063/1.4772546.
DCTERMS.abstract	Fully epitaxial Co₂FexMn1- xSi(CFMS)/Ag/Co₂FexMn1 -xSi current-perpendicular-to-plane giant magnetoresistive devices with various Fe/Mn ratios x and top CFMS layer thicknesses t CFMS were prepared. The highest magnetoresistance (MR) ratios, 58% at room temperature and 184% at 30 K, were observed in the sample with x = 0.4 and tCFMS = 3 nm. Enhancement of interface spin-asymmetry was suggested for x = 0.4 compared with that at x = 0. A MR ratio of 58% was also observed even in a very thin trilayer structure, CFMS(4 nm)/Ag(3 nm)/CFMS(2 nm), which is promising for a next-generation magnetic read sensor for high-density hard disk drives. © 2012 American Institute of Physics.
DC.rights	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Y. Sakuraba, M. Ueda, Y. Miura, K. Sato, S. Bosu, K. Saito, M. Shirai, T. J. Konno, and K. Takanashi, "Extensive study of giant magnetoresistance properties in half-metallic Co₂(Fe,Mn)Si-based devices", Appl. Phys. Lett. 101, 252408 (2012) and may be found at https://doi.org/10.1063/1.4772546.
DC.format	89406
citation_title	Extensive study of giant magnetoresistance properties in half-metallic Co₂(Fe,Mn)Si-based devices
citation_author	Sakuraba, Y.
	Ueda, M.
	Miura, Y.
	Sato, K.
	Bosu, S.
	Saito, K.
	Shirai, M.
	Konno, T. J.
	Takanashi, K.
citation_publisher	American Institute of Physics
citation_language	英語
citation_date	2012-12-17
citation_journal_title	Applied Physics Letters
citation_volume	101
citation_issue	25
citation_firstpage	252408
citation_doi	https://doi.org/10.1063/1.4772546
citation_public_url	https://hdl.handle.net/11094/89406

Extensive study of giant magnetoresistance properties in half-metallic Co₂(Fe,Mn)Si-based devices

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