Effect of Strain on Room-Temperature Spin Transport in Si₀.₁Ge₀.₉

Naito, T.; Yamada, M.; Wagatsuma, Y.; Sawano, K.; Hamaya, K.

doi:https://doi.org/10.1103/PhysRevApplied.18.024005

Effect of Strain on Room-Temperature Spin Transport in Si₀.₁Ge₀.₉

Naito, T.; Yamada, M.; Wagatsuma, Y. et al.

Physical Review Applied, 2022, 18(2), 024005

アクセス数:626件（2025-07-28 11:54 集計）

固定URL: https://hdl.handle.net/11094/89427

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タイトル	Effect of Strain on Room-Temperature Spin Transport in Si₀.₁Ge₀.₉
著者	著者名 Naito, T.
	著者名 Yamada, M.
	著者名 Wagatsuma, Y.
	著者名 Sawano, K.
	NRID 1000090401281 1000090401281 ORCID 0000-0002-5473-6086 0000-0002-5473-6086 researchmap permalink read0102192 read0102192 Scopus Author ID 9244846800 9244846800 著者名 Hamaya, K.
内容	T. Naito, M. Yamada, Y. Wagatsuma, K. Sawano, and K. Hamaya, Effect of Strain on Room-Temperature Spin Transport in Si₀.₁Ge₀.₉, Phys. Rev. Applied, 18, 024005.
抄録	We report a strain effect on spin transport in semiconductors that exhibit Ge-like conduction bands at room temperature. Using four-terminal nonlocal spin-transport measurements in lateral spin-valve devices, we experimentally estimate the spin diffusion length (λ) of Ge and strained Si₀.₁Ge₀.₉ with two different carrier concentrations. Despite the Ge-like electronic band structure, the obtained λ of a strained Si₀.₁Ge₀.₉ is comparable to that of a Si channel. We discuss a possible mechanism of the strain-induced enhancement of λ at room temperature. As a consequence, we demonstrate the electrical detection of 5-μm lateral spin transport in the strained Si₀.₁Ge₀.₉ by applying an electric field at room temperature.
出版者	American Physical Society
収録物名	Physical Review Applied
巻(号)	18(2)
ページ	024005
刊行年月	2022-08-02
言語	英語
ハンドルURL	https://hdl.handle.net/11094/89427
eISSN	23317019
関連情報 (isIdenticalTo)	DOI (出版社版) https://doi.org/10.1103/PhysRevApplied.18.024005
アクセス権	open access
権利情報	Copyright 2022 by the American Physical Society
出版タイプ	Version of Record
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	Physical Review Applied. 2022, 18(2), p. 024005
DC.title	Effect of Strain on Room-Temperature Spin Transport in Si₀.₁Ge₀.₉
DC.creator	Naito, T.
	Yamada, M.
	Wagatsuma, Y.
	Sawano, K.
	Hamaya, K.
DC.publisher	American Physical Society
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2022-08-02
DC.identifier	https://doi.org/10.1103/PhysRevApplied.18.024005
DC.description	T. Naito, M. Yamada, Y. Wagatsuma, K. Sawano, and K. Hamaya, Effect of Strain on Room-Temperature Spin Transport in Si₀.₁Ge₀.₉, Phys. Rev. Applied, 18, 024005.
DCTERMS.abstract	We report a strain effect on spin transport in semiconductors that exhibit Ge-like conduction bands at room temperature. Using four-terminal nonlocal spin-transport measurements in lateral spin-valve devices, we experimentally estimate the spin diffusion length (λ) of Ge and strained Si₀.₁Ge₀.₉ with two different carrier concentrations. Despite the Ge-like electronic band structure, the obtained λ of a strained Si₀.₁Ge₀.₉ is comparable to that of a Si channel. We discuss a possible mechanism of the strain-induced enhancement of λ at room temperature. As a consequence, we demonstrate the electrical detection of 5-μm lateral spin transport in the strained Si₀.₁Ge₀.₉ by applying an electric field at room temperature.
DC.rights	Copyright 2022 by the American Physical Society
DC.format	89427
citation_title	Effect of Strain on Room-Temperature Spin Transport in Si₀.₁Ge₀.₉
citation_author	Naito, T.
	Yamada, M.
	Wagatsuma, Y.
	Sawano, K.
	Hamaya, K.
citation_publisher	American Physical Society
citation_language	英語
citation_date	2022-08-02
citation_journal_title	Physical Review Applied
citation_volume	18
citation_issue	2
citation_firstpage	024005
citation_doi	https://doi.org/10.1103/PhysRevApplied.18.024005
citation_public_url	https://hdl.handle.net/11094/89427

Effect of Strain on Room-Temperature Spin Transport in Si₀.₁Ge₀.₉

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